Product introduction：
1. Product Introduction - UT150N04-VB
**UT150N04-VB** is a unipolar N-type power MOSFET in a **TO220** package, specially designed for high current and high efficiency power conversion applications. The device has a **40V** maximum drain-source voltage (VDS), suitable for low voltage, high current power switching applications. Its **gate-source voltage (VGS)** operating range is **±20V**, and has a **3V** **gate-source threshold voltage (Vth)**, which means that the MOSFET can start to conduct at a lower gate-source voltage. Its **RDS(ON)** is **15mΩ** at **VGS = 4.5V**, and is reduced to **2mΩ** at **VGS = 10V**, making it have extremely low conduction losses in high current applications. The maximum drain current (ID) of this MOSFET can reach **180A**, which is suitable for bearing high current loads and ensuring efficient current transmission. The **Trench** technology is adopted to effectively reduce the on-resistance and improve the switching speed and efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
| Parameter | Description |
| -------------- | ----------------------------- |
| **Model** | UT150N04-VB |
| **Package** | TO220 |
| **Configuration** | Unipolar N-type MOSFET |
| **VDS** | 40V |
| **VGS** | ±20V |
| **Vth** | 3V |
| **RDS(ON)** | 15mΩ @ VGS = 4.5V |
| | 2mΩ @ VGS = 10V |
| **ID** | 180A |
| **Technology** | Trench technology|
| **Maximum power** | About 350W (depending on application current and voltage) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS**: The maximum drain-source voltage of this device is **40V**, which is suitable for low-voltage and high-current applications.
- **VGS**: The maximum gate-source voltage is **±20V**, providing a wide gate control range and suitable for a variety of drive voltage environments.
- **Vth**: The gate-source threshold voltage is **3V**, which means that the MOSFET can start to conduct at a lower gate-source voltage.
- **RDS(ON)**: The on-resistance is as low as **2mΩ** at **VGS = 10V**, providing extremely low conduction losses and suitable for high-current applications.
- **ID**: The maximum drain current is **180A**, which can carry large currents and is suitable for high-current loads.
- **Technology**: The use of **Trench** technology optimizes switching speed and reduces on-resistance, thereby improving efficiency.
Domain and module applications：
3. Application fields and module examples
# **1. Efficient power conversion and battery management**
**UT150N04-VB**'s low on-resistance and high current carrying capacity make it an ideal choice for **switching power supplies (SMPS)** and **battery management systems (BMS)**. In **DC-DC converters**, it can effectively reduce losses in the power conversion process and improve energy efficiency. For example, in battery chargers, it can efficiently control the flow of current while maintaining low power loss and improving charging efficiency.
# **Summary**
**UT150N04-VB** is an efficient, low-power-loss **N-type power MOSFET** suitable for **power conversion, drive motors, solar inverters, power tools, electric vehicle power management and other fields**. It performs well in multiple high-efficiency applications through its low on-resistance and high current carrying capacity, ensuring efficient and stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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