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UT02N65F-VB Product details
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1. Product Introduction
**UT02N65F-VB** is a **unipolar N-channel** power MOSFET in **TO220F** package. The device has high voltage withstand capability, **VDS maximum is 650V**, and is suitable for application scenarios that require high voltage withstand. Its gate-source voltage (VGS) range is ±30V, which is suitable for a variety of drive voltages. **Vth (threshold voltage) is 3.5V**, which ensures good switching performance and low conduction loss. The **RDS(ON)** of the device is 1700mΩ@VGS=10V, showing a low on-resistance, and can operate under higher current loads, with a maximum current carrying capacity of **2A**. The device adopts **Planar technology**, has good stability and high efficiency, and is suitable for a variety of power electronics applications.
**UT02N65F-VB** is a **unipolar N-channel** power MOSFET in **TO220F** package. The device has high voltage withstand capability, **VDS maximum is 650V**, and is suitable for application scenarios that require high voltage withstand. Its gate-source voltage (VGS) range is ±30V, which is suitable for a variety of drive voltages. **Vth (threshold voltage) is 3.5V**, which ensures good switching performance and low conduction loss. The **RDS(ON)** of the device is 1700mΩ@VGS=10V, showing a low on-resistance, and can operate under higher current loads, with a maximum current carrying capacity of **2A**. The device adopts **Planar technology**, has good stability and high efficiency, and is suitable for a variety of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology
- **Maximum power loss**: Calculated according to specific working conditions
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Lower thermal resistance design, which is conducive to heat dissipation.
- **Input charge (Qg)**: Lower input charge, suitable for high-frequency applications.
- **Radiation resistance**: Suitable for applications in harsh environments.
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology
- **Maximum power loss**: Calculated according to specific working conditions
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Lower thermal resistance design, which is conducive to heat dissipation.
- **Input charge (Qg)**: Lower input charge, suitable for high-frequency applications.
- **Radiation resistance**: Suitable for applications in harsh environments.
Domain and module applications：
3. Application fields and modules
# 1. **Power management system**
UT02N65F-VB is widely used in high-voltage power management circuits, such as power adapters, UPS (uninterruptible power supply system) and switching power supplies. Due to its high withstand voltage (650V) and low on-resistance (RDS(ON) 1700mΩ), this MOSFET can operate stably under high voltage and high current working conditions, suitable for high power output and efficient power conversion.
# 6. **High frequency applications and switching power supply circuits**
Due to its low input charge (Qg) and good switching performance, UT02N65F-VB is suitable for circuits with high frequency operation, such as RF power amplifiers and high-frequency switching power supplies. It can provide stable switching characteristics and reduce switching losses, thereby improving efficiency in high-frequency environments.
In short, UT02N65F-VB is widely used in multiple fields and modules due to its high withstand voltage, low on-resistance, moderate current capability and efficient switching performance.
# 1. **Power management system**
UT02N65F-VB is widely used in high-voltage power management circuits, such as power adapters, UPS (uninterruptible power supply system) and switching power supplies. Due to its high withstand voltage (650V) and low on-resistance (RDS(ON) 1700mΩ), this MOSFET can operate stably under high voltage and high current working conditions, suitable for high power output and efficient power conversion.
# 6. **High frequency applications and switching power supply circuits**
Due to its low input charge (Qg) and good switching performance, UT02N65F-VB is suitable for circuits with high frequency operation, such as RF power amplifiers and high-frequency switching power supplies. It can provide stable switching characteristics and reduce switching losses, thereby improving efficiency in high-frequency environments.
In short, UT02N65F-VB is widely used in multiple fields and modules due to its high withstand voltage, low on-resistance, moderate current capability and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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