UPA1917TE-VB Product details
Product introduction:
**UPA1917TE-VB** is a **single P-channel** MOSFET in **SOT23-6** package, designed for high-efficiency switching applications. This MOSFET has a **-30V** maximum drain-source voltage (VDS), suitable for low-voltage circuits, and supports **±20V gate-source voltage (VGS)**, allowing it to work in a variety of driving environments. It has a low **on-resistance (RDS(ON))**, which is **54mΩ** at **VGS=4.5V** and **49mΩ** at **VGS=10V**. These characteristics make this MOSFET have lower power loss during switching and improve the overall efficiency of the system.
Its maximum drain current (ID) is **-4.8A**, suitable for medium current load applications. Due to the use of **Trench technology**, this MOSFET has excellent switching characteristics and is suitable for use in high-frequency switching power supplies, battery protection circuits, DC-DC converters and other high-efficiency power management systems. This model is particularly suitable for miniaturized design and can meet the power density and efficiency requirements of **small portable devices** and **high-efficiency power modules**.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: UPA1917TE-VB
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Maximum power dissipation (Pd)**: 1W (specific value depends on heat dissipation design)
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT23-6
- **Maximum switching frequency**: 100kHz (depending on application circuit)
- **Reverse recovery time**: 40ns (typical)
Domain and module applications:
**Battery Management System (BMS)**
**UPA1917TE-VB** can be used as a key switching element in **Battery Management System** and is widely used in **Battery Protection Circuit** (BMS). The **low on-resistance** characteristic of this MOSFET enables it to reduce unnecessary energy loss during battery protection, and the **maximum leakage current** reaches **-4.8A**, which enables it to withstand the current generated during battery charging and discharging, thereby improving the stability and efficiency of the system. It provides reliable switching control in **lithium battery protection**, **overcharge and over-discharge protection** to ensure battery safety.
**DC-DC Converter**
In **DC-DC Converter**, **UPA1917TE-VB** is used as an **high-efficiency switching element** to effectively convert voltage. The low **RDS(ON)** and high **ID** capabilities of this MOSFET make it suitable for **high current conversion applications**, such as **portable devices, communication equipment**, etc. By reducing switching losses and improving efficiency, this MOSFET provides devices with more efficient power management, especially in battery-powered systems in **smartphones, tablets** and **wireless devices**.
**Low-power power management**
In **low-power power management** systems, the **UPA1917TE-VB** is widely used in **high-efficiency power modules** and **miniaturized designs**. With its low on-resistance, this MOSFET can improve the overall conversion efficiency of the power supply. It is particularly suitable for systems that require **low-power design**, such as **wireless sensors, IoT devices** and **wearable devices**. The **switching speed** of the MOSFET makes it suitable for use in fast-response power management modules, thereby optimizing the power consumption of the device and extending battery life.
**LED drive circuit**
In the **LED drive circuit**, the **UPA1917TE-VB** is used to efficiently regulate the drive current of the LED to ensure stable current output. Due to the **low on-resistance** and **high current carrying capacity** of this MOSFET, it can effectively reduce energy loss and thus improve the efficiency of LED driving. It is widely used in **LED lighting, backlight modules** and **display drivers**. Efficient current control helps reduce heat generation and improve overall system stability.
**Audio amplifier power management**
**UPA1917TE-VB** is also important in **audio amplifier power management** systems. This MOSFET can provide a stable power supply to ensure the high-fidelity sound quality output of audio equipment. Its low **RDS(ON)** and **high current carrying capacity** enable it to work stably under rapidly changing load conditions, and is suitable for **car audio systems**, **home theaters** and **professional audio equipment** in power management, providing efficient power switching.
**Power Regulation and High-Frequency Switching Power Supply**
**UPA1917TE-VB** As a switching element in **power regulator**, it can reduce power loss and improve conversion efficiency in high-frequency switching power supply applications. It plays an important role in high-efficiency power systems in **AC adapters, solar power supplies** and other fields, and is suitable for devices and applications that require low power consumption and high reliability. Through its excellent switching characteristics, it optimizes the high-frequency conversion process and improves the overall efficiency of the power system.
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**UPA1917TE-VB** is a **low-power, low-on-resistance P-channel MOSFET** with **high current carrying capacity**, which is widely used in **battery management, power conversion, LED driving, power modules** and other fields. It can provide support for high-efficiency power management systems, helping devices find a balance between low power consumption and high efficiency, and improving battery life and system efficiency.
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