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UPA1950TE-VB Product details
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UPA1950TE-VB MOSFET Product Introduction
UPA1950TE-VB is a dual P-channel MOSFET in SOT23-6 package, configured as a dual-channel design (P+P-Channel). Its maximum drain-source voltage (V_DS) is -20V, suitable for low-voltage systems. The operating range of the gate-source voltage (V_GS) is ±12V, and the threshold voltage (V_th) is -0.6V. It has a low turn-on gate voltage and is very suitable for working at a lower drive voltage. The on-resistance (R_DS(ON)) of UPA1950TE-VB is 100mΩ at V_GS = 2.5V and 75mΩ at V_GS = 4.5V. It has excellent conductivity and provides low power loss at lower voltages. The maximum drain current (I_D) is -4A, suitable for handling medium-power loads. Using Trench technology, this MOSFET provides low on-resistance and fast switching performance, making it an ideal choice for power management and switching circuits.
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UPA1950TE-VB is a dual P-channel MOSFET in SOT23-6 package, configured as a dual-channel design (P+P-Channel). Its maximum drain-source voltage (V_DS) is -20V, suitable for low-voltage systems. The operating range of the gate-source voltage (V_GS) is ±12V, and the threshold voltage (V_th) is -0.6V. It has a low turn-on gate voltage and is very suitable for working at a lower drive voltage. The on-resistance (R_DS(ON)) of UPA1950TE-VB is 100mΩ at V_GS = 2.5V and 75mΩ at V_GS = 4.5V. It has excellent conductivity and provides low power loss at lower voltages. The maximum drain current (I_D) is -4A, suitable for handling medium-power loads. Using Trench technology, this MOSFET provides low on-resistance and fast switching performance, making it an ideal choice for power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
UPA1950TE-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ @ V_GS = 2.5V
- 75mΩ @ V_GS = 4.5V
- **Maximum leakage current (I_D)**: -4A
- **Technology**: Trench
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- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ @ V_GS = 2.5V
- 75mΩ @ V_GS = 4.5V
- **Maximum leakage current (I_D)**: -4A
- **Technology**: Trench
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Domain and module applications：
Application areas and module examples of UPA1950TE-VB MOSFET
1. **Battery Management System (BMS)**
UPA1950TE-VB is a key component in battery management systems, especially in low-voltage systems. Its low on-resistance (75mΩ@V_GS=4.5V) and maximum drain current of 4A enable efficient control of the battery charge and discharge process. This MOSFET can help achieve more efficient battery charge and discharge management, and is suitable for applications such as smart home devices, wearable devices, and mobile power supplies to extend battery life and ensure safe operation of devices.
2. **Low-power switching circuits**
Due to its low threshold voltage (V_th = -0.6V), UPA1950TE-VB is ideal for use in low-power switching circuits. Its fast response and low on-resistance make it an ideal choice for power switching and battery-powered devices. Especially in smart switches, sensor interfaces, and small electronic devices, UPA1950TE-VB provides efficient current control and switching functions.
3. **Low-voltage DC-DC converter**
In low-voltage DC-DC converters, UPA1950TE-VB can be used as an efficient switching element. Due to its low on-resistance, it can effectively reduce switching losses and improve overall conversion efficiency. It is particularly suitable for consumer electronics, wireless devices, embedded systems and other fields, and can ensure high-efficiency power conversion at lower input voltages.
4. **LED driver power supply**
In LED driver power supply applications, the low on-resistance and high efficiency of UPA1950TE-VB make it very suitable for current control to ensure stable operation of LEDs. It can be widely used in home lighting, advertising display, automotive lighting and other fields to provide stable and energy-saving power solutions.
5. **Power tools and smart devices**
In power tools and other smart devices, UPA1950TE-VB can be used for functions such as load switching, motor driving and battery management to help achieve efficient battery utilization and long-term operation. Due to its efficient switching characteristics, it can reduce heat loss in the device and provide longer operating time, improving user experience.
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In summary, UPA1950TE-VB, as a low-voltage, high-efficiency dual P-type MOSFET, is suitable for a variety of low-power, low-voltage power management applications. It can provide efficient current control and reduce power loss. It is widely used in battery management systems, power tools, LED driver power supplies, and low-voltage DC-DC converters to help improve the efficiency and reliability of the overall system.
1. **Battery Management System (BMS)**
UPA1950TE-VB is a key component in battery management systems, especially in low-voltage systems. Its low on-resistance (75mΩ@V_GS=4.5V) and maximum drain current of 4A enable efficient control of the battery charge and discharge process. This MOSFET can help achieve more efficient battery charge and discharge management, and is suitable for applications such as smart home devices, wearable devices, and mobile power supplies to extend battery life and ensure safe operation of devices.
2. **Low-power switching circuits**
Due to its low threshold voltage (V_th = -0.6V), UPA1950TE-VB is ideal for use in low-power switching circuits. Its fast response and low on-resistance make it an ideal choice for power switching and battery-powered devices. Especially in smart switches, sensor interfaces, and small electronic devices, UPA1950TE-VB provides efficient current control and switching functions.
3. **Low-voltage DC-DC converter**
In low-voltage DC-DC converters, UPA1950TE-VB can be used as an efficient switching element. Due to its low on-resistance, it can effectively reduce switching losses and improve overall conversion efficiency. It is particularly suitable for consumer electronics, wireless devices, embedded systems and other fields, and can ensure high-efficiency power conversion at lower input voltages.
4. **LED driver power supply**
In LED driver power supply applications, the low on-resistance and high efficiency of UPA1950TE-VB make it very suitable for current control to ensure stable operation of LEDs. It can be widely used in home lighting, advertising display, automotive lighting and other fields to provide stable and energy-saving power solutions.
5. **Power tools and smart devices**
In power tools and other smart devices, UPA1950TE-VB can be used for functions such as load switching, motor driving and battery management to help achieve efficient battery utilization and long-term operation. Due to its efficient switching characteristics, it can reduce heat loss in the device and provide longer operating time, improving user experience.
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In summary, UPA1950TE-VB, as a low-voltage, high-efficiency dual P-type MOSFET, is suitable for a variety of low-power, low-voltage power management applications. It can provide efficient current control and reduce power loss. It is widely used in battery management systems, power tools, LED driver power supplies, and low-voltage DC-DC converters to help improve the efficiency and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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