U26NM50-VB Product details
Product introduction:
**U26NM50-VB** is a high-performance unipolar N-type MOSFET in **TO220F** package, designed for high voltage and high current applications. Its maximum drain-source voltage (V_DS) is **500V**, and its maximum drain current (I_D) is **30A**. It can withstand continuous currents up to **30A** and is suitable for power electronics, power switches, inverters, power management and other fields. This MOSFET has a turn-on voltage (V_th) of **3.5V**, and its on-resistance **R_DS(ON)** is **140mΩ** when **V_GS = 10V**, which provides good efficiency and low power consumption in current control and high power switching applications.
Using **SJ_Multi-EPI** technology, U26NM50-VB has low conduction losses and excellent switching characteristics, suitable for efficient power management solutions. It is widely used in high-power power supplies, electric vehicle battery management systems, inverters and other scenarios that require high voltage and high current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 500V
- **Gate-source voltage (V_GS)**: ±30V
- **Turning voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 140mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 30A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
**U26NM50-VB** is suitable for multiple high-efficiency power control fields due to its high current, high voltage tolerance and low on-resistance. The following are its typical application examples:
1. **Power conversion and management**:
- U26NM50-VB can be widely used in **DC-DC converters** and **AC-DC power supplies**, such as power adapters, chargers, power modules, etc. It can provide efficient switching performance under high voltage and high current conditions to ensure stable operation of the power system, improve conversion efficiency and reduce energy loss.
2. **Inverter and electric vehicle (EV) drive**:
- In **inverters** and **electric vehicle battery management systems (BMS)**, the high voltage and high current characteristics of U26NM50-VB make it an ideal choice for power conversion and battery management. It can provide efficient and low-loss operation when converting DC power to AC power (such as used in solar inverters).
3. **Power amplifier and industrial power supply**:
- In **industrial power supply** and **power amplifier** systems, U26NM50-VB provides efficient current control, can withstand high current load requirements, and ensure stable operation of the equipment in high current scenarios.
4. **Switching power supply module and high power drive**:
- Used in high-power **switching power supply module** and drive applications, such as servo motor drive and various switch modules in power systems. The low on-resistance of U26NM50-VB can effectively reduce heat loss and improve system reliability.
5. **Battery management and battery protection circuit**:
- In **battery management system (BMS)**, U26NM50-VB, as a switching element, can efficiently control the battery charging and discharging process, avoid overcurrent or short circuit, and ensure the safety and long-term use of the battery.
In summary, U26NM50-VB is a high-performance MOSFET that integrates high voltage, high current and low power consumption. It is suitable for various applications that require high-efficiency current control and is widely used in power management, inverters, electric vehicle drives, industrial power supplies and other fields.
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