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UT108N03L-TM3-T-VB Product details
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Product Introduction:
**UT108N03L-TM3-T-VB** is a high-performance single N-Channel MOSFET in TO251 package. It has a rated drain-source voltage (VDS) of 30V and is suitable for low-voltage, high-current applications. The on-resistance (RDS(ON)) of this MOSFET shows excellent performance at different gate drive voltages, which is 4.5mΩ at VGS=4.5V and as low as 3.5mΩ at VGS=10V. Its maximum drain current (ID) reaches 100A, which is suitable for high-current applications. This device uses **Trench technology**, which can effectively reduce conduction losses and improve switching efficiency. It is particularly suitable for use in high-efficiency power management, load switching and other high-frequency circuits.
Due to its low RDS(ON) and high current capability, the UT108N03L-TM3-T-VB is widely used in fields that require low conduction losses and high current handling capabilities, which can improve the efficiency and reliability of the entire system.
**UT108N03L-TM3-T-VB** is a high-performance single N-Channel MOSFET in TO251 package. It has a rated drain-source voltage (VDS) of 30V and is suitable for low-voltage, high-current applications. The on-resistance (RDS(ON)) of this MOSFET shows excellent performance at different gate drive voltages, which is 4.5mΩ at VGS=4.5V and as low as 3.5mΩ at VGS=10V. Its maximum drain current (ID) reaches 100A, which is suitable for high-current applications. This device uses **Trench technology**, which can effectively reduce conduction losses and improve switching efficiency. It is particularly suitable for use in high-efficiency power management, load switching and other high-frequency circuits.
Due to its low RDS(ON) and high current capability, the UT108N03L-TM3-T-VB is widely used in fields that require low conduction losses and high current handling capabilities, which can improve the efficiency and reliability of the entire system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
- **Package type: ** TO251
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): **
- 4.5mΩ @ VGS = 4.5V
- 3.5mΩ @ VGS = 10V
- **ID (drain current): ** 100A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 50W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Switching speed: ** Fast switching characteristics, suitable for high frequency applications
- **Maximum drain-source voltage:** 30V
- **Package type: ** TO251
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): **
- 4.5mΩ @ VGS = 4.5V
- 3.5mΩ @ VGS = 10V
- **ID (drain current): ** 100A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 50W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Switching speed: ** Fast switching characteristics, suitable for high frequency applications
- **Maximum drain-source voltage:** 30V
Domain and module applications：
Application areas and module examples:
1. **High-efficiency switching power supply (SMPS)**:
Due to its low on-resistance (RDS(ON)) and high drain current capability, the UT108N03L-TM3-T-VB is an ideal switching element in switching power supplies. It can switch quickly at high frequencies, reducing conduction losses and thus improving power conversion efficiency. This makes it very useful in, for example, DC-DC converters, especially for applications with large load current requirements.
2. **Motor drive**:
In motor control modules, the UT108N03L-TM3-T-VB can be used in high-current drive circuits. Its 100A maximum drain current can well meet the current requirements of motor starting and running. Especially in high-power motor control applications, such as industrial automation systems, power tools or electric vehicle drives, it can provide stable power conversion.
3. **Battery management system (BMS)**:
In battery management systems, MOSFETs are used for current control during battery charging and discharging. Because UT108N03L-TM3-T-VB has a low on-resistance, it can effectively reduce the heat generated during charging and discharging, extend battery life and improve efficiency. It has a wide range of application prospects in high-power demand battery packs, such as charge/discharge control in electric vehicles or large-capacity energy storage systems.
4. **LED drive circuit**:
In LED drive applications, UT108N03L-TM3-T-VB can be used for current control switching. LED drive circuits require an efficient power switch to provide a stable current, especially in high-current, high-power LED lighting systems. The low on-resistance of this MOSFET ensures lower power loss, thereby improving the overall efficiency of the system.
5. **Power inverter and uninterruptible power supply (UPS)**:
In power conversion applications such as inverters and UPS, UT108N03L-TM3-T-VB provides efficient switching operation through its high current capability and low RDS(ON). In high-current AC-DC conversion and DC-AC conversion, this MOSFET can significantly improve the efficiency of power conversion, especially in commercial and industrial applications that require efficient power transmission.
6. **Load switch application**:
This MOSFET can be used as a load switch and plays an important role in applications such as communication equipment, power management, and other high-current control situations. Due to its good switching characteristics and high current carrying capacity, it can ensure stable control of load current and avoid overload damage.
In summary, UT108N03L-TM3-T-VB is a MOSFET suitable for various high-efficiency, high-current, low-voltage switching applications. It is widely used in power supplies, motor drives, inverters, LED drives, and other fields, especially for scenarios requiring fast switching and high efficiency.
1. **High-efficiency switching power supply (SMPS)**:
Due to its low on-resistance (RDS(ON)) and high drain current capability, the UT108N03L-TM3-T-VB is an ideal switching element in switching power supplies. It can switch quickly at high frequencies, reducing conduction losses and thus improving power conversion efficiency. This makes it very useful in, for example, DC-DC converters, especially for applications with large load current requirements.
2. **Motor drive**:
In motor control modules, the UT108N03L-TM3-T-VB can be used in high-current drive circuits. Its 100A maximum drain current can well meet the current requirements of motor starting and running. Especially in high-power motor control applications, such as industrial automation systems, power tools or electric vehicle drives, it can provide stable power conversion.
3. **Battery management system (BMS)**:
In battery management systems, MOSFETs are used for current control during battery charging and discharging. Because UT108N03L-TM3-T-VB has a low on-resistance, it can effectively reduce the heat generated during charging and discharging, extend battery life and improve efficiency. It has a wide range of application prospects in high-power demand battery packs, such as charge/discharge control in electric vehicles or large-capacity energy storage systems.
4. **LED drive circuit**:
In LED drive applications, UT108N03L-TM3-T-VB can be used for current control switching. LED drive circuits require an efficient power switch to provide a stable current, especially in high-current, high-power LED lighting systems. The low on-resistance of this MOSFET ensures lower power loss, thereby improving the overall efficiency of the system.
5. **Power inverter and uninterruptible power supply (UPS)**:
In power conversion applications such as inverters and UPS, UT108N03L-TM3-T-VB provides efficient switching operation through its high current capability and low RDS(ON). In high-current AC-DC conversion and DC-AC conversion, this MOSFET can significantly improve the efficiency of power conversion, especially in commercial and industrial applications that require efficient power transmission.
6. **Load switch application**:
This MOSFET can be used as a load switch and plays an important role in applications such as communication equipment, power management, and other high-current control situations. Due to its good switching characteristics and high current carrying capacity, it can ensure stable control of load current and avoid overload damage.
In summary, UT108N03L-TM3-T-VB is a MOSFET suitable for various high-efficiency, high-current, low-voltage switching applications. It is widely used in power supplies, motor drives, inverters, LED drives, and other fields, especially for scenarios requiring fast switching and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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