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U2N80HA-VB Product details
Back to previous pageProduct introduction：
**1. Product Introduction: **
**U2N80HA-VB** is a **single N-Channel MOSFET** in **TO251** package. It has high voltage withstand capability, with a maximum drain-source voltage of **800V**, suitable for medium to high voltage applications. This MOSFET has **low on-resistance** (RDS(ON) is **2600mΩ** @ VGS=10V), can provide efficient current transmission, and is suitable for systems requiring higher voltage and current control. It adopts **SJ_Multi-EPI technology** to provide higher reliability and efficiency, and is suitable for use in industries such as industry, energy and automobiles.
**U2N80HA-VB** is a **single N-Channel MOSFET** in **TO251** package. It has high voltage withstand capability, with a maximum drain-source voltage of **800V**, suitable for medium to high voltage applications. This MOSFET has **low on-resistance** (RDS(ON) is **2600mΩ** @ VGS=10V), can provide efficient current transmission, and is suitable for systems requiring higher voltage and current control. It adopts **SJ_Multi-EPI technology** to provide higher reliability and efficiency, and is suitable for use in industries such as industry, energy and automobiles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**2. Detailed parameter description: **
- **Model**: U2N80HA-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 2600mΩ
- **Maximum drain current (ID)**: 2A
- **Maximum power loss (Pd)**: About 15W (the specific value depends on the working conditions)
- **Reverse recovery time (Trr)**: About 100ns
- **Input capacitance (Ciss)**: About 350pF
- **Output capacitance (Coss)**: Approx. 200pF
- **Gate capacitance (Crss)**: Approx. 60pF
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI technology
- **Model**: U2N80HA-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 2600mΩ
- **Maximum drain current (ID)**: 2A
- **Maximum power loss (Pd)**: About 15W (the specific value depends on the working conditions)
- **Reverse recovery time (Trr)**: About 100ns
- **Input capacitance (Ciss)**: About 350pF
- **Output capacitance (Coss)**: Approx. 200pF
- **Gate capacitance (Crss)**: Approx. 60pF
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI technology
Domain and module applications：
**U2N80HA-VB** is a MOSFET suitable for high-voltage applications and has a wide range of applications in multiple fields and modules. The following are its typical application areas:
#### **1. Power conversion system**
**U2N80HA-VB** can be applied to efficient **DC-DC converters** and **AC-DC power modules**. Its high withstand voltage and high current carrying capacity enable it to cope with complex switching operations in power systems, especially in industrial power supplies and high-voltage battery management systems. The low on-resistance of the MOSFET also helps to improve conversion efficiency and reduce energy loss.
#### **2. Electric drive system**
This MOSFET is also suitable for **electric drive systems**, such as power tools, electric vehicles, and battery management systems and motor drive circuits in electric vehicles. Due to its high withstand voltage and current carrying capacity, it can effectively control high-power currents and ensure the stable operation of electric drive systems.
#### **3. Industrial Power Management
In the field of industrial automation and robotics, the U2N80HA-VB is an ideal choice for motor control systems and power modules. It can withstand high voltage fluctuations, ensuring that the system can still work stably under high voltage. At the same time, the low on-resistance helps reduce heat generation and improve system reliability.
#### **4. Solar Inverter
In the field of renewable energy, especially in solar inverters, the U2N80HA-VB can handle high voltage and convert electrical energy efficiently. Its high voltage resistance enables it to work stably in solar power generation systems, ensuring the reliability and efficiency of the system under extreme conditions.
#### **5. Automotive Power System
The U2N80HA-VB is also suitable for automotive electronic systems, especially in on-board power management systems, for power conversion and voltage regulation. Because it can withstand high voltage, it can be used in applications such as automotive battery charging systems, LED lighting control and power management.
#### **6. UPS (Uninterruptible Power Supply) System**
In **UPS systems**, **U2N80HA-VB** can be used as a power conversion and current control switch to ensure the stability and safety of the power supply. Its high voltage tolerance and low on-resistance can effectively reduce energy loss and extend the working life of the UPS.
In summary, **U2N80HA-VB** is suitable for various high-voltage power management and conversion systems, especially in the fields of power, automobiles, renewable energy and industrial automation, and can provide stable and efficient current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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