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UT20N03-VB Product details
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Product Introduction:
**UT20N03-VB** is a single N-Channel power MOSFET in TO252 package, suitable for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which can provide high-efficiency switching function in high current applications. Its on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V) at different gate drive voltages, with low conduction loss, thus optimizing power conversion efficiency. The maximum drain current (ID) of this device is 70A, which can meet the needs of higher current applications.
Using **Trench technology**, this MOSFET provides lower switching loss and higher efficiency, and is particularly suitable for high-frequency switching applications such as power management systems, battery drives, LED drives, etc. With its high current carrying capacity and low RDS(ON), UT20N03-VB performs well in medium and low voltage high current applications, which can improve the efficiency of the entire system and reduce power loss.
**UT20N03-VB** is a single N-Channel power MOSFET in TO252 package, suitable for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which can provide high-efficiency switching function in high current applications. Its on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V) at different gate drive voltages, with low conduction loss, thus optimizing power conversion efficiency. The maximum drain current (ID) of this device is 70A, which can meet the needs of higher current applications.
Using **Trench technology**, this MOSFET provides lower switching loss and higher efficiency, and is particularly suitable for high-frequency switching applications such as power management systems, battery drives, LED drives, etc. With its high current carrying capacity and low RDS(ON), UT20N03-VB performs well in medium and low voltage high current applications, which can improve the efficiency of the entire system and reduce power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type: ** TO252
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): **
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (drain current): ** 70A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 50W (specific power consumption depends on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Switching speed: ** Higher switching speed, suitable for high frequency applications
- **Maximum drain-source voltage:** 30V
- **Package type: ** TO252
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): **
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (drain current): ** 70A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 50W (specific power consumption depends on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Switching speed: ** Higher switching speed, suitable for high frequency applications
- **Maximum drain-source voltage:** 30V
Domain and module applications：
Application areas and module examples:
1. **Switching Power Supply (SMPS)**:
UT20N03-VB is used as a switching element in a high-efficiency switching power supply (SMPS). Its low on-resistance makes it suitable for use in power converters, reducing conduction losses at high frequencies, thereby improving the conversion efficiency of the power supply. This feature makes it particularly suitable for power modules that require high efficiency, such as DC-DC converters, point-to-point power supply, etc.
2. **Battery Management System (BMS)**:
This MOSFET has a wide range of applications in battery management systems, especially in lithium battery management and battery charge and discharge control. UT20N03-VB can effectively control the current flow during battery charging and discharging through its high current capability (70A) and maintain low conduction losses under the high current demand of the battery pack, thereby extending battery life and improving the efficiency of the overall system.
3. **LED drive circuit**:
In LED drive applications, UT20N03-VB can be used to drive high-power LEDs. Due to its low on-resistance and high maximum drain current, it can provide a stable current, thus ensuring the efficient operation and stability of the LED lighting system, and is particularly suitable for commercial lighting and high-power LED driver power supplies that require high efficiency and high power.
4. **Motor control**:
In the motor control module, UT20N03-VB acts as a current switching element, which can support high current flowing through the motor drive circuit. Its low on-resistance and high current capability make it perform well in motor drive, especially when used in high-power motors (such as industrial motors, power tools, etc.), which can effectively improve efficiency and reduce energy loss.
5. **Automotive power management**:
In automotive power management systems, UT20N03-VB can be used for battery voltage conversion, power distribution, and battery charge/discharge management. Since automotive power systems usually require stable high current transmission, the high current carrying capacity and low RDS(ON) of UT20N03-VB can ensure the stability and efficiency of the system, and is particularly suitable for the power management systems of electric vehicles and hybrid vehicles.
6. **Power Module**:
Among various power modules, UT20N03-VB is suitable for applications that require efficient power conversion, such as communication equipment, power distribution units, and industrial power systems. Its high efficiency, low on-resistance, and fast switching characteristics enable it to play an important role in power conversion, load regulation, and power management.
In summary, UT20N03-VB is a MOSFET with high current carrying capacity, low on-resistance, and efficient switching performance, suitable for various low-voltage and high-current power management, LED drive, motor control and other fields. It plays a key role in applications such as high-efficiency power supplies, industrial automation, and electric vehicles.
1. **Switching Power Supply (SMPS)**:
UT20N03-VB is used as a switching element in a high-efficiency switching power supply (SMPS). Its low on-resistance makes it suitable for use in power converters, reducing conduction losses at high frequencies, thereby improving the conversion efficiency of the power supply. This feature makes it particularly suitable for power modules that require high efficiency, such as DC-DC converters, point-to-point power supply, etc.
2. **Battery Management System (BMS)**:
This MOSFET has a wide range of applications in battery management systems, especially in lithium battery management and battery charge and discharge control. UT20N03-VB can effectively control the current flow during battery charging and discharging through its high current capability (70A) and maintain low conduction losses under the high current demand of the battery pack, thereby extending battery life and improving the efficiency of the overall system.
3. **LED drive circuit**:
In LED drive applications, UT20N03-VB can be used to drive high-power LEDs. Due to its low on-resistance and high maximum drain current, it can provide a stable current, thus ensuring the efficient operation and stability of the LED lighting system, and is particularly suitable for commercial lighting and high-power LED driver power supplies that require high efficiency and high power.
4. **Motor control**:
In the motor control module, UT20N03-VB acts as a current switching element, which can support high current flowing through the motor drive circuit. Its low on-resistance and high current capability make it perform well in motor drive, especially when used in high-power motors (such as industrial motors, power tools, etc.), which can effectively improve efficiency and reduce energy loss.
5. **Automotive power management**:
In automotive power management systems, UT20N03-VB can be used for battery voltage conversion, power distribution, and battery charge/discharge management. Since automotive power systems usually require stable high current transmission, the high current carrying capacity and low RDS(ON) of UT20N03-VB can ensure the stability and efficiency of the system, and is particularly suitable for the power management systems of electric vehicles and hybrid vehicles.
6. **Power Module**:
Among various power modules, UT20N03-VB is suitable for applications that require efficient power conversion, such as communication equipment, power distribution units, and industrial power systems. Its high efficiency, low on-resistance, and fast switching characteristics enable it to play an important role in power conversion, load regulation, and power management.
In summary, UT20N03-VB is a MOSFET with high current carrying capacity, low on-resistance, and efficient switching performance, suitable for various low-voltage and high-current power management, LED drive, motor control and other fields. It plays a key role in applications such as high-efficiency power supplies, industrial automation, and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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