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UT14N65F-VB Product details

Product introduction:

**UT14N65F-VB MOSFET Product Introduction**

UT14N65F-VB is a single N-type MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 12A. It adopts planar technology and is suitable for high voltage and medium power applications. The threshold voltage (Vth) of this model is 3.5V, and the on-resistance (RDS(ON)) is 680mΩ@VGS=10V, which is suitable for use in occasions requiring higher voltage tolerance and moderate conduction loss. UT14N65F-VB MOSFET has a wide gate-source voltage (VGS: ±30V) and can operate stably within a wide input voltage range. It is widely used in power conversion, inverters and high voltage circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
**UT14N65F-VB MOSFET detailed parameter description**

- **Package**: TO220F
- **Configuration**: Single-N-Channel (single N-type channel)
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 680mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Plannar (planar technology)

Domain and module applications:

**UT14N65F-VB MOSFET Applications and Module Examples**

1. **High-voltage Power Management**
- Due to the 650V VDS of UT14N65F-VB, it is suitable for high-voltage power management systems such as power converters and AC-DC power supplies. In these applications, the high withstand voltage characteristics and medium on-resistance of MOSFET can effectively improve the efficiency and stability of the system and ensure the reliable transmission of power.

2. **Solar Inverter**
- In solar inverters, UT14N65F-VB can be used in power conversion modules for DC to AC. Due to its high VDS, it can operate in a high voltage environment, provide reliable current switching performance, and ensure the high efficiency and long life of the inverter.

3. **Motor Drive and Control**
- In industrial automation and motor control systems, the high voltage carrying capacity and low on-resistance of UT14N65F-VB make it very suitable for motor drivers and controllers. It can provide stable switching operation under high power drive to ensure smooth operation of the motor.

4. **UPS (Uninterruptible Power Supply) System**
- In UPS systems, UT14N65F-VB can provide efficient power conversion and energy storage protection, especially at high voltage, its low conduction loss can effectively reduce energy loss and improve system efficiency. Used in key parts such as battery chargers and power transmission.

5. **Electric Vehicle (EV) Charging System**
- This MOSFET is also widely used in the charging system of electric vehicles, especially in the high-voltage fast charging process. UT14N65F-VB can handle high voltage and high current, ensuring fast and efficient battery charging while reducing heat loss.

6. **Switching Power Supply and Inverter Module**
- In high-frequency switching power supply and inverter modules, UT14N65F-VB can be used for high-power power conversion, power regulation and current control due to its planar technology and 650V withstand voltage, and is suitable for high-power power supply or high-frequency electronic equipment.

These applications demonstrate the high efficiency and high voltage resistance of the UT14N65F-VB MOSFET, enabling it to provide stable and reliable performance in multiple fields such as power conversion, electric vehicles, power management and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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