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UPA1916TE-VB Product details
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1. **Product Introduction:**
UPA1916TE-VB is a high-performance single P-channel power MOSFET in a small SOT23-6 package, designed for low-voltage power management and power switch control applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which is suitable for low-voltage controlled load switches, reverse current protection, and battery management. The on-resistance (RDS(ON)) of UPA1916TE-VB is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V, with low conduction loss, ensuring minimal heat loss during efficient operation. Its turn-on threshold voltage (Vth) is -1.7V, which can be turned on at a lower gate voltage, suitable for low-voltage drive applications. The maximum drain current (ID) of this MOSFET is -4.8A, which can meet the current requirements of general small power control and switching. Using Trench technology, UPA1916TE-VB provides excellent switching characteristics and low switching losses, suitable for a variety of application scenarios, and has high working stability and reliability.
UPA1916TE-VB is a high-performance single P-channel power MOSFET in a small SOT23-6 package, designed for low-voltage power management and power switch control applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which is suitable for low-voltage controlled load switches, reverse current protection, and battery management. The on-resistance (RDS(ON)) of UPA1916TE-VB is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V, with low conduction loss, ensuring minimal heat loss during efficient operation. Its turn-on threshold voltage (Vth) is -1.7V, which can be turned on at a lower gate voltage, suitable for low-voltage drive applications. The maximum drain current (ID) of this MOSFET is -4.8A, which can meet the current requirements of general small power control and switching. Using Trench technology, UPA1916TE-VB provides excellent switching characteristics and low switching losses, suitable for a variety of application scenarios, and has high working stability and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. **Detailed parameter description:**
- **Package type**: SOT23-6
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology process**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT23-6
- **Application areas**: Suitable for battery management, power management, load switch, reverse current protection, LED drive, etc.
- **Package type**: SOT23-6
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology process**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT23-6
- **Application areas**: Suitable for battery management, power management, load switch, reverse current protection, LED drive, etc.
Domain and module applications：
3. **Application fields and module examples:**
- **Battery Management System (BMS)**: UPA1916TE-VB plays an important role in battery management systems, especially in battery management for power tools, electric vehicles, smartphones and portable devices. Due to its low on-resistance (RDS(ON) = 49mΩ@VGS=10V) and high current carrying capacity (maximum drain current of -4.8A), this MOSFET can provide efficient current switching function in battery charge and discharge control circuits. It helps to efficiently manage the battery charging process, prevent problems such as overcurrent and short circuit, extend the battery life, and improve the efficiency and safety of the battery system.
- **Load switch control**: In low-power applications, UPA1916TE-VB is suitable for load switch control, especially those scenarios that require P-channel MOSFETs, such as low-voltage power switches, automation equipment and embedded systems. It can be used in battery-powered devices to control the on and off of loads, with low power consumption and efficient current conduction capability. Due to its low RDS(ON) characteristics, it can reduce switching losses and improve system efficiency, and is suitable for various small power control modules.
- **Reverse current protection**: UPA1916TE-VB performs well in applications that need to prevent reverse current flow, especially in battery chargers and low-voltage power modules. Its P-channel characteristics make it an ideal reverse current protection device, which can effectively prevent reverse current from entering the battery or other loads and protect the equipment from damage. It is widely used in portable devices, energy storage systems and car chargers.
- **LED driver power supply**: UPA1916TE-VB can be used in LED driver power supplies as an efficient switching controller. In low-power and medium-power LED applications, it can achieve efficient current conduction and effectively regulate the current flow to drive LED modules. Due to its low on-resistance, it can reduce heat generation and maintain high efficiency of the system, and is suitable for LED lighting, backlight and other lighting control applications.
- **Low Voltage Power Management**: The UPA1916TE-VB can also be used in other low voltage power management applications, especially those that require efficient switch control and reverse current protection. For example, in consumer electronics, wireless sensors, portable battery-powered devices, and embedded systems, this MOSFET provides reliable power control and protection. Its compact SOT23-6 package makes it ideal for space-constrained applications, providing reliable power management and protection for small devices.
Through these application examples, we can see that the UPA1916TE-VB has a wide range of application potential in low voltage power management, load switch control, battery management, LED driving and other fields. Its low on-resistance, high efficiency and high current carrying capacity make it an ideal choice for many low voltage power control and power management applications.
- **Battery Management System (BMS)**: UPA1916TE-VB plays an important role in battery management systems, especially in battery management for power tools, electric vehicles, smartphones and portable devices. Due to its low on-resistance (RDS(ON) = 49mΩ@VGS=10V) and high current carrying capacity (maximum drain current of -4.8A), this MOSFET can provide efficient current switching function in battery charge and discharge control circuits. It helps to efficiently manage the battery charging process, prevent problems such as overcurrent and short circuit, extend the battery life, and improve the efficiency and safety of the battery system.
- **Load switch control**: In low-power applications, UPA1916TE-VB is suitable for load switch control, especially those scenarios that require P-channel MOSFETs, such as low-voltage power switches, automation equipment and embedded systems. It can be used in battery-powered devices to control the on and off of loads, with low power consumption and efficient current conduction capability. Due to its low RDS(ON) characteristics, it can reduce switching losses and improve system efficiency, and is suitable for various small power control modules.
- **Reverse current protection**: UPA1916TE-VB performs well in applications that need to prevent reverse current flow, especially in battery chargers and low-voltage power modules. Its P-channel characteristics make it an ideal reverse current protection device, which can effectively prevent reverse current from entering the battery or other loads and protect the equipment from damage. It is widely used in portable devices, energy storage systems and car chargers.
- **LED driver power supply**: UPA1916TE-VB can be used in LED driver power supplies as an efficient switching controller. In low-power and medium-power LED applications, it can achieve efficient current conduction and effectively regulate the current flow to drive LED modules. Due to its low on-resistance, it can reduce heat generation and maintain high efficiency of the system, and is suitable for LED lighting, backlight and other lighting control applications.
- **Low Voltage Power Management**: The UPA1916TE-VB can also be used in other low voltage power management applications, especially those that require efficient switch control and reverse current protection. For example, in consumer electronics, wireless sensors, portable battery-powered devices, and embedded systems, this MOSFET provides reliable power control and protection. Its compact SOT23-6 package makes it ideal for space-constrained applications, providing reliable power management and protection for small devices.
Through these application examples, we can see that the UPA1916TE-VB has a wide range of application potential in low voltage power management, load switch control, battery management, LED driving and other fields. Its low on-resistance, high efficiency and high current carrying capacity make it an ideal choice for many low voltage power control and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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