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UK3018G-AE2-R-VB Product details

Product introduction:

Product Introduction

**UK3018G-AE2-R-VB** is a unipolar N-type MOSFET in SOT23-3 package, suitable for low-power electronic devices, especially those applications with high requirements on size and efficiency. It has a low RDS(ON), which enables it to provide good conduction performance even at low voltage. This MOSFET supports a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. It has excellent switching characteristics and low on-resistance, making it an excellent performer in power management and miniaturized circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
Detailed parameter description

- **Package type**: SOT23-3
- **Configuration type**: Unipolar N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology type**: Trench

Domain and module applications:

Applicable fields and module examples

1. **Low-power power management**:
Due to its low on-resistance and efficient switching performance, the UK3018G-AE2-R-VB can be widely used in low-power power management systems, such as portable devices and battery-powered circuits. It can effectively control power switching, improve efficiency, and reduce energy loss, and is particularly suitable for application scenarios that require efficient and stable power.

2. **Smart cards and sensor modules**:
This MOSFET can be used in smart cards and low-power sensor modules, where small current control and fast switching capabilities are usually required. Its compact size and stable switching characteristics make it an ideal choice for these fields.

3. **Small electronic devices**:
In small consumer electronic devices such as watches, portable audio and other personal electronic products, the UK3018G-AE2-R-VB is able to provide precise current control and efficient power switching functions. Its small size and low on-resistance make it suitable for compact circuit design.

4. **LED drive circuit**:
In LED lighting systems, UK3018G-AE2-R-VB can be used in LED drive circuits, especially in situations where low current and low power loss are required. Due to its lower on-resistance, it helps to improve the current control accuracy and improve the overall efficiency of the system.

5. **Wireless communication equipment**:
For wireless communication equipment (such as Bluetooth devices and Wi-Fi modules), this MOSFET can be used for current control of switching power modules and power amplifiers, providing efficient signal processing and low power consumption, suitable for wireless systems requiring low current.

Due to its excellent switching characteristics, low on-resistance and compact packaging, this MOSFET is suitable for a variety of low-power electronic applications, especially in situations where precise current control and miniaturization are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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