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UF630L-TN3-R-VB Product details
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UF630L-TN3-R-VB Product Introduction
UF630L-TN3-R-VB is a single N-channel MOSFET in TO252 package, designed for medium voltage and medium current power control applications. With a maximum drain-source voltage (V_DS) of 200V and a maximum drain current (I_D) of 10A, this MOSFET is suitable for medium power applications such as power conversion and power regulation. It uses Trench technology and has a low on-resistance (R_DS(ON) = 245mΩ @V_GS = 10V), ensuring excellent switching performance and low power loss at low gate voltages. This makes the UF630L-TN3-R-VB an ideal choice for various applications such as power management, battery management, switching power supplies, etc. that require medium voltage and medium current capabilities.
UF630L-TN3-R-VB is a single N-channel MOSFET in TO252 package, designed for medium voltage and medium current power control applications. With a maximum drain-source voltage (V_DS) of 200V and a maximum drain current (I_D) of 10A, this MOSFET is suitable for medium power applications such as power conversion and power regulation. It uses Trench technology and has a low on-resistance (R_DS(ON) = 245mΩ @V_GS = 10V), ensuring excellent switching performance and low power loss at low gate voltages. This makes the UF630L-TN3-R-VB an ideal choice for various applications such as power management, battery management, switching power supplies, etc. that require medium voltage and medium current capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
UF630L-TN3-R-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 245mΩ @V_GS = 10V
- **Maximum leakage current (I_D)**: 10A
- **Technology**: Trench technology (reduces on-resistance and improves switching performance)
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 245mΩ @V_GS = 10V
- **Maximum leakage current (I_D)**: 10A
- **Technology**: Trench technology (reduces on-resistance and improves switching performance)
Domain and module applications：
UF630L-TN3-R-VB application areas and module examples
1. **Power management system**: The high voltage withstand capability of UF630L-TN3-R-VB makes it very suitable for power management systems, especially DC-DC converters and power regulation modules. In these applications, the MOSFET can provide efficient switching control, reduce energy loss, and improve the overall efficiency of the system. Its low on-resistance helps maintain stable performance during high-frequency switching and reduces heat generation.
2. **Battery Management System (BMS)**: UF630L-TN3-R-VB plays an important role in battery management systems, especially in the charge and discharge control of 12V, 24V or higher voltage battery packs. Its maximum leakage current of 10A and the voltage withstand capability of 200V enable it to efficiently handle the current and voltage requirements of the battery, ensuring the safety and efficiency of battery charging and discharging.
3. **Switching Mode Power Supply Module (SMPS)**: This MOSFET is suitable for medium power switching mode power supply (SMPS) applications, especially power adapters, DC power supplies, etc. By using UF630L-TN3-R-VB, efficient power conversion can be achieved, and low conduction loss can be maintained at a higher switching frequency to optimize system performance.
4. **Motor Drive Circuit**: In the motor drive circuit, UF630L-TN3-R-VB can be used for medium power motor control, providing efficient and stable current switching. This makes this MOSFET particularly suitable for DC motor (DCM) and stepper motor drive systems, especially in applications requiring higher withstand voltage.
5. **LED Driver Power**: UF630L-TN3-R-VB is suitable for driving LED lighting modules, especially in applications requiring higher voltage and stable current control. Its low R_DS(ON) and good switching performance enable it to provide high-efficiency LED drive under higher current and higher voltage conditions.
6. **Automotive Electronic Application**: This MOSFET can be used in automotive electronic systems, especially in vehicle power management, battery charging control and load regulation. Its 200V withstand voltage and 10A current capability are suitable for handling power regulation and power conversion tasks in electric vehicles.
Through UF630L-TN3-R-VB, the above applications can achieve higher efficiency, lower power loss and more stable operation performance, especially in the control of medium voltage and medium current loads.
1. **Power management system**: The high voltage withstand capability of UF630L-TN3-R-VB makes it very suitable for power management systems, especially DC-DC converters and power regulation modules. In these applications, the MOSFET can provide efficient switching control, reduce energy loss, and improve the overall efficiency of the system. Its low on-resistance helps maintain stable performance during high-frequency switching and reduces heat generation.
2. **Battery Management System (BMS)**: UF630L-TN3-R-VB plays an important role in battery management systems, especially in the charge and discharge control of 12V, 24V or higher voltage battery packs. Its maximum leakage current of 10A and the voltage withstand capability of 200V enable it to efficiently handle the current and voltage requirements of the battery, ensuring the safety and efficiency of battery charging and discharging.
3. **Switching Mode Power Supply Module (SMPS)**: This MOSFET is suitable for medium power switching mode power supply (SMPS) applications, especially power adapters, DC power supplies, etc. By using UF630L-TN3-R-VB, efficient power conversion can be achieved, and low conduction loss can be maintained at a higher switching frequency to optimize system performance.
4. **Motor Drive Circuit**: In the motor drive circuit, UF630L-TN3-R-VB can be used for medium power motor control, providing efficient and stable current switching. This makes this MOSFET particularly suitable for DC motor (DCM) and stepper motor drive systems, especially in applications requiring higher withstand voltage.
5. **LED Driver Power**: UF630L-TN3-R-VB is suitable for driving LED lighting modules, especially in applications requiring higher voltage and stable current control. Its low R_DS(ON) and good switching performance enable it to provide high-efficiency LED drive under higher current and higher voltage conditions.
6. **Automotive Electronic Application**: This MOSFET can be used in automotive electronic systems, especially in vehicle power management, battery charging control and load regulation. Its 200V withstand voltage and 10A current capability are suitable for handling power regulation and power conversion tasks in electric vehicles.
Through UF630L-TN3-R-VB, the above applications can achieve higher efficiency, lower power loss and more stable operation performance, especially in the control of medium voltage and medium current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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