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UF830L-TM3-T-VB Product details
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1. **Product Introduction**
UF830L-TM3-T-VB is a unipolar N-channel MOSFET in TO251 package, designed for high voltage applications, with a drain-source voltage (VDS) of 650V, capable of withstanding a maximum gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its on-resistance is 950mΩ @ VGS = 10V, and its maximum drain current is 5A. Using SJ_Multi-EPI technology (multi-layer reverse super junction technology), it can provide lower conduction loss and higher current control performance, and is suitable for a variety of power electronics applications requiring high efficiency and low energy consumption, such as power management systems, motor drives, and power conversion.
UF830L-TM3-T-VB is a unipolar N-channel MOSFET in TO251 package, designed for high voltage applications, with a drain-source voltage (VDS) of 650V, capable of withstanding a maximum gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its on-resistance is 950mΩ @ VGS = 10V, and its maximum drain current is 5A. Using SJ_Multi-EPI technology (multi-layer reverse super junction technology), it can provide lower conduction loss and higher current control performance, and is suitable for a variety of power electronics applications requiring high efficiency and low energy consumption, such as power management systems, motor drives, and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description**
| Parameter| Description|
|-----------------------|---------------------------------------|
| **Model** | UF830L-TM3-T-VB |
| **Package type** | TO251 |
| **Configuration** | Unipolar N-channel MOSFET |
| **Maximum drain-source voltage (VDS)** | 650V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 950mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI (Multi-layer inverse super junction technology) |
| **Maximum power dissipation** | To be determined (based on calculation under specific conditions) |
| Parameter| Description|
|-----------------------|---------------------------------------|
| **Model** | UF830L-TM3-T-VB |
| **Package type** | TO251 |
| **Configuration** | Unipolar N-channel MOSFET |
| **Maximum drain-source voltage (VDS)** | 650V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 950mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI (Multi-layer inverse super junction technology) |
| **Maximum power dissipation** | To be determined (based on calculation under specific conditions) |
Domain and module applications：
3. **Application fields and module examples**
UF830L-TM3-T-VB is a high-voltage N-channel MOSFET with a VDS rating of 650V, suitable for applications requiring high voltage and high efficiency in power electronic equipment. Here are some typical examples of its application fields:
- **Switching Power Supply (SMPS)**:
In switching power supply systems, UF830L-TM3-T-VB can be used as an efficient power conversion switch, especially for AC-DC and DC-DC converters with high voltage input. Its low on-resistance and good switching characteristics make it an ideal choice for high-frequency switching power supplies, which can improve the overall efficiency of the system.
- **Motor drive system**:
In motor drive systems, UF830L-TM3-T-VB can be used in inverter design to drive the motor by controlling the switching frequency of the current. Its high withstand voltage and low on-resistance help reduce energy loss in current transmission and improve the efficiency of the drive system.
- **Solar Inverter**:
This MOSFET is suitable for use in solar inverters, especially in high voltage conversion, where it can effectively convert the high DC voltage generated by solar panels into AC. With its 650V VDS rating and low on-resistance, the UF830L-TM3-T-VB can help improve the inverter's conversion efficiency and reduce energy loss.
- **Power Amplifier**:
The UF830L-TM3-T-VB is also used in high-power RF amplifier circuits, especially where high voltage and high current are required. It can provide good switching performance and current carrying capacity in high-frequency applications.
- **LED Lighting Driver Circuit**:
In LED lighting applications, the UF830L-TM3-T-VB can be used as a switching element in LED driver circuits, especially for LED driver designs that require high voltage and low conduction losses. Its low RDS(ON) value and high switching frequency enable it to effectively control the current of LED lamps, improving system stability and efficiency.
In short, UF830L-TM3-T-VB is a high-efficiency, low-loss MOSFET, which is widely used in power electronic equipment requiring high voltage, high current and high efficiency. It can provide an ideal solution for various power management, drive circuits and power conversion modules.
UF830L-TM3-T-VB is a high-voltage N-channel MOSFET with a VDS rating of 650V, suitable for applications requiring high voltage and high efficiency in power electronic equipment. Here are some typical examples of its application fields:
- **Switching Power Supply (SMPS)**:
In switching power supply systems, UF830L-TM3-T-VB can be used as an efficient power conversion switch, especially for AC-DC and DC-DC converters with high voltage input. Its low on-resistance and good switching characteristics make it an ideal choice for high-frequency switching power supplies, which can improve the overall efficiency of the system.
- **Motor drive system**:
In motor drive systems, UF830L-TM3-T-VB can be used in inverter design to drive the motor by controlling the switching frequency of the current. Its high withstand voltage and low on-resistance help reduce energy loss in current transmission and improve the efficiency of the drive system.
- **Solar Inverter**:
This MOSFET is suitable for use in solar inverters, especially in high voltage conversion, where it can effectively convert the high DC voltage generated by solar panels into AC. With its 650V VDS rating and low on-resistance, the UF830L-TM3-T-VB can help improve the inverter's conversion efficiency and reduce energy loss.
- **Power Amplifier**:
The UF830L-TM3-T-VB is also used in high-power RF amplifier circuits, especially where high voltage and high current are required. It can provide good switching performance and current carrying capacity in high-frequency applications.
- **LED Lighting Driver Circuit**:
In LED lighting applications, the UF830L-TM3-T-VB can be used as a switching element in LED driver circuits, especially for LED driver designs that require high voltage and low conduction losses. Its low RDS(ON) value and high switching frequency enable it to effectively control the current of LED lamps, improving system stability and efficiency.
In short, UF830L-TM3-T-VB is a high-efficiency, low-loss MOSFET, which is widely used in power electronic equipment requiring high voltage, high current and high efficiency. It can provide an ideal solution for various power management, drive circuits and power conversion modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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