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UD606L-TN5-R-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
**UD606L-TN5-R-VB** is an N+P type MOSFET with common drain configuration (Common Drain) in TO252-4L package. This MOSFET adopts Trench technology, supports drain-to-source voltage (VDS) of ±40V, and can operate under current conditions of ±50A. The device has a low on-resistance (RDS(ON)) and is suitable for efficient power management and power conversion applications.
Its main features include:
- **High current capacity**: ID is ±50A, suitable for high power drive requirements.
- **Low on-resistance**: RDS(ON) is 14mΩ and 16mΩ at 4.5V and 10V respectively, ensuring low power consumption and high efficiency operation.
- **Wide voltage range**: VDS can reach up to ±40V, adapting to a variety of operating voltage environments.
- **High gate drive voltage**: VGS supports ±20V, suitable for a variety of control circuits.
This MOSFET can be widely used in power electronics, inverters, DC-DC converters, motor drives and other high-efficiency power conversion fields.
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**UD606L-TN5-R-VB** is an N+P type MOSFET with common drain configuration (Common Drain) in TO252-4L package. This MOSFET adopts Trench technology, supports drain-to-source voltage (VDS) of ±40V, and can operate under current conditions of ±50A. The device has a low on-resistance (RDS(ON)) and is suitable for efficient power management and power conversion applications.
Its main features include:
- **High current capacity**: ID is ±50A, suitable for high power drive requirements.
- **Low on-resistance**: RDS(ON) is 14mΩ and 16mΩ at 4.5V and 10V respectively, ensuring low power consumption and high efficiency operation.
- **Wide voltage range**: VDS can reach up to ±40V, adapting to a variety of operating voltage environments.
- **High gate drive voltage**: VGS supports ±20V, suitable for a variety of control circuits.
This MOSFET can be widely used in power electronics, inverters, DC-DC converters, motor drives and other high-efficiency power conversion fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. **Detailed parameter description**
| **Parameter** | **Description** |
|-------------------|------------------------------------|
| **Model** | UD606L-TN5-R-VB |
| **Package** | TO252-4L |
| **Configuration** | Common Drain-N+P-Channel |
| **Drain to Source Voltage(VDS)** | ±40V |
| **Gate to Source Voltage(VGS)** | ±20V |
| **Threshold Voltage(Vth)** | 1.8V (N-Channel), -1.7V (P-Channel) |
| **On-resistance(RDS(ON))** | 14mΩ (N-Channel) / 14mΩ (P-Channel) @VGS=4.5V |
| **On-resistance(RDS(ON))** | 16mΩ (N-Channel) / 16mΩ (P-Channel) @VGS=10V |
| **Current (ID)** | ±50A |
| **Technology** | Trench |
| **Temperature Range** | -55°C to +150°C |
| **Maximum Power Dissipation** | 150W |
**Application Environment**: Applicable to high-efficiency power conversion, power drive and motor control.
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| **Parameter** | **Description** |
|-------------------|------------------------------------|
| **Model** | UD606L-TN5-R-VB |
| **Package** | TO252-4L |
| **Configuration** | Common Drain-N+P-Channel |
| **Drain to Source Voltage(VDS)** | ±40V |
| **Gate to Source Voltage(VGS)** | ±20V |
| **Threshold Voltage(Vth)** | 1.8V (N-Channel), -1.7V (P-Channel) |
| **On-resistance(RDS(ON))** | 14mΩ (N-Channel) / 14mΩ (P-Channel) @VGS=4.5V |
| **On-resistance(RDS(ON))** | 16mΩ (N-Channel) / 16mΩ (P-Channel) @VGS=10V |
| **Current (ID)** | ±50A |
| **Technology** | Trench |
| **Temperature Range** | -55°C to +150°C |
| **Maximum Power Dissipation** | 150W |
**Application Environment**: Applicable to high-efficiency power conversion, power drive and motor control.
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Domain and module applications：
3. **Application fields and module examples**
**1. Power conversion module (DC-DC converter)**
Due to its low on-resistance and high current carrying capacity, **UD606L-TN5-R-VB** is very suitable for use in DC-DC converters, especially in high-efficiency power supply systems. Its ±50A current capacity and ±40V voltage range enable it to effectively convert higher current voltages, suitable for high-power applications such as server power supplies, communication power supplies, and automotive power supplies.
**2. Electric motor drive module**
In electric motor drive applications, the low on-resistance and high current capability of this MOSFET ensure that the system can efficiently drive high-power motors, reduce energy losses, and improve drive efficiency. This makes it suitable for use in drive systems such as power tools, electric bicycles, and robots.
**3. Inverter**
This MOSFET is also very suitable for use in power conversion modules in solar inverters and UPS systems. Its high current handling capability and wide operating voltage range enable it to cope with power transmission requirements in a variety of complex circuits such as frequency converters, inverters and speed regulators.
**4. Battery Management System (BMS)**
UD606L-TN5-R-VB can provide precise power control and efficient current conversion in battery management systems, especially in electric vehicles and energy storage systems, which can effectively manage the battery charging and discharging process, extend battery life and improve energy efficiency.
**5. High-efficiency Power Amplifier (HPA)**
In the high-efficiency power amplifier (HPA) module in the communication system, the low RDS(ON) characteristics of this MOSFET can be used to reduce power loss, improve the efficiency and thermal stability of the overall system, and adapt to the requirements of high frequency and high power transmission.
The above are examples of the application of **UD606L-TN5-R-VB** MOSFET in multiple fields and modules, demonstrating its advantages in efficient power management and power conversion systems.
**1. Power conversion module (DC-DC converter)**
Due to its low on-resistance and high current carrying capacity, **UD606L-TN5-R-VB** is very suitable for use in DC-DC converters, especially in high-efficiency power supply systems. Its ±50A current capacity and ±40V voltage range enable it to effectively convert higher current voltages, suitable for high-power applications such as server power supplies, communication power supplies, and automotive power supplies.
**2. Electric motor drive module**
In electric motor drive applications, the low on-resistance and high current capability of this MOSFET ensure that the system can efficiently drive high-power motors, reduce energy losses, and improve drive efficiency. This makes it suitable for use in drive systems such as power tools, electric bicycles, and robots.
**3. Inverter**
This MOSFET is also very suitable for use in power conversion modules in solar inverters and UPS systems. Its high current handling capability and wide operating voltage range enable it to cope with power transmission requirements in a variety of complex circuits such as frequency converters, inverters and speed regulators.
**4. Battery Management System (BMS)**
UD606L-TN5-R-VB can provide precise power control and efficient current conversion in battery management systems, especially in electric vehicles and energy storage systems, which can effectively manage the battery charging and discharging process, extend battery life and improve energy efficiency.
**5. High-efficiency Power Amplifier (HPA)**
In the high-efficiency power amplifier (HPA) module in the communication system, the low RDS(ON) characteristics of this MOSFET can be used to reduce power loss, improve the efficiency and thermal stability of the overall system, and adapt to the requirements of high frequency and high power transmission.
The above are examples of the application of **UD606L-TN5-R-VB** MOSFET in multiple fields and modules, demonstrating its advantages in efficient power management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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