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UK3019G-AE2-R-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**UK3019G-AE2-R-VB** is a unipolar N-type power MOSFET in SOT23-3 package with good switching performance and low on-resistance, suitable for low-power, high-efficiency applications. This product has a drain-source voltage (VDS) of 60V and a maximum current carrying capacity (ID) of 0.3A. The use of Trench technology enables this MOSFET to provide excellent performance in a small package, especially suitable for power management, battery-powered devices and other low-power electronic systems.
**UK3019G-AE2-R-VB** is a unipolar N-type power MOSFET in SOT23-3 package with good switching performance and low on-resistance, suitable for low-power, high-efficiency applications. This product has a drain-source voltage (VDS) of 60V and a maximum current carrying capacity (ID) of 0.3A. The use of Trench technology enables this MOSFET to provide excellent performance in a small package, especially suitable for power management, battery-powered devices and other low-power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
2. Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V: 3100mΩ
- At 10V: 2800mΩ
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Package type**: SOT23-3
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V: 3100mΩ
- At 10V: 2800mΩ
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and modules
1. **Low power supply management**:
- **Application examples**: In the power management modules of portable electronic devices such as smartphones and tablets, UK3019G-AE2-R-VB can be used as a key component of the switching regulator. In these applications, the low on-resistance (RDS(ON)) ensures higher efficiency and longer battery life.
2. **Switching power supplies and DC-DC converters**:
- **Application examples**: In the design of efficient DC-DC converters, UK3019G-AE2-R-VB is suitable as a low-power switch. Its low RDS(ON) value reduces power losses, thereby improving the efficiency of the entire system, especially in applications requiring low static power consumption.
3. **Battery-powered devices**:
- **Application examples**: In battery-powered wireless devices, such as wireless sensors, wearable devices, etc., UK3019G-AE2-R-VB can be used as a power switch to effectively control the battery power supply, reduce power consumption, and extend the working time of the device.
4. **Automation and control systems**:
- **Application examples**: In the power management module of the automation control system, UK3019G-AE2-R-VB can be used as a switch control element to ensure stable operation of the system under different working conditions.
Through the application of these fields, UK3019G-AE2-R-VB MOSFET can reduce the overall power consumption of the device while providing high efficiency and long life, meeting the needs of modern portable electronic devices and efficient power management.
1. **Low power supply management**:
- **Application examples**: In the power management modules of portable electronic devices such as smartphones and tablets, UK3019G-AE2-R-VB can be used as a key component of the switching regulator. In these applications, the low on-resistance (RDS(ON)) ensures higher efficiency and longer battery life.
2. **Switching power supplies and DC-DC converters**:
- **Application examples**: In the design of efficient DC-DC converters, UK3019G-AE2-R-VB is suitable as a low-power switch. Its low RDS(ON) value reduces power losses, thereby improving the efficiency of the entire system, especially in applications requiring low static power consumption.
3. **Battery-powered devices**:
- **Application examples**: In battery-powered wireless devices, such as wireless sensors, wearable devices, etc., UK3019G-AE2-R-VB can be used as a power switch to effectively control the battery power supply, reduce power consumption, and extend the working time of the device.
4. **Automation and control systems**:
- **Application examples**: In the power management module of the automation control system, UK3019G-AE2-R-VB can be used as a switch control element to ensure stable operation of the system under different working conditions.
Through the application of these fields, UK3019G-AE2-R-VB MOSFET can reduce the overall power consumption of the device while providing high efficiency and long life, meeting the needs of modern portable electronic devices and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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