Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
110mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SC70-6
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 2.5V
- 86mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 2.6A
- **Technology type**: Trench technology
Domain and module applications:
Applications and module examples
**1. Switching Power Supplies**
The low on-resistance of the US6K2-VB MOSFET makes it very suitable for use in switching power supply modules. In switching power supplies, MOSFETs are used as switching elements, and fast switching can reduce energy loss and improve efficiency. Low RDS(ON) helps reduce conduction losses and improve the overall efficiency of the system.
**2. Battery Management Systems (BMS)**
In battery management systems, the US6K2-VB MOSFET can be used for battery charge and discharge control. Due to its low on-resistance, it helps reduce power losses during battery charge and discharge, extending the battery life.
**3. Power Management in Portable Devices**
This MOSFET is suitable for power management modules for portable devices such as smartphones and tablets. In these devices, efficient power conversion and battery protection are required. US6K2-VB can optimize power management circuits and extend battery life through its low RDS(ON) and efficient switching performance.
**4. Driver Circuits**
In low-power drive applications, US6K2-VB MOSFET can also be used in driver circuits, such as LED driver circuits, motor driver circuits, etc. Its high efficiency and stability can ensure precise control of drive current and reduce system heating.
**5. High-Frequency Switching Circuits**
Due to its use of Trench technology, US6K2-VB has very superior switching characteristics and is suitable for high-frequency switching circuits, such as RF power amplifiers and wireless communication modules, to ensure high-speed switching stability and low power consumption.
Through these applications, US6K2-VB MOSFET can meet the high-efficiency requirements in different power management and switch control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours