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UF830L-TN3-R-VB Product details
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UF830L-TN3-R-VB MOSFET Product Introduction
UF830L-TN3-R-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications, with a withstand voltage of up to 650V. Its gate-source voltage range is ±30V, which can withstand higher gate drive voltages and adapt to various control circuits. This model has a threshold voltage of 3.5V and good switching characteristics. The on-resistance RDS(ON) is 1000mΩ (@VGS=10V), which means that under normal operating conditions, although its conduction loss is higher than other low RDS(ON) MOSFETs, it is still suitable for some applications with low power requirements or relatively small currents. The maximum leakage current is 5A, and the SJ_Multi-EPI technology is used to provide stable performance at higher operating temperatures. This MOSFET is suitable for medium-power power conversion systems and other high-voltage switching power supplies.
UF830L-TN3-R-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications, with a withstand voltage of up to 650V. Its gate-source voltage range is ±30V, which can withstand higher gate drive voltages and adapt to various control circuits. This model has a threshold voltage of 3.5V and good switching characteristics. The on-resistance RDS(ON) is 1000mΩ (@VGS=10V), which means that under normal operating conditions, although its conduction loss is higher than other low RDS(ON) MOSFETs, it is still suitable for some applications with low power requirements or relatively small currents. The maximum leakage current is 5A, and the SJ_Multi-EPI technology is used to provide stable performance at higher operating temperatures. This MOSFET is suitable for medium-power power conversion systems and other high-voltage switching power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
UF830L-TN3-R-VB MOSFET detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multi-layer EPI technology)
- **Switching speed**: Suitable for general switching applications with moderate operating frequency
- **Operating temperature range**: Can operate at an ambient temperature of up to 150°C
- **Applicable circuits**: Suitable for medium and low power applications such as switching power supplies, power conversion, and drive circuits.
- **Package**: TO252
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multi-layer EPI technology)
- **Switching speed**: Suitable for general switching applications with moderate operating frequency
- **Operating temperature range**: Can operate at an ambient temperature of up to 150°C
- **Applicable circuits**: Suitable for medium and low power applications such as switching power supplies, power conversion, and drive circuits.
Domain and module applications：
Application fields and module examples
Due to its high withstand voltage and medium on-resistance, the UF830L-TN3-R-VB MOSFET is suitable for the following fields and modules:
1. **Medium and low power power conversion systems**
Suitable for medium and low power power conversion applications such as DC-DC converters, linear power supplies, isolated power supplies, etc. Its 650V withstand voltage enables it to cope with higher voltage conversion scenarios and is suitable for driving relatively small loads.
2. **Power management module**
Due to its reasonable current carrying capacity (5A) and on-resistance (1000mΩ), this MOSFET is suitable for the power switching link in the power management module, especially when the load current is not particularly large, it can efficiently convert energy.
3. **High-voltage switching power supply**
It can be used in high-voltage switching power supply systems such as home appliances and automotive electronics. UF830L-TN3-R-VB has a high withstand voltage capability and is suitable for dealing with higher voltage loads. Due to its low on-resistance, it can reduce power loss.
4. **Overload protection circuit**
In some power protection systems, UF830L-TN3-R-VB can be used in overload protection circuits due to its moderate on-resistance and high withstand voltage, ensuring that the circuit can switch safely and efficiently during operation to avoid damage.
Due to its high withstand voltage and medium on-resistance, the UF830L-TN3-R-VB MOSFET is suitable for the following fields and modules:
1. **Medium and low power power conversion systems**
Suitable for medium and low power power conversion applications such as DC-DC converters, linear power supplies, isolated power supplies, etc. Its 650V withstand voltage enables it to cope with higher voltage conversion scenarios and is suitable for driving relatively small loads.
2. **Power management module**
Due to its reasonable current carrying capacity (5A) and on-resistance (1000mΩ), this MOSFET is suitable for the power switching link in the power management module, especially when the load current is not particularly large, it can efficiently convert energy.
3. **High-voltage switching power supply**
It can be used in high-voltage switching power supply systems such as home appliances and automotive electronics. UF830L-TN3-R-VB has a high withstand voltage capability and is suitable for dealing with higher voltage loads. Due to its low on-resistance, it can reduce power loss.
4. **Overload protection circuit**
In some power protection systems, UF830L-TN3-R-VB can be used in overload protection circuits due to its moderate on-resistance and high withstand voltage, ensuring that the circuit can switch safely and efficiently during operation to avoid damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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