UT2804G-TN3-R-VB Product details
Product introduction:
**UT2804G-TN3-R-VB** is a single N-Channel MOSFET in a TO252 package with a maximum drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 55A. This MOSFET performs well in low-voltage, high-current applications, especially for applications requiring low on-resistance (RDS(ON)) and high efficiency. At VGS=10V, RDS(ON) is 12mΩ, providing a low-power, high-efficiency solution. Its threshold voltage (Vth) is 2.5V, allowing it to be turned on smoothly under low-voltage drive. Using Trench technology, UT2804G-TN3-R-VB provides excellent thermal performance and fast switching characteristics, making it ideal for use in high-efficiency power supplies, power converters, motor drives and other fields, and can operate stably under high current conditions to reduce power losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------|-------------------------------------|----------------------------------------------------|
| **Model** | UT2804G-TN3-R-VB | MOSFET model|
| **Package** | TO252 | TO252 package, suitable for high current and large current applications, small size|
| **Structure** | Single-N-Channel | Single N-type MOSFET structure|
| **VDS** | 40V | Maximum drain-source voltage|
| **VGS** | ±20V | Maximum gate-source voltage|
| **Vth** | 2.5V | Gate threshold voltage|
| **RDS(ON)** | 14mΩ@VGS=4.5V | On-resistance at VGS=4.5V|
| **RDS(ON)** | 12mΩ@VGS=10V | On-resistance at VGS=10V|
| **ID** | 55A | Maximum drain current|
| **Technology** | Trench | Trench technology provides lower on-resistance and excellent switching performance|
Domain and module applications:
**Power management and DC-DC converters: **
The low on-resistance of UT2804G-TN3-R-VB (especially 12mΩ at VGS=10V) makes it excellent in power management and DC-DC converters. This MOSFET can withstand high current (maximum 55A) and is very suitable for high-power conversion systems, which can reduce power losses and improve system efficiency. For example, in battery-powered devices or high-efficiency power adapters, UT2804G-TN3-R-VB can provide stable current output and efficient energy conversion.
**Motor drive system: **
This MOSFET is suitable for motor drive control, especially high-current motor drive systems such as power tools, electric vehicles and industrial robots. In these applications, UT2804G-TN3-R-VB can stably handle the high current load required by the motor, and effectively reduce switching losses through its low RDS(ON) characteristics, improving the response speed and efficiency of motor control.
**Battery Management System (BMS): **
In the battery management system, UT2804G-TN3-R-VB is very suitable for controlling the battery charging and discharging process. Its high current carrying capacity and low on-resistance characteristics enable it to efficiently control the charging and discharging currents and provide precise battery protection functions. In the charge and discharge management of lithium batteries and other high-power battery packs, it can ensure safe and efficient operation and extend the battery life.
**LED drive circuit: **
UT2804G-TN3-R-VB is also widely used in LED drive circuits, especially in high-brightness LED lighting systems that require high current and low power loss. It can provide stable current control for LEDs and reduce heat generation caused by switching losses, thereby improving the overall efficiency and life of the lighting system.
**Industrial Automation and Power Control: **
In industrial automation equipment and power control systems, UT2804G-TN3-R-VB can be used as a switching element for power conversion and motor control. Its high current capability and low on-resistance make it suitable for industrial-grade power systems, automation equipment, and power converters, where it can provide stable power output and efficient control.
**Automotive electronics:**
In automotive electronic systems, UT2804G-TN3-R-VB is suitable for electric vehicle drive systems, on-board battery management systems (BMS), and on-board power converters. It can withstand higher voltage and current loads to ensure efficient and stable operation of the power system, especially in battery charge and discharge management and motor control systems that require low power consumption and high efficiency.
These application scenarios require high-efficiency, low-loss, and high-current-carrying-capable MOSFETs. UT2804G-TN3-R-VB can provide excellent performance in these fields with its low RDS(ON), high ID, and Trench technology.
Technical support:
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