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TSM9N50CI CO-VB Product details
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1. Product Introduction
**TSM9N50CI CO-VB** is a **single N-type MOSFET** in **TO220F** package, designed for high voltage applications. The drain-source voltage (VDS) of this model is **650V**, the gate-source voltage (VGS) is **±30V**, and the gate threshold voltage (Vth) is **3.5V**. Its on-resistance is **RDS(ON) = 830mΩ @ VGS = 10V**, the maximum drain current (ID) is **10A**, and it is manufactured using **Plannar** technology, with good high voltage resistance and low switching loss characteristics. TSM9N50CI CO-VB is widely used in power management, high power conversion, and industrial drives.
The high voltage resistance characteristics of this MOSFET enable it to provide excellent performance in various power electronic systems, especially for applications that require higher voltage carrying capacity and low conduction loss.
**TSM9N50CI CO-VB** is a **single N-type MOSFET** in **TO220F** package, designed for high voltage applications. The drain-source voltage (VDS) of this model is **650V**, the gate-source voltage (VGS) is **±30V**, and the gate threshold voltage (Vth) is **3.5V**. Its on-resistance is **RDS(ON) = 830mΩ @ VGS = 10V**, the maximum drain current (ID) is **10A**, and it is manufactured using **Plannar** technology, with good high voltage resistance and low switching loss characteristics. TSM9N50CI CO-VB is widely used in power management, high power conversion, and industrial drives.
The high voltage resistance characteristics of this MOSFET enable it to provide excellent performance in various power electronic systems, especially for applications that require higher voltage carrying capacity and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Model**: TSM9N50CI CO-VB
- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power loss**: 50W
- **Reverse recovery time**: 50ns (typical)
- **Maximum reverse leakage current**: 1μA @ VDS = 650V
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Plannar
- **Maximum thermal resistance (Junction to Case)**: 3°C/W
- **Switching time**: Fast switching characteristics, suitable for high-speed applications
- **Maximum current slope (di/dt)**: 150A/μs
- **Model**: TSM9N50CI CO-VB
- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power loss**: 50W
- **Reverse recovery time**: 50ns (typical)
- **Maximum reverse leakage current**: 1μA @ VDS = 650V
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Plannar
- **Maximum thermal resistance (Junction to Case)**: 3°C/W
- **Switching time**: Fast switching characteristics, suitable for high-speed applications
- **Maximum current slope (di/dt)**: 150A/μs
Domain and module applications：
3. Application fields and module examples
**1. Power management and power conversion systems**
Due to the high withstand voltage (650V) and low on-resistance of the TSM9N50CI CO-VB, it is very suitable for use in **AC-DC power adapters** and **DC-DC converters**. In these systems, MOSFETs, as switching elements, help achieve efficient power conversion and current regulation, reduce switching losses, and improve overall system efficiency.
For example, in **industrial power equipment** and **high-efficiency power adapters**, the TSM9N50CI CO-VB can be used as a power switch to withstand higher input voltages and efficiently convert electrical energy, meeting the system's needs for efficient power conversion.
**2. Motor drives and inverters**
In **industrial drive** systems, the TSM9N50CI CO-VB can be used as a switching element in **inverters**. Inverters are usually required to operate at high voltages and regulate the speed and torque of motors. The high voltage tolerance and low on-resistance characteristics of this MOSFET enable it to operate with lower energy losses in these high current, high voltage situations and improve the efficiency of the system.
For example, in **power tools**, **HVAC systems (heating, ventilation and air conditioning systems)** and **industrial robots**, the TSM9N50CI CO-VB can be used to regulate motor operation and ensure smooth and efficient control.
**3. Inverter and renewable energy applications**
Due to its good switching characteristics and high voltage tolerance, the TSM9N50CI CO-VB is very suitable for renewable energy applications such as **solar inverters** and **wind power generation systems**. In these applications, MOSFETs are used to convert DC to AC and can withstand high voltages without losses, thereby improving the efficiency of energy conversion.
For example, in **solar power generation systems**, the TSM9N50CI CO-VB can be used as a switching element in solar inverters to ensure efficient power conversion and grid connection.
**4. Battery Management System (BMS)
TSM9N50CI CO-VB is also suitable for **Battery Management System (BMS)**, especially in **Electric Vehicles (EV)** and **Energy Storage Systems**. This MOSFET can be used to manage and control the battery charging and discharging process, and ensure the stability and efficiency of the system operation.
For example, in **Electric Vehicle Battery Systems**, TSM9N50CI CO-VB can accurately control the battery charging and discharging process, provide safety protection for the battery, and ensure the long-term stability of battery performance.
**5. High-Frequency Power Supply and Communication Systems**
Due to its fast switching characteristics, TSM9N50CI CO-VB is suitable for **High-Frequency Power Supply** and **Radio Frequency (RF) Power Amplifiers**. In these applications, MOSFET can be used for switching and power regulation of high-frequency signals to ensure the stability and low loss of signal transmission.
For example, in **RF communication equipment**, TSM9N50CI CO-VB can be used as a switching element to help effectively amplify signals and reduce power loss, ensuring efficient operation of communication equipment.
**1. Power management and power conversion systems**
Due to the high withstand voltage (650V) and low on-resistance of the TSM9N50CI CO-VB, it is very suitable for use in **AC-DC power adapters** and **DC-DC converters**. In these systems, MOSFETs, as switching elements, help achieve efficient power conversion and current regulation, reduce switching losses, and improve overall system efficiency.
For example, in **industrial power equipment** and **high-efficiency power adapters**, the TSM9N50CI CO-VB can be used as a power switch to withstand higher input voltages and efficiently convert electrical energy, meeting the system's needs for efficient power conversion.
**2. Motor drives and inverters**
In **industrial drive** systems, the TSM9N50CI CO-VB can be used as a switching element in **inverters**. Inverters are usually required to operate at high voltages and regulate the speed and torque of motors. The high voltage tolerance and low on-resistance characteristics of this MOSFET enable it to operate with lower energy losses in these high current, high voltage situations and improve the efficiency of the system.
For example, in **power tools**, **HVAC systems (heating, ventilation and air conditioning systems)** and **industrial robots**, the TSM9N50CI CO-VB can be used to regulate motor operation and ensure smooth and efficient control.
**3. Inverter and renewable energy applications**
Due to its good switching characteristics and high voltage tolerance, the TSM9N50CI CO-VB is very suitable for renewable energy applications such as **solar inverters** and **wind power generation systems**. In these applications, MOSFETs are used to convert DC to AC and can withstand high voltages without losses, thereby improving the efficiency of energy conversion.
For example, in **solar power generation systems**, the TSM9N50CI CO-VB can be used as a switching element in solar inverters to ensure efficient power conversion and grid connection.
**4. Battery Management System (BMS)
TSM9N50CI CO-VB is also suitable for **Battery Management System (BMS)**, especially in **Electric Vehicles (EV)** and **Energy Storage Systems**. This MOSFET can be used to manage and control the battery charging and discharging process, and ensure the stability and efficiency of the system operation.
For example, in **Electric Vehicle Battery Systems**, TSM9N50CI CO-VB can accurately control the battery charging and discharging process, provide safety protection for the battery, and ensure the long-term stability of battery performance.
**5. High-Frequency Power Supply and Communication Systems**
Due to its fast switching characteristics, TSM9N50CI CO-VB is suitable for **High-Frequency Power Supply** and **Radio Frequency (RF) Power Amplifiers**. In these applications, MOSFET can be used for switching and power regulation of high-frequency signals to ensure the stability and low loss of signal transmission.
For example, in **RF communication equipment**, TSM9N50CI CO-VB can be used as a switching element to help effectively amplify signals and reduce power loss, ensuring efficient operation of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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