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UD3003-VB Product details

Product introduction:

**1. Product Introduction: **

**UD3003-VB** is a **single P-Channel MOSFET** in **TO252** package, designed for power management applications requiring high efficiency and high performance. This MOSFET has a **30V** high voltage withstand capability, suitable for various power switching and load driving applications. Its gate threshold voltage (Vth) is **-1.7V**, and the low gate voltage drive enables it to work stably at a lower driving voltage. **RDS(ON)** is **18mΩ** at **VGS=10V**, and the very low on-resistance helps reduce power loss and improve the overall efficiency of the system. Its **40A** high drain current carrying capacity makes it suitable for applications that require high current drive, such as power conversion, battery management, electric drive and other fields. The use of **Trench technology** effectively improves the switching speed and stability of the MOSFET and optimizes its performance in high-frequency operation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -1.7V -40A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -1.7V -40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -1.7V -40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
**2. Detailed parameter description: **

- **Model**: UD3003-VB
- **Package type**: TO252
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- **VGS = 4.5V**: 25mΩ
- **VGS = 10V**: 18mΩ
- **Maximum drain current (ID)**: -40A
- **Power loss (Pd)**: About 25W (may vary depending on the actual working environment)
- **Switching speed**: High-speed switching characteristics, suitable for high-frequency operation
- **Reverse recovery time (Trr)**: Fast reverse recovery time, supporting efficient switching
- **Input capacitance (Ciss)**: Approx. 2000pF
- **Output capacitance (Coss)**: Approx. 300pF
- **Gate capacitance (Crss)**: Approx. 30pF
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Trench technology
- **Maximum drain power loss**: 0.8W (typ)

Domain and module applications:

**3. Application fields and module examples: **

**UD3003-VB** Due to its high performance, high current carrying capacity and low on-resistance, it is suitable for a variety of fields that require efficient power conversion and precise control. The following are its specific applications in different fields and modules:

# **1. Power management and DC-DC converters **
**UD3003-VB** performs well as a switching element in **DC-DC converters**, especially for conversion systems with low voltage and high current output. Its low on-resistance reduces power loss, improves conversion efficiency and reduces heat generation, making it particularly suitable for efficient energy conversion in power modules and battery management systems.

# **6. Power switch applications **
**UD3003-VB** can be used in a variety of **power switch** applications, such as **AC/DC power modules**, **voltage regulators**, **current protection circuits**, etc. Its low on-resistance ensures efficient switching operation, and its low switching loss makes it suitable for high-frequency power management.

# **7. Inverter and UPS systems**
In **inverters** (such as solar inverters) and **uninterruptible power supply (UPS)** systems, **UD3003-VB** can be used as a switching device to achieve efficient energy conversion and current management. Its high efficiency conversion characteristics make it suitable for applications with high power and efficiency requirements, ensuring the reliability of system operation.

**Summary: **

**UD3003-VB** is an excellent **P-Channel MOSFET** suitable for a variety of power management, battery management and electric drive systems. Its **30V** withstand voltage capability and **40A** high drain current carrying capacity make it very suitable for a wide range of applications in **power converters**, **electric vehicles**, **battery management systems**, **photovoltaic inverters**, **motor control** and other fields. Low on-resistance and high switching efficiency are the significant advantages of this MOSFET, which can significantly improve the energy efficiency and working reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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