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UF730L-TN3-T-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
UF730L-TN3-T-VB is a unipolar N-channel MOSFET in TO252 package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V, can withstand a gate-source voltage (VGS) of 30V, and has a gate threshold voltage (Vth) of 3.5V. Its typical on-resistance is 700mΩ @ VGS = 10V, and it can provide a maximum current of 7A. Using SJ_Multi-EPI technology (multi-layer reverse super junction technology), this MOSFET has better current conduction performance and lower switching losses, and is suitable for high-efficiency power converters, drive circuits and other applications.
UF730L-TN3-T-VB is a unipolar N-channel MOSFET in TO252 package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V, can withstand a gate-source voltage (VGS) of 30V, and has a gate threshold voltage (Vth) of 3.5V. Its typical on-resistance is 700mΩ @ VGS = 10V, and it can provide a maximum current of 7A. Using SJ_Multi-EPI technology (multi-layer reverse super junction technology), this MOSFET has better current conduction performance and lower switching losses, and is suitable for high-efficiency power converters, drive circuits and other applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description**
| Parameter| Description|
|-----------------------|---------------------------------------|
| **Model** | UF730L-TN3-T-VB |
| **Package type** | TO252 |
| **Configuration** | Unipolar N-channel MOSFET |
| **Maximum drain-source voltage (VDS)** | 650V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 7A |
| **Technology** | SJ_Multi-EPI (Multi-layer inverse super junction technology) |
| **Maximum power dissipation** | To be determined (based on calculation under specific conditions) |
| Parameter| Description|
|-----------------------|---------------------------------------|
| **Model** | UF730L-TN3-T-VB |
| **Package type** | TO252 |
| **Configuration** | Unipolar N-channel MOSFET |
| **Maximum drain-source voltage (VDS)** | 650V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 7A |
| **Technology** | SJ_Multi-EPI (Multi-layer inverse super junction technology) |
| **Maximum power dissipation** | To be determined (based on calculation under specific conditions) |
Domain and module applications：
3. **Application fields and module examples**
UF730L-TN3-T-VB is a high-voltage, high-efficiency MOSFET suitable for a variety of power electronics applications, especially in situations requiring high voltage tolerance and low conduction losses. Here are some typical application examples:
- **Switching Power Supply (SMPS)**:
In switching power supplies, UF730L-TN3-T-VB is suitable for efficient power conversion, especially in scenarios requiring high switching frequency and low on-resistance. Due to its VDS value of 650V, it can be applied to various industrial power supplies such as AC-DC converters and DC-DC converters.
- **Motor drive circuit**:
This MOSFET can provide efficient switching control in motor drive systems, especially in inverters or drives where the switching frequency of the current is high, which can effectively reduce energy loss and improve drive efficiency.
- **Solar Inverters**:
Solar inverters require MOSFETs with higher VDS values to accommodate the high voltages obtained from the solar panels. The UF730L-TN3-T-VB is a high voltage MOSFET that enables efficient power conversion and regulation in these inverters.
- **Power Amplifier Circuits**:
In RF power amplifiers, especially for high voltage applications, this type of MOSFET has excellent switching performance and current carrying capability, making it suitable for high-efficiency power amplifier designs.
- **LED Driver Circuits**:
The UF730L-TN3-T-VB can be used as an efficient switching element in LED lighting driver circuits. Due to its low on-resistance and high switching frequency, it can ensure high stability and efficiency in LED driver circuits.
Overall, UF730L-TN3-T-VB is a power electronic module suitable for applications that require high voltage carrying, low on-resistance, and efficient switching performance. It has broad application potential in power conversion, drive circuits, and power regulation.
UF730L-TN3-T-VB is a high-voltage, high-efficiency MOSFET suitable for a variety of power electronics applications, especially in situations requiring high voltage tolerance and low conduction losses. Here are some typical application examples:
- **Switching Power Supply (SMPS)**:
In switching power supplies, UF730L-TN3-T-VB is suitable for efficient power conversion, especially in scenarios requiring high switching frequency and low on-resistance. Due to its VDS value of 650V, it can be applied to various industrial power supplies such as AC-DC converters and DC-DC converters.
- **Motor drive circuit**:
This MOSFET can provide efficient switching control in motor drive systems, especially in inverters or drives where the switching frequency of the current is high, which can effectively reduce energy loss and improve drive efficiency.
- **Solar Inverters**:
Solar inverters require MOSFETs with higher VDS values to accommodate the high voltages obtained from the solar panels. The UF730L-TN3-T-VB is a high voltage MOSFET that enables efficient power conversion and regulation in these inverters.
- **Power Amplifier Circuits**:
In RF power amplifiers, especially for high voltage applications, this type of MOSFET has excellent switching performance and current carrying capability, making it suitable for high-efficiency power amplifier designs.
- **LED Driver Circuits**:
The UF730L-TN3-T-VB can be used as an efficient switching element in LED lighting driver circuits. Due to its low on-resistance and high switching frequency, it can ensure high stability and efficiency in LED driver circuits.
Overall, UF730L-TN3-T-VB is a power electronic module suitable for applications that require high voltage carrying, low on-resistance, and efficient switching performance. It has broad application potential in power conversion, drive circuits, and power regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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