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UPA1951TE-VB Product details

Product introduction:

UPA1951TE-VB MOSFET - Product Introduction

UPA1951TE-VB is a high-efficiency dual P-channel MOSFET in SOT23-6 package, designed for low-voltage power management systems. Its withstand voltage (VDS) is -20V and gate voltage (VGS) is ±12V, suitable for negative voltage power supply and current control applications. UPA1951TE-VB adopts Trench technology and has a low on-resistance (RDS(ON)), which is 100mΩ at VGS=2.5V and 75mΩ at VGS=4.5V, thereby greatly reducing conduction losses. The maximum leakage current (ID) of this MOSFET is -4A, and it can be used in various negative voltage power conversion, switching power supplies and synchronous rectification circuits, especially for applications requiring high efficiency and low loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-P+P
UPA1951TE-VB MOSFET - Detailed parameter description

- **Model**: UPA1951TE-VB
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Withstand voltage (VDS)**: -20V
- **Gate voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ (at VGS=2.5V)
- 75mΩ (at VGS=4.5V)
- **Maximum leakage current (ID)**: -4A
- **Technology type**: Trench technology
- **Maximum operating temperature**: +150°C
- **Reverse recovery characteristics**: Suitable for high-speed switching operation
- **Conduction loss**: Low loss, suitable for high-efficiency systems

Domain and module applications:

Application fields and module examples: 1. **Negative voltage power supply system**: UPA1951TE-VB is suitable for power supply systems that require negative voltage. With a withstand voltage of -20V, it can work stably in a negative power supply environment and is particularly suitable for switching and voltage regulation applications of negative voltage power supplies. It can be used as a switching element in high-efficiency power conversion circuits, especially in communication equipment, instrumentation and portable devices, which can effectively improve power conversion efficiency and reduce losses and heat generation. 2. **Synchronous rectification (SR) application**: The low on-resistance and high efficiency of this MOSFET make it very suitable for use as a switching element in synchronous rectification circuits. Synchronous rectification can significantly improve the efficiency of switching power supplies and play a key role in reducing losses and increasing power density. UPA1951TE-VB is suitable for use in various types of switching power supplies, inverters and power adapters, and can effectively reduce power losses, especially in high-frequency switching applications.

3. **Battery Management System (BMS)**:
Due to its low on-resistance and high current carrying capacity, UPA1951TE-VB plays an important role in battery management system (BMS), especially for battery charge and discharge management and current switching. Its high efficiency characteristics can effectively improve the battery charging efficiency and extend the battery life. It is widely used in portable battery-driven devices, power tools, electric bicycles, etc. to ensure the stable operation of battery management system.

4. **DC-DC Converter**:
UPA1951TE-VB is very suitable for use in DC-DC converters due to its low on-resistance and fast switching characteristics. It is able to handle higher currents and reduce conversion losses, especially in applications with low voltage and high efficiency requirements, such as low-voltage power adapters and fast chargers. This MOSFET helps to improve the energy efficiency of the power supply and reduce energy waste.

5. **Negative Voltage Inverters and Power Amplifiers**:
In high-efficiency power conversion circuits such as inverters and power amplifiers, the low on-resistance of the UPA1951TE-VB enables it to effectively reduce energy loss and maintain stable current output during high-frequency switching. Its application in negative voltage inverters, power amplifiers, and audio systems is particularly prominent, providing the system with higher power conversion efficiency and longer operating life.

6. **Consumer Electronics**:
The UPA1951TE-VB is also widely used in various consumer electronics products, especially in portable electronic devices, smartphones, laptops and other devices, as a core component for negative power supply and current control. Its high-efficiency characteristics help improve the battery efficiency of these devices, extend the use time, and reduce the power loss of the device.

7. **Automotive Electronics**:
The UPA1951TE-VB is also used in the field of automotive electronics, especially in vehicle power management systems. With the popularity of electric vehicles and smart cars, the demand for negative voltage power supplies and high-efficiency power management systems continues to increase. This MOSFET can provide reliable current control and power conversion, and is widely used in electric vehicle battery management, on-board chargers, on-board power systems and other fields.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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