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U13P10ZA-VB Product details

Product introduction:

Product Introduction:
**U13P10ZA-VB** is a high-performance P-Channel MOSFET in TO252 package with good thermal stability and efficient current control capability. The maximum drain-source voltage (V_DS) of this MOSFET is -100V, which can adapt to high-voltage application environments. Its gate-source voltage range is ±20V, which is suitable for operation under a variety of different voltage conditions. Its threshold voltage (V_th) is -2V, which means it can be turned on quickly at a lower gate voltage. This model of MOSFET also has a lower on-resistance (R_DS(ON)), which is 120mΩ at V_GS = 4.5V and 100mΩ at V_GS = 10V, respectively, providing lower power consumption and higher efficiency. The maximum drain current of this device is -16A, which is suitable for high current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -100V -2V -16A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -100V -2V -16A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -100V -2V -16A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description:
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **V_DS (drain-source voltage)**: -100V
- **V_GS (gate-source voltage)**: ±20V
- **V_th (threshold voltage)**: -2V
- **R_DS(ON) (on-resistance)**:
- 120mΩ@V_GS = 4.5V
- 100mΩ@V_GS = 10V
- **I_D (maximum drain current)**: -16A
- **Technology**: Trench
- **Application**: High-efficiency switching power supplies, power tools, industrial control, etc.

Domain and module applications:

Applicable fields and modules:
- **Power tools**: Due to its high current carrying capacity and low on-resistance, the U13P10ZA-VB is very suitable for use in the power regulation circuit of power tools, providing efficient current transmission.
- **Power management system**: This MOSFET can be widely used in switching power supplies (SMPS) and battery management systems, especially in application scenarios requiring efficient energy conversion and low power consumption.
- **Electric drive module**: Suitable for electric drive systems, especially efficient motor control and drive modules, the U13P10ZA-VB provides low conduction losses and stable operating performance.
- **DC-DC converter**: Due to its low on-resistance, the device can effectively improve the efficiency of DC-DC converters and is widely used in power conversion modules of industrial automation and consumer electronic devices.
- **Power amplifier**: Used in efficient power amplifier circuits, especially in audio or communication systems, it can effectively reduce energy loss and improve operating performance.

From these application examples, we can see that U13P10ZA-VB is a high-performance, high-efficiency P-Channel MOSFET, suitable for use in various high-efficiency power management and control systems, especially in situations where large currents need to be carried.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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