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UPA1970TE-VB Product details
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1. **Product Introduction: **
UPA1970TE-VB is a high-performance dual N-channel MOSFET in SOT23-6 package. This product is designed for low-voltage power management and power control applications, with good switching performance and low conduction loss. Its maximum drain-source voltage (VDS) is 20V, which is suitable for switching applications in low-voltage systems, such as load control, battery management, and power conversion. UPA1970TE-VB is equipped with two N-channel MOSFETs, which can realize bidirectional switch control in the same package, meeting the design requirements with high space and function requirements. The turn-on threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, enabling it to turn on at low voltage, and has a low on-resistance (RDS(ON)) of 28mΩ and 22mΩ at gate voltages of 2.5V and 4.5V, respectively, providing efficient current conduction. The maximum drain current (ID) is 6A, which is suitable for a variety of low-power applications. The use of Trench technology enables the UPA1970TE-VB to excel in high-frequency switching and high-efficiency applications.
UPA1970TE-VB is a high-performance dual N-channel MOSFET in SOT23-6 package. This product is designed for low-voltage power management and power control applications, with good switching performance and low conduction loss. Its maximum drain-source voltage (VDS) is 20V, which is suitable for switching applications in low-voltage systems, such as load control, battery management, and power conversion. UPA1970TE-VB is equipped with two N-channel MOSFETs, which can realize bidirectional switch control in the same package, meeting the design requirements with high space and function requirements. The turn-on threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, enabling it to turn on at low voltage, and has a low on-resistance (RDS(ON)) of 28mΩ and 22mΩ at gate voltages of 2.5V and 4.5V, respectively, providing efficient current conduction. The maximum drain current (ID) is 6A, which is suitable for a variety of low-power applications. The use of Trench technology enables the UPA1970TE-VB to excel in high-frequency switching and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. **Detailed parameter description:**
- **Package type**: SOT23-6
- **Configuration**: Dual-N+N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Turn-on threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 6A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT23-6
- **Application areas**: battery management, power management, load switch, LED drive, reverse current protection, etc.
- **Package type**: SOT23-6
- **Configuration**: Dual-N+N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Turn-on threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 6A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT23-6
- **Application areas**: battery management, power management, load switch, LED drive, reverse current protection, etc.
Domain and module applications：
3. **Application fields and module examples:**
- **Battery Management System (BMS)**: UPA1970TE-VB is widely used in battery management systems, especially in battery management of power tools, electric vehicles and portable devices. Its dual N-channel design enables it to control multiple loads simultaneously, providing efficient power switching and protection functions. Its low on-resistance (RDS(ON) = 22mΩ@VGS=4.5V) effectively reduces power loss, prolongs battery life, and improves the overall efficiency of the system. In addition, its high leakage current carrying capacity (maximum leakage current of 6A) enables it to cope with high current requirements during battery charging and discharging.
- **Power Management and Load Switch**: In low-voltage power management systems, UPA1970TE-VB can be used for load switch control as an efficient power switch. It can achieve efficient current regulation in multiple power lines, especially suitable for portable consumer electronics, embedded systems and sensor devices. This MOSFET maintains a low on-resistance at low gate voltages (such as 2.5V or 4.5V), thereby ensuring efficient current conduction and low power loss, making it suitable for power management and energy-saving designs.
- **LED driver power supply**: The UPA1970TE-VB is suitable for LED driver power supplies, especially in low-power LED lighting systems that require multiple channels. Through its dual N-channel design, the MOSFET can effectively control multiple LED drive channels, improve the efficiency of the overall power supply, and reduce power loss. During current conduction, the low on-resistance (RDS(ON) = 22mΩ) further reduces the system's thermal loss, ensuring that the LED system remains efficient and stable during long-term operation.
- **Reverse current protection**: Because the UP1970TE-VB uses a dual N-channel structure, it is very suitable for battery-powered systems that require reverse current protection. This MOSFET can be used as a reverse current blocking switch in a battery charging circuit to prevent current from flowing reversely into the battery or load, preventing equipment damage caused by reverse current. This feature has been widely used in portable devices, automotive electronics, wireless sensors, and energy storage devices.
- **Power conversion and current regulation**: In DC-DC converter and current regulation applications, UPA1970TE-VB can effectively improve conversion efficiency and current regulation accuracy. Its low RDS(ON) characteristics enable it to have extremely low switching losses during operation, making it suitable for various low-power power modules and charger designs. Its low switching losses and high frequency response capabilities enable it to perform well in power conversion and regulation applications.
In summary, UPA1970TE-VB is suitable for multiple fields such as battery management, power management, LED drive, load switch, reverse current protection, etc. with its low on-resistance, good switching performance, and high current carrying capacity. Its dual N-channel design makes it particularly suitable for applications that require high-efficiency, multi-channel control, and is widely used in low-voltage power systems and high-efficiency electronic devices.
- **Battery Management System (BMS)**: UPA1970TE-VB is widely used in battery management systems, especially in battery management of power tools, electric vehicles and portable devices. Its dual N-channel design enables it to control multiple loads simultaneously, providing efficient power switching and protection functions. Its low on-resistance (RDS(ON) = 22mΩ@VGS=4.5V) effectively reduces power loss, prolongs battery life, and improves the overall efficiency of the system. In addition, its high leakage current carrying capacity (maximum leakage current of 6A) enables it to cope with high current requirements during battery charging and discharging.
- **Power Management and Load Switch**: In low-voltage power management systems, UPA1970TE-VB can be used for load switch control as an efficient power switch. It can achieve efficient current regulation in multiple power lines, especially suitable for portable consumer electronics, embedded systems and sensor devices. This MOSFET maintains a low on-resistance at low gate voltages (such as 2.5V or 4.5V), thereby ensuring efficient current conduction and low power loss, making it suitable for power management and energy-saving designs.
- **LED driver power supply**: The UPA1970TE-VB is suitable for LED driver power supplies, especially in low-power LED lighting systems that require multiple channels. Through its dual N-channel design, the MOSFET can effectively control multiple LED drive channels, improve the efficiency of the overall power supply, and reduce power loss. During current conduction, the low on-resistance (RDS(ON) = 22mΩ) further reduces the system's thermal loss, ensuring that the LED system remains efficient and stable during long-term operation.
- **Reverse current protection**: Because the UP1970TE-VB uses a dual N-channel structure, it is very suitable for battery-powered systems that require reverse current protection. This MOSFET can be used as a reverse current blocking switch in a battery charging circuit to prevent current from flowing reversely into the battery or load, preventing equipment damage caused by reverse current. This feature has been widely used in portable devices, automotive electronics, wireless sensors, and energy storage devices.
- **Power conversion and current regulation**: In DC-DC converter and current regulation applications, UPA1970TE-VB can effectively improve conversion efficiency and current regulation accuracy. Its low RDS(ON) characteristics enable it to have extremely low switching losses during operation, making it suitable for various low-power power modules and charger designs. Its low switching losses and high frequency response capabilities enable it to perform well in power conversion and regulation applications.
In summary, UPA1970TE-VB is suitable for multiple fields such as battery management, power management, LED drive, load switch, reverse current protection, etc. with its low on-resistance, good switching performance, and high current carrying capacity. Its dual N-channel design makes it particularly suitable for applications that require high-efficiency, multi-channel control, and is widely used in low-voltage power systems and high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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