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U5N50HA-VB Product details
Back to previous pageProduct introduction：
**1. Product Introduction: **
**U5N50HA-VB** is a **single N-Channel MOSFET** in **TO251** package, with **650V** high voltage withstand capability, suitable for various high voltage switching and power management applications. The gate threshold voltage (Vth) of this MOSFET is **3.5V**, and its on-resistance (RDS(ON)) is **950mΩ**, ensuring that it can provide stable performance under high voltage and high current conditions. Its **5A** drain current capability makes it suitable for fields requiring higher current, such as power converters, battery management systems, and electric drive systems. Using **SJ_Multi-EPI technology**, it provides lower on-resistance and higher efficiency, which can significantly reduce energy loss and improve system reliability.
**U5N50HA-VB** is a **single N-Channel MOSFET** in **TO251** package, with **650V** high voltage withstand capability, suitable for various high voltage switching and power management applications. The gate threshold voltage (Vth) of this MOSFET is **3.5V**, and its on-resistance (RDS(ON)) is **950mΩ**, ensuring that it can provide stable performance under high voltage and high current conditions. Its **5A** drain current capability makes it suitable for fields requiring higher current, such as power converters, battery management systems, and electric drive systems. Using **SJ_Multi-EPI technology**, it provides lower on-resistance and higher efficiency, which can significantly reduce energy loss and improve system reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**2. Detailed parameter description: **
- **Model**: U5N50HA-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 950mΩ
- **Maximum drain current (ID)**: 5A
- **Maximum power loss (Pd)**: About 15W (the specific value depends on the working conditions)
- **Reverse recovery time (Trr)**: About 120ns
- **Input capacitance (Ciss)**: About 500pF
- **Output capacitance (Coss)**: Approx. 250pF
- **Gate capacitance (Crss)**: Approx. 80pF
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI technology
- **Switching losses**: Low, contributes to efficient switching
- **Model**: U5N50HA-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 950mΩ
- **Maximum drain current (ID)**: 5A
- **Maximum power loss (Pd)**: About 15W (the specific value depends on the working conditions)
- **Reverse recovery time (Trr)**: About 120ns
- **Input capacitance (Ciss)**: About 500pF
- **Output capacitance (Coss)**: Approx. 250pF
- **Gate capacitance (Crss)**: Approx. 80pF
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI technology
- **Switching losses**: Low, contributes to efficient switching
Domain and module applications：
**3. Application fields and module examples:**
**U5N50HA-VB** As a high-voltage and high-current carrying MOSFET, it has a wide range of applications. The following are its specific applications in different fields and modules:
# **1. Power conversion system**
**U5N50HA-VB** can be used in **DC-DC converters** and **AC-DC power modules**, especially in power conversion systems that require high voltage. Its high voltage resistance makes it more reliable in power supply systems and can handle large voltage fluctuations. At the same time, it improves the efficiency of the system and reduces energy loss through low RDS(ON).
# **6. Power electronic equipment**
Among other **power electronic equipment**, **U5N50HA-VB** can be used in high-voltage switches, voltage regulation modules and other applications that require high current transmission. It can provide efficient current switching control to ensure safe operation of equipment under high voltage and current conditions.
# **7. High-power switching applications**
This MOSFET is also very suitable for **high-power switching applications**, such as power switches, light regulators, and high-voltage control systems. Due to its high voltage resistance and low on-resistance, it is able to carry large current loads and provide efficient switching.
**Summary: **
**U5N50HA-VB** is suitable for a variety of power management systems and drive circuits with high voltage and current requirements, including electric drives, industrial controls, battery management systems, solar inverters, and other fields. Its **650V** high withstand voltage, low on-resistance, and stable switching performance make it an ideal choice for efficient power conversion and control systems.
**U5N50HA-VB** As a high-voltage and high-current carrying MOSFET, it has a wide range of applications. The following are its specific applications in different fields and modules:
# **1. Power conversion system**
**U5N50HA-VB** can be used in **DC-DC converters** and **AC-DC power modules**, especially in power conversion systems that require high voltage. Its high voltage resistance makes it more reliable in power supply systems and can handle large voltage fluctuations. At the same time, it improves the efficiency of the system and reduces energy loss through low RDS(ON).
# **6. Power electronic equipment**
Among other **power electronic equipment**, **U5N50HA-VB** can be used in high-voltage switches, voltage regulation modules and other applications that require high current transmission. It can provide efficient current switching control to ensure safe operation of equipment under high voltage and current conditions.
# **7. High-power switching applications**
This MOSFET is also very suitable for **high-power switching applications**, such as power switches, light regulators, and high-voltage control systems. Due to its high voltage resistance and low on-resistance, it is able to carry large current loads and provide efficient switching.
**Summary: **
**U5N50HA-VB** is suitable for a variety of power management systems and drive circuits with high voltage and current requirements, including electric drives, industrial controls, battery management systems, solar inverters, and other fields. Its **650V** high withstand voltage, low on-resistance, and stable switching performance make it an ideal choice for efficient power conversion and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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