UPA1911ATE-VB Product details
Product introduction:
**UPA1911ATE-VB** is a single-channel P-type MOSFET in a SOT-23-6 package, suitable for a variety of low-power and high-efficiency applications. This MOSFET has a maximum drain-source voltage (V_DS) of -30V and a gate-source voltage (V_GS) of ±20V, providing excellent conduction performance. Its threshold voltage (V_th) is -1.7V, and its on-resistance (R_DS(on)) is 54mΩ (V_GS = 4.5V) and 49mΩ (V_GS = 10V), respectively, making it important in areas such as efficient power management, battery-powered devices, and motor control. Based on Trench technology, UPA1911ATE-VB provides lower switching losses and higher system efficiency, making it an ideal choice for designing small and efficient systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: UPA1911ATE-VB
- **Package**: SOT-23-6
- **Configuration**: Single channel P-type
- **V_DS (drain-source voltage)**: -30V
- **V_GS (gate-source voltage)**: ±20V
- **V_th (threshold voltage)**: -1.7V
- **R_DS(on) (on-resistance)**:
- 54mΩ @ V_GS = 4.5V
- 49mΩ @ V_GS = 10V
- **ID (maximum drain current)**: -4.8A
- **Technology**: Trench technology
Domain and module applications:
1. **Power management and converters**:
Due to its low on-resistance and high efficiency, the UPA1911ATE-VB is particularly suitable for use in low-power power management modules, especially power converters for battery-powered devices. Its excellent switching characteristics and low power loss make it an ideal choice for DC-DC converters, AC-DC power adapters and other power management solutions.
2. **Consumer electronics**:
In smartphones, tablets, portable audio and other consumer electronics, the UPA1911ATE-VB can be used in battery-powered circuits to help extend the battery life of the device and improve overall energy efficiency. Low on-resistance effectively reduces energy loss and optimizes battery life.
3. **Motor drive system**:
This MOSFET can be used in small electric motor drive circuits, especially in robots, home appliances and smart home devices. The high current carrying capacity and low R_DS(on) of UPA1911ATE-VB can provide smooth driving performance, ensuring efficient and stable motor control.
4. **LED driving circuit**:
In LED lighting systems, UPA1911ATE-VB can be used as a current control switch to ensure stable operation of LEDs. Low on-resistance helps reduce power loss and improve system efficiency, especially in applications that require efficient power management.
5. **Automotive electronic systems**:
This MOSFET is suitable for power management and electric control modules in automotive electronic systems, such as on-board battery management systems (BMS) and electric vehicle drive systems. Low on-resistance helps reduce system power consumption and improve energy efficiency, suitable for efficient power management of electric and hybrid vehicles.
6. **Smart home applications**:
UPA1911ATE-VB can also be used in power management modules of smart home devices, such as smart lighting control, smart curtain control, and various sensor modules. Its compact package and high performance design are ideal for space-constrained applications.
Technical support:
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