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UPA1952TE-VB Product details
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**UPA1952TE-VB Product Introduction**
UPA1952TE-VB is a **dual P-Channel MOSFET** in a **SOT23-6** package. It has two P-Channel MOSFETs and is suitable for high-efficiency, low-voltage power management and switching applications. Its **drain-source voltage (VDS)** is **-20V**, which is suitable for medium and low voltage power control and switching circuits. This MOSFET uses **Trench technology**, has low **on-resistance (RDS(ON))** and high current handling capability, and can operate efficiently at lower gate voltages. The **gate threshold voltage (Vth)** of UPA1952TE-VB is **-0.6V**, which enables it to start at very low gate voltages, making it particularly suitable for **power management** and **load switching** applications.
UPA1952TE-VB is a **dual P-Channel MOSFET** in a **SOT23-6** package. It has two P-Channel MOSFETs and is suitable for high-efficiency, low-voltage power management and switching applications. Its **drain-source voltage (VDS)** is **-20V**, which is suitable for medium and low voltage power control and switching circuits. This MOSFET uses **Trench technology**, has low **on-resistance (RDS(ON))** and high current handling capability, and can operate efficiently at lower gate voltages. The **gate threshold voltage (Vth)** of UPA1952TE-VB is **-0.6V**, which enables it to start at very low gate voltages, making it particularly suitable for **power management** and **load switching** applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
**Detailed parameter description**
- **Model**: UPA1952TE-VB
- **Package**: SOT23-6
- **Configuration**: Dual P-Channel MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- **VGS = 2.5V**: 100mΩ
- **VGS = 4.5V**: 75mΩ
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package form**: SOT23-6
- **Model**: UPA1952TE-VB
- **Package**: SOT23-6
- **Configuration**: Dual P-Channel MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- **VGS = 2.5V**: 100mΩ
- **VGS = 4.5V**: 75mΩ
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package form**: SOT23-6
Domain and module applications：
**Application Fields and Module Examples**
The low **RDS(ON)** and dual MOSFET configuration of UPA1952TE-VB make it suitable for multiple high-efficiency power management and switch control applications. The following are typical application fields and module examples of this product:
1. **Battery Power System and Battery Management System** (BMS):
- UPA1952TE-VB is suitable for load control and battery switching applications in **Battery Management System (BMS)**. Due to its low **RDS(ON)** and **P-Channel** configuration, it can accurately control the flow of current and reduce power loss, especially in **DC-DC converter**, through efficient switching operation, to ensure the stability of battery power supply and battery life.
2. **Load Switch**:
- UPA1952TE-VB can be used as a **load switch** to achieve efficient switching control at low voltage due to its dual **P-Channel** configuration. It can be used for **load connection and disconnection** in smart devices, power strips and portable devices, where the low **RDS(ON)** of the MOSFET can effectively reduce heat generation and improve system efficiency.
3. **Power Management and Power Regulation**:
- This MOSFET is suitable for **power management modules**, especially in **low-voltage power regulation circuits**. Due to its excellent conduction performance and low power consumption characteristics, the UPA1952TE-VB can reduce power loss and improve power conversion efficiency, and is widely used in various **power converters, switching power supplies** and **regulated power supplies**.
4. **Portable Devices**:
- In **portable devices** (such as smartphones, wearable devices, etc.), the UPA1952TE-VB can be used for **power switching** and **battery management**. Its low **RDS(ON)** and high current carrying capacity make it very suitable for applications requiring long standby time or efficient power management, reducing heat generation during operation, thereby extending the battery life.
5. **Load drive and LED driver power supply**:
- UPA1952TE-VB can be used for switch control in **LED driver power supply**. Especially in **low voltage and medium power** LED systems, UPA1952TE-VB can effectively provide stable current control, optimize power loss, and ensure long-term stable operation of LED lamps.
6. **Automotive electronics and vehicle power system**:
- In **automotive electronics** applications, UPA1952TE-VB can be used as a current control component in **battery switch, load management** and **vehicle power system**. Its efficient switching characteristics and low power consumption make it suitable for **automotive battery management system (BMS)** to ensure the reliability and stability of the power system.
7. **Wireless transmission and RF applications**:
- This type of MOSFET is also suitable for some **wireless transmission power modules**, especially in **RF amplifiers** or **communication equipment**. As a **switch control** element, it can efficiently adjust the power signal, reduce energy loss, and improve the transmission efficiency of the system.
The low **RDS(ON)** and dual MOSFET configuration of UPA1952TE-VB make it suitable for multiple high-efficiency power management and switch control applications. The following are typical application fields and module examples of this product:
1. **Battery Power System and Battery Management System** (BMS):
- UPA1952TE-VB is suitable for load control and battery switching applications in **Battery Management System (BMS)**. Due to its low **RDS(ON)** and **P-Channel** configuration, it can accurately control the flow of current and reduce power loss, especially in **DC-DC converter**, through efficient switching operation, to ensure the stability of battery power supply and battery life.
2. **Load Switch**:
- UPA1952TE-VB can be used as a **load switch** to achieve efficient switching control at low voltage due to its dual **P-Channel** configuration. It can be used for **load connection and disconnection** in smart devices, power strips and portable devices, where the low **RDS(ON)** of the MOSFET can effectively reduce heat generation and improve system efficiency.
3. **Power Management and Power Regulation**:
- This MOSFET is suitable for **power management modules**, especially in **low-voltage power regulation circuits**. Due to its excellent conduction performance and low power consumption characteristics, the UPA1952TE-VB can reduce power loss and improve power conversion efficiency, and is widely used in various **power converters, switching power supplies** and **regulated power supplies**.
4. **Portable Devices**:
- In **portable devices** (such as smartphones, wearable devices, etc.), the UPA1952TE-VB can be used for **power switching** and **battery management**. Its low **RDS(ON)** and high current carrying capacity make it very suitable for applications requiring long standby time or efficient power management, reducing heat generation during operation, thereby extending the battery life.
5. **Load drive and LED driver power supply**:
- UPA1952TE-VB can be used for switch control in **LED driver power supply**. Especially in **low voltage and medium power** LED systems, UPA1952TE-VB can effectively provide stable current control, optimize power loss, and ensure long-term stable operation of LED lamps.
6. **Automotive electronics and vehicle power system**:
- In **automotive electronics** applications, UPA1952TE-VB can be used as a current control component in **battery switch, load management** and **vehicle power system**. Its efficient switching characteristics and low power consumption make it suitable for **automotive battery management system (BMS)** to ensure the reliability and stability of the power system.
7. **Wireless transmission and RF applications**:
- This type of MOSFET is also suitable for some **wireless transmission power modules**, especially in **RF amplifiers** or **communication equipment**. As a **switch control** element, it can efficiently adjust the power signal, reduce energy loss, and improve the transmission efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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