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UT04N60F-VB Product details
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1. Product Introduction - UT04N60F-VB
**UT04N60F-VB** is a unipolar N-type power MOSFET in a **TO220F** package. The device has a high **drain-source voltage (VDS)** of **650V**, making it suitable for high voltage applications. Its **gate-source voltage (VGS)** operating range is **±30V**, it has a **gate-source threshold voltage (Vth)** of **3.5V**, and has a large **drain current (ID)** peak value of up to **4A**. In addition, its **RDS(ON)** (on-resistance) is **2560mΩ**, which makes it have relatively high conduction losses. This MOSFET is manufactured based on **Planar** technology and is suitable for medium and high voltage power switching and drive applications.
**UT04N60F-VB** is a unipolar N-type power MOSFET in a **TO220F** package. The device has a high **drain-source voltage (VDS)** of **650V**, making it suitable for high voltage applications. Its **gate-source voltage (VGS)** operating range is **±30V**, it has a **gate-source threshold voltage (Vth)** of **3.5V**, and has a large **drain current (ID)** peak value of up to **4A**. In addition, its **RDS(ON)** (on-resistance) is **2560mΩ**, which makes it have relatively high conduction losses. This MOSFET is manufactured based on **Planar** technology and is suitable for medium and high voltage power switching and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
| Parameter | Description|
| -------------- | ----------------------------- |
| **Model** | UT04N60F-VB |
| **Package** | TO220F |
| **Configuration** | Unipolar N-type MOSFET |
| **VDS** | 650V |
| **VGS** | ±30V |
| **Vth** | 3.5V |
| **RDS(ON)** | 2560mΩ @ VGS = 10V |
| **ID** | 4A |
| **Technology** | Planar technology|
| **Maximum power** | Determined by application based on on-resistance and current|
| **Operating temperature range** | -55°C to +150°C |
- **VDS**: This value indicates that the maximum drain-source voltage that this MOSFET can withstand is **650V**, which is very suitable for high-voltage environments.
- **VGS**: The maximum gate-source voltage is **±30V**, which ensures the control flexibility and compatibility of the MOSFET.
- **Vth**: The gate-source threshold voltage is **3.5V**, which means that when the gate-source voltage reaches or exceeds this value, the MOSFET starts to turn on.
- **RDS(ON)**: The on-resistance is **2560mΩ**. This high value will cause certain power loss and is suitable for use in applications with high power loss tolerance.
- **ID**: The maximum drain current is **4A**, which is suitable for medium power current requirements.
| Parameter | Description|
| -------------- | ----------------------------- |
| **Model** | UT04N60F-VB |
| **Package** | TO220F |
| **Configuration** | Unipolar N-type MOSFET |
| **VDS** | 650V |
| **VGS** | ±30V |
| **Vth** | 3.5V |
| **RDS(ON)** | 2560mΩ @ VGS = 10V |
| **ID** | 4A |
| **Technology** | Planar technology|
| **Maximum power** | Determined by application based on on-resistance and current|
| **Operating temperature range** | -55°C to +150°C |
- **VDS**: This value indicates that the maximum drain-source voltage that this MOSFET can withstand is **650V**, which is very suitable for high-voltage environments.
- **VGS**: The maximum gate-source voltage is **±30V**, which ensures the control flexibility and compatibility of the MOSFET.
- **Vth**: The gate-source threshold voltage is **3.5V**, which means that when the gate-source voltage reaches or exceeds this value, the MOSFET starts to turn on.
- **RDS(ON)**: The on-resistance is **2560mΩ**. This high value will cause certain power loss and is suitable for use in applications with high power loss tolerance.
- **ID**: The maximum drain current is **4A**, which is suitable for medium power current requirements.
Domain and module applications：
3. Application fields and module examples
# **1. Power management and switching power supply**
**UT04N60F-VB**'s high **VDS** and moderate **RDS(ON)** make it very suitable for **power management systems**, especially **switching power supplies (SMPS)**. In high-voltage power conversion, it can be used as a main switch, especially in situations where high voltage tolerance and medium current demand are required. For example, in AC-DC power modules, it can efficiently switch and control the flow of power.
# **Summary**
**UT04N60F-VB** is a power MOSFET with high withstand voltage, suitable for areas that require high voltage control, such as power conversion, inverters, charging systems, and high-power applications such as power tool drives. By using this MOSFET, the stability and performance of the system under high voltage can be ensured.
# **1. Power management and switching power supply**
**UT04N60F-VB**'s high **VDS** and moderate **RDS(ON)** make it very suitable for **power management systems**, especially **switching power supplies (SMPS)**. In high-voltage power conversion, it can be used as a main switch, especially in situations where high voltage tolerance and medium current demand are required. For example, in AC-DC power modules, it can efficiently switch and control the flow of power.
# **Summary**
**UT04N60F-VB** is a power MOSFET with high withstand voltage, suitable for areas that require high voltage control, such as power conversion, inverters, charging systems, and high-power applications such as power tool drives. By using this MOSFET, the stability and performance of the system under high voltage can be ensured.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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