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UK4145L-TQ2-T-VB Product details

Product introduction:

1. **Product Introduction:**
UK4145L-TQ2-T-VB is a high-performance unipolar N-channel power MOSFET in TO263 package, designed for high-power applications. With a maximum drain-source voltage (VDS) of 60V, this MOSFET is suitable for medium and high voltage power management and electric equipment. Its ultra-low on-resistance (RDS(ON)) is 4mΩ@VGS=10V, which can significantly reduce energy loss and improve system efficiency. The device has a large current carrying capacity with a maximum drain current (ID) of 150A, and is suitable for power conversion and power control applications requiring high current. Using advanced Trench technology, this MOSFET provides good switching performance and thermal stability, and is widely used in high-efficiency power supplies, power tools, and electric vehicles.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. **Detailed parameter description:**
- **Package type**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Package size**: TO263
- **Application areas**: Suitable for power management systems, power tools, electric vehicles, DC-DC converters, etc.

Domain and module applications:

3. **Application fields and module examples:**

- **High-efficiency power management system**: The low on-resistance (RDS(ON) = 4mΩ) of UK4145L-TQ2-T-VB makes it an ideal choice for power management systems, especially in high current conversion applications such as power converters, UPS (uninterruptible power supply) systems, etc. The high current carrying capacity and low power consumption characteristics of this MOSFET enable stable operation under high load conditions, improving the energy efficiency and reliability of the entire power system.

- **Power tool power module**: In the battery management and power conversion system of power tools, UK4145L-TQ2-T-VB provides efficient current control to ensure that the tool can maintain low heat loss under long-term high power output. Its ultra-low on-resistance ensures high efficiency during frequent switching cycles, suitable for power tools, laser cutters, electric drills and other equipment.

- **Electric Vehicles**: For battery management and motor drive systems in electric vehicles (such as electric bicycles, electric cars, etc.), the UK4145L-TQ2-T-VB provides stable current control and high-efficiency power transmission, ensuring efficient energy conversion and reducing energy loss. The high current carrying capacity and low on-resistance of this MOSFET make it particularly suitable for power control modules in electric drive systems.

- **DC-DC Converters**: In DC-DC converters, the low on-resistance and high current capability of the UK4145L-TQ2-T-VB make it an ideal choice, especially in scenarios requiring efficient power conversion, such as power management of solar panels, industrial power supplies, and communication equipment. The MOSFET's Trench technology ensures its fast switching speed and low switching losses, making it suitable for high-frequency, high-power applications.

These examples illustrate the wide applicability of this MOSFET in a variety of high-power conversion, high-current applications, especially in areas that require efficient power management, fast switching, and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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