UT09N65F-VB Product details
Product introduction:
**UT09N65F-VB** is a high-voltage **single N-channel MOSFET** in a **TO220F package**, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is **650V**, which is suitable for industrial power supplies, high-voltage switching circuits and various power conversion applications. It uses **Plannar technology** and has a relatively high on-resistance (RDS(ON)), but its structure has good stability under high voltage and high current conditions and can meet the needs of harsh working environments. The device has a maximum drain current of **10A** and is suitable for switching, conversion and control functions in high-power power systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: UT09N65F-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ@VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to 150°C (typical)
Domain and module applications:
1. **High-voltage power supply system**
- The maximum drain-source voltage of UT09N65F-VB is **650V**, which is very suitable for high-voltage power supply systems such as industrial power supplies, solar inverters, etc. In these applications, MOSFET is responsible for converting high-voltage input to the required low-voltage output to support stable energy transmission.
2. **Power converter**
- In the field of power conversion, especially **DC-DC converter** and **AC-DC converter**, UT09N65F-VB can work stably under high voltage conditions. Its higher voltage tolerance and larger drain current carrying capacity make it an ideal choice in high-power converters. Whether in the power transmission system or the power supply part of power tools, home appliances, etc., efficient power conversion can be achieved.
3. **Industrial switching circuits**
- Due to its higher **VDS** and **ID**, UT09N65F-VB is suitable for **industrial switching circuits**, especially in environments that need to withstand high voltage and high current. For example, in **motor drive systems** and **switching power management**, it can effectively control the flow of current and optimize system efficiency.
4. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
- UT09N65F-VB can also be widely used in battery management systems (BMS) and motor drive circuits of electric vehicles and hybrid electric vehicles. Due to its **high voltage carrying capacity**, this MOSFET can effectively manage the battery charging and discharging process and provide stable power output. Especially in high-speed charging and power driving, it can ensure efficient and safe operation of the system.
5. **Power Factor Correction (PFC)**
- In power factor correction circuits, UT09N65F-VB can be effectively used in high voltage switching mode to help improve the efficiency and stability of the power system. Due to its excellent high voltage characteristics and high current capabilities, it is suitable for power factor correction applications that require high efficiency and low energy consumption.
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