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TSU1N60-VB Product details
Back to previous pageProduct introduction：
**1. Product Introduction: **
**TSU1N60-VB** is a high-voltage **single N-Channel MOSFET**, which adopts **TO251 package** and is designed for high-voltage power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 650V and is suitable for most high-voltage power management systems. **TSU1N60-VB** uses **Plannar technology**, and its maximum drain current (ID) is 2A, which is suitable for medium to high power applications.
The gate threshold voltage (Vth) of this MOSFET is 3.5V, which can operate at a medium gate-source voltage and has a low on-resistance (RDS(ON)), which is 4300mΩ at VGS=10V, and can provide good conductivity and low loss characteristics. Its excellent characteristics make it very suitable for applications such as high-voltage switching, power conversion, and power management.
**TSU1N60-VB** is a high-voltage **single N-Channel MOSFET**, which adopts **TO251 package** and is designed for high-voltage power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 650V and is suitable for most high-voltage power management systems. **TSU1N60-VB** uses **Plannar technology**, and its maximum drain current (ID) is 2A, which is suitable for medium to high power applications.
The gate threshold voltage (Vth) of this MOSFET is 3.5V, which can operate at a medium gate-source voltage and has a low on-resistance (RDS(ON)), which is 4300mΩ at VGS=10V, and can provide good conductivity and low loss characteristics. Its excellent characteristics make it very suitable for applications such as high-voltage switching, power conversion, and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**2. Detailed parameter description: **
- **Model**: TSU1N60-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 4300mΩ
- **Maximum drain current (ID)**: 2A
- **Maximum power loss (Pd)**: 20W
- **Input capacitance (Ciss)**: About 30pF
- **Output capacitance (Coss)**: About 25pF
- **Reverse recovery time (Trr)**: About 250ns
- **Operating temperature range**: -55°C to +150°C
- **Switching times**:
- Turn-on time (ton): approx. 110ns
- Turn-off time (toff): approx. 150ns
- **Technology type**: Plannar technology
- **Reverse leakage current (IR)**: <1µA @ VDS = 650V
- **Model**: TSU1N60-VB
- **Package type**: TO251
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 4300mΩ
- **Maximum drain current (ID)**: 2A
- **Maximum power loss (Pd)**: 20W
- **Input capacitance (Ciss)**: About 30pF
- **Output capacitance (Coss)**: About 25pF
- **Reverse recovery time (Trr)**: About 250ns
- **Operating temperature range**: -55°C to +150°C
- **Switching times**:
- Turn-on time (ton): approx. 110ns
- Turn-off time (toff): approx. 150ns
- **Technology type**: Plannar technology
- **Reverse leakage current (IR)**: <1µA @ VDS = 650V
Domain and module applications：
**3. Application fields and module examples: **
**TSU1N60-VB** is a high voltage MOSFET that is widely used in various medium and high voltage switching power supplies and power management systems. The following are typical application fields of this product:
# **1. Power conversion and power management**
Due to its 650V withstand voltage capability, **TSU1N60-VB** can be widely used in **power converters** (such as AC-DC, DC-DC converters) and **power management systems**. It can efficiently control large currents, and its low on-resistance ensures good efficiency. In power adapters, industrial power supplies, and UPS systems, etc., it helps to achieve stable and efficient power conversion.
# **6. Overvoltage protection circuit**
This MOSFET can also be used as a protection element in the **overvoltage protection circuit** to help limit the operating voltage of the circuit. When the voltage exceeds the set value, the MOSFET can quickly shut off the current flow to prevent circuit damage, which is particularly suitable for high voltage sensitive devices and systems.
# **7. Automotive electronics and charging systems**
In **automotive electronics systems**, especially **electric vehicle charging systems**, **TSU1N60-VB** can also be used as a power switch. It can stably control the charging process of electric vehicle batteries and can withstand high voltages to ensure the stability and efficiency of the charging system.
# **8. High-voltage switch control**
Due to its high voltage withstand capability of up to 650V, **TSU1N60-VB** can also be applied to various **high-voltage switch control systems**. For example, power switching, speed control and power distribution in industrial equipment. The switching characteristics of this MOSFET ensure the reliability and efficiency of the system.
**Summary: **
**TSU1N60-VB** is a **single N-Channel MOSFET** with a high voltage withstand capability of 650V, a maximum drain current of 2A, and **Plannar technology**, suitable for high-voltage switching and power management applications. It is widely used in power conversion, switching power supply, solar inverter, motor drive, battery management system and other fields. Its low on-resistance and excellent switching performance make it very valuable in high-efficiency power management system.
**TSU1N60-VB** is a high voltage MOSFET that is widely used in various medium and high voltage switching power supplies and power management systems. The following are typical application fields of this product:
# **1. Power conversion and power management**
Due to its 650V withstand voltage capability, **TSU1N60-VB** can be widely used in **power converters** (such as AC-DC, DC-DC converters) and **power management systems**. It can efficiently control large currents, and its low on-resistance ensures good efficiency. In power adapters, industrial power supplies, and UPS systems, etc., it helps to achieve stable and efficient power conversion.
# **6. Overvoltage protection circuit**
This MOSFET can also be used as a protection element in the **overvoltage protection circuit** to help limit the operating voltage of the circuit. When the voltage exceeds the set value, the MOSFET can quickly shut off the current flow to prevent circuit damage, which is particularly suitable for high voltage sensitive devices and systems.
# **7. Automotive electronics and charging systems**
In **automotive electronics systems**, especially **electric vehicle charging systems**, **TSU1N60-VB** can also be used as a power switch. It can stably control the charging process of electric vehicle batteries and can withstand high voltages to ensure the stability and efficiency of the charging system.
# **8. High-voltage switch control**
Due to its high voltage withstand capability of up to 650V, **TSU1N60-VB** can also be applied to various **high-voltage switch control systems**. For example, power switching, speed control and power distribution in industrial equipment. The switching characteristics of this MOSFET ensure the reliability and efficiency of the system.
**Summary: **
**TSU1N60-VB** is a **single N-Channel MOSFET** with a high voltage withstand capability of 650V, a maximum drain current of 2A, and **Plannar technology**, suitable for high-voltage switching and power management applications. It is widely used in power conversion, switching power supply, solar inverter, motor drive, battery management system and other fields. Its low on-resistance and excellent switching performance make it very valuable in high-efficiency power management system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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