UPA1951TE-VB Product details
Product introduction:
UPA1951TE-VB is a high-efficiency dual P-channel MOSFET in SOT23-6 package, designed for low-voltage power management systems. Its withstand voltage (VDS) is -20V and gate voltage (VGS) is ±12V, suitable for negative voltage power supply and current control applications. UPA1951TE-VB adopts Trench technology and has a low on-resistance (RDS(ON)), which is 100mΩ at VGS=2.5V and 75mΩ at VGS=4.5V, thereby greatly reducing conduction losses. The maximum leakage current (ID) of this MOSFET is -4A, and it can be used in various negative voltage power conversion, switching power supplies and synchronous rectification circuits, especially for applications requiring high efficiency and low loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
- **Model**: UPA1951TE-VB
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Withstand voltage (VDS)**: -20V
- **Gate voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ (at VGS=2.5V)
- 75mΩ (at VGS=4.5V)
- **Maximum leakage current (ID)**: -4A
- **Technology type**: Trench technology
- **Maximum operating temperature**: +150°C
- **Reverse recovery characteristics**: Suitable for high-speed switching operation
- **Conduction loss**: Low loss, suitable for high-efficiency systems
Domain and module applications:
3. **Battery Management System (BMS)**:
Due to its low on-resistance and high current carrying capacity, UPA1951TE-VB plays an important role in battery management system (BMS), especially for battery charge and discharge management and current switching. Its high efficiency characteristics can effectively improve the battery charging efficiency and extend the battery life. It is widely used in portable battery-driven devices, power tools, electric bicycles, etc. to ensure the stable operation of battery management system.
4. **DC-DC Converter**:
UPA1951TE-VB is very suitable for use in DC-DC converters due to its low on-resistance and fast switching characteristics. It is able to handle higher currents and reduce conversion losses, especially in applications with low voltage and high efficiency requirements, such as low-voltage power adapters and fast chargers. This MOSFET helps to improve the energy efficiency of the power supply and reduce energy waste.
5. **Negative Voltage Inverters and Power Amplifiers**:
In high-efficiency power conversion circuits such as inverters and power amplifiers, the low on-resistance of the UPA1951TE-VB enables it to effectively reduce energy loss and maintain stable current output during high-frequency switching. Its application in negative voltage inverters, power amplifiers, and audio systems is particularly prominent, providing the system with higher power conversion efficiency and longer operating life.
6. **Consumer Electronics**:
The UPA1951TE-VB is also widely used in various consumer electronics products, especially in portable electronic devices, smartphones, laptops and other devices, as a core component for negative power supply and current control. Its high-efficiency characteristics help improve the battery efficiency of these devices, extend the use time, and reduce the power loss of the device.
7. **Automotive Electronics**:
The UPA1951TE-VB is also used in the field of automotive electronics, especially in vehicle power management systems. With the popularity of electric vehicles and smart cars, the demand for negative voltage power supplies and high-efficiency power management systems continues to increase. This MOSFET can provide reliable current control and power conversion, and is widely used in electric vehicle battery management, on-board chargers, on-board power systems and other fields.
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