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TSU2N60M-VB Product details
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1. **Product Introduction - TSU2N60M-VB (TO251)**
TSU2N60M-VB is a high performance N-Channel MOSFET in TO251 package, designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 650V. It has a wide gate drive voltage range (V_GS = ±30V) and a gate threshold voltage (V_th) of 3.5V, suitable for power management systems that require stable and high efficiency. The maximum drain current (I_D) of this MOSFET is 2A, and the on-resistance (R_DS(ON)) is 4300mΩ (at V_GS = 10V).
TSU2N60M-VB adopts Plannar technology, with low switching loss and stable high temperature performance, and is widely used in power management systems that require high voltage and low on-resistance. Its reliable performance and high voltage resistance make it very suitable for high power conversion, motor control, battery management and other fields.
TSU2N60M-VB is a high performance N-Channel MOSFET in TO251 package, designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 650V. It has a wide gate drive voltage range (V_GS = ±30V) and a gate threshold voltage (V_th) of 3.5V, suitable for power management systems that require stable and high efficiency. The maximum drain current (I_D) of this MOSFET is 2A, and the on-resistance (R_DS(ON)) is 4300mΩ (at V_GS = 10V).
TSU2N60M-VB adopts Plannar technology, with low switching loss and stable high temperature performance, and is widely used in power management systems that require high voltage and low on-resistance. Its reliable performance and high voltage resistance make it very suitable for high power conversion, motor control, battery management and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description**
- **Model**: TSU2N60M-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate drive voltage (V_GS)**: ±30V
- **Gate threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 4300mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 2A
- **Maximum power dissipation (P_D)**: 50W
- **Maximum junction temperature (T_j)**: 150°C
- **Reverse leakage current (I_DSS)**: ≤ 10µA @ V_DS = 650V
- **Switching Characteristics**:
- Turn-on delay time (t_d(on)): 30ns
- Turn-off delay time (t_d(off)): 50ns
- **Thermal resistance (RthJC)**: 1.5°C/W
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Junction temperature range**: -55°C to +150°C
- **Electrical Performance**:
- Input capacitance (C_iss): 100pF (typ.)
- Output capacitance (C_oss): 35pF (typ.)
- **Model**: TSU2N60M-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate drive voltage (V_GS)**: ±30V
- **Gate threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 4300mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 2A
- **Maximum power dissipation (P_D)**: 50W
- **Maximum junction temperature (T_j)**: 150°C
- **Reverse leakage current (I_DSS)**: ≤ 10µA @ V_DS = 650V
- **Switching Characteristics**:
- Turn-on delay time (t_d(on)): 30ns
- Turn-off delay time (t_d(off)): 50ns
- **Thermal resistance (RthJC)**: 1.5°C/W
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Junction temperature range**: -55°C to +150°C
- **Electrical Performance**:
- Input capacitance (C_iss): 100pF (typ.)
- Output capacitance (C_oss): 35pF (typ.)
Domain and module applications：
3. **Application Fields and Module Examples**
# **High Voltage Power Management & Power Conversion**
TSU2N60M-VB is suitable for high voltage power management and power conversion applications. With a maximum drain-source voltage of 650V, it can withstand higher voltages and is commonly used in high power supplies, DC-DC converters, AC-DC power adapters, etc. It can effectively handle high voltage and current flow in power conversion. Due to its low on-resistance, it can maximize the conversion efficiency of the power supply and reduce energy loss, thereby improving the efficiency and stability of the entire system.
# **Smart Grids & Power Transmission**
In smart grids and power transmission systems, TSU2N60M-VB, as a switching element, can operate stably in a high voltage environment and support the dispatching and distribution of power. Its high voltage resistance and high efficiency make it play a vital role in smart grids, especially in the remote transmission and control of electricity, which can effectively manage the flow of electric energy and reduce transmission losses.
Summary
TSU2N60M-VB is a high-performance N-Channel MOSFET suitable for high voltage (650V) and medium current (2A) applications. Its low on-resistance and stable switching characteristics make it widely used in power management, motor control, battery management, solar inverters and other fields. Whether it is a power conversion system that requires high voltage processing, or power tools and home appliances with strict requirements on current and efficiency, TSU2N60M-VB can provide excellent performance to ensure stable and efficient operation of the system.
# **High Voltage Power Management & Power Conversion**
TSU2N60M-VB is suitable for high voltage power management and power conversion applications. With a maximum drain-source voltage of 650V, it can withstand higher voltages and is commonly used in high power supplies, DC-DC converters, AC-DC power adapters, etc. It can effectively handle high voltage and current flow in power conversion. Due to its low on-resistance, it can maximize the conversion efficiency of the power supply and reduce energy loss, thereby improving the efficiency and stability of the entire system.
# **Smart Grids & Power Transmission**
In smart grids and power transmission systems, TSU2N60M-VB, as a switching element, can operate stably in a high voltage environment and support the dispatching and distribution of power. Its high voltage resistance and high efficiency make it play a vital role in smart grids, especially in the remote transmission and control of electricity, which can effectively manage the flow of electric energy and reduce transmission losses.
Summary
TSU2N60M-VB is a high-performance N-Channel MOSFET suitable for high voltage (650V) and medium current (2A) applications. Its low on-resistance and stable switching characteristics make it widely used in power management, motor control, battery management, solar inverters and other fields. Whether it is a power conversion system that requires high voltage processing, or power tools and home appliances with strict requirements on current and efficiency, TSU2N60M-VB can provide excellent performance to ensure stable and efficient operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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