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TSM9N50CIC0-VB Product details

Product introduction:

Product Introduction

**TSM9N50CIC0-VB** is a high-voltage, low on-resistance unipolar N-type MOSFET in a **TO220** package with a **500V** drain-source voltage (V_DS) and a **13A** maximum drain current (I_D). This MOSFET uses **Plannar technology** and has excellent current control performance. It is suitable for power management, power conversion and industrial drive applications that require high voltage and high reliability. Its **660mΩ** on-resistance (R_DS(ON) @ V_GS = 10V) enables the component to have lower power loss in high voltage environments and can provide stable switching performance. It is widely used in industry, automobiles and power equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 500V 3.1V 13A 660mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (V_DS)**: 500V
- **Gate-Source Voltage (V_GS)**: ±30V
- **Throughput (V_th)**: 3.1V
- **On-resistance (R_DS(ON))**:
- **660mΩ** @ V_GS = 10V
- **Maximum Drain Current (I_D)**: 13A
- **Technology**: Plannar
- **Maximum Power Dissipation**: 125W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Switching Frequency**: Suitable for low to medium frequency switching applications

Domain and module applications:

Application fields and module examples

1. **Power management and power conversion system**
TSM9N50CIC0-VB performs well in **power management systems**, especially for **DC-DC converters** and **AC-DC converters**. Its 500V drain-source voltage makes it suitable for higher voltage working environments, while **660mΩ** on-resistance ensures lower power loss in high current applications. Applied to power conversion equipment, it can improve system efficiency, reduce heat loss, and is suitable for use as a switching element in power electronic equipment.

2. **Motor drive system**
In **motor drive systems**, TSM9N50CIC0-VB can effectively control current under high voltage, and is particularly suitable for use as a power switch in motor drives. It can be used in **inverters**, **servo motor drives** and other industrial automation equipment to provide efficient current switching capabilities. In high-voltage drive systems, it helps optimize motor performance and improve the response speed and efficiency of the entire system.

3. **Industrial Automation and Control Systems**
This MOSFET is suitable for use in **industrial automation control systems**, such as power switches for PLCs (Programmable Logic Controllers) and other control systems. In these systems, the TSM9N50CIC0-VB can stably control high voltage currents to ensure safe and stable operation of the system. It is particularly suitable for high-load switching operations, helping devices improve accuracy and response speed.

4. **Automotive Electronics and Battery Management Systems**
In the **Battery Management System (BMS)** of **Electric Vehicles (EVs)** and **Hybrid Electric Vehicles (HEVs), the TSM9N50CIC0-VB can stably control the battery charging and discharging process and adapt to high voltage environments. Its low on-resistance (660mΩ) can reduce power loss, improve system efficiency, and ensure that the battery operates at a safe current.

5. **High-voltage power conversion applications**
Due to its **500V** withstand voltage capability, this MOSFET is very suitable for **power electronic systems**, such as **inverters**, **high-voltage power converters**, **power conditioners**, etc. In these fields, it can withstand large currents and high voltages while ensuring that the system has high efficiency and low energy loss during the conversion process.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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