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TSM8N80CI C0-VB Product details
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1. Product Introduction
**TSM8N80CI C0-VB** is a single N-type MOSFET in a **TO220F** package, designed for high voltage, high power applications. The drain-source voltage (VDS) of this model is **850V**, the gate-source voltage (VGS) is **±30V**, the gate threshold voltage (Vth) is **3.3V**, its on-resistance **RDS(ON) = 1150mΩ @ VGS = 10V**, and the maximum drain current **ID = 10A**. TSM8N80CI C0-VB adopts **Plannar** technology, with good high voltage tolerance and low loss characteristics, suitable for high-demand fields such as high voltage power management, industrial drive and power conversion.
The high voltage withstand capability of this product makes it excellent in various power electronic systems, especially in applications requiring high switching efficiency and low loss, TSM8N80CI C0-VB is an ideal solution. It is widely used in many fields such as frequency converters, power adapters, inverters and electric vehicle battery management systems (BMS).
**TSM8N80CI C0-VB** is a single N-type MOSFET in a **TO220F** package, designed for high voltage, high power applications. The drain-source voltage (VDS) of this model is **850V**, the gate-source voltage (VGS) is **±30V**, the gate threshold voltage (Vth) is **3.3V**, its on-resistance **RDS(ON) = 1150mΩ @ VGS = 10V**, and the maximum drain current **ID = 10A**. TSM8N80CI C0-VB adopts **Plannar** technology, with good high voltage tolerance and low loss characteristics, suitable for high-demand fields such as high voltage power management, industrial drive and power conversion.
The high voltage withstand capability of this product makes it excellent in various power electronic systems, especially in applications requiring high switching efficiency and low loss, TSM8N80CI C0-VB is an ideal solution. It is widely used in many fields such as frequency converters, power adapters, inverters and electric vehicle battery management systems (BMS).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Model**: TSM8N80CI C0-VB
- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power loss**: 50W (depending on operating conditions)
- **Reverse recovery time**: 30ns (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Plannar
- **Maximum reverse leakage current**: 1μA @ VDS = 850V
- **Junction temperature (Tj)**: +150°C
- **Maximum current slope (di/dt)**: 300A/μs
- **Maximum thermal resistance (Junction to Case)**: 3°C/W
- **Switching time**: Fast switching characteristics, suitable for high-speed applications
- **Model**: TSM8N80CI C0-VB
- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power loss**: 50W (depending on operating conditions)
- **Reverse recovery time**: 30ns (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Plannar
- **Maximum reverse leakage current**: 1μA @ VDS = 850V
- **Junction temperature (Tj)**: +150°C
- **Maximum current slope (di/dt)**: 300A/μs
- **Maximum thermal resistance (Junction to Case)**: 3°C/W
- **Switching time**: Fast switching characteristics, suitable for high-speed applications
Domain and module applications：
3. Application fields and module examples
**1. Power conversion applications**
TSM8N80CI C0-VB's **850V** high drain-source voltage and **10A** maximum drain current make it an ideal choice for **AC-DC power converters** and **DC-DC converters**. In these applications, its high voltage tolerance and low on-resistance help improve power conversion efficiency and reduce power losses.
For example, in **high-voltage power adapters**, TSM8N80CI C0-VB as a switching element can effectively control current while ensuring the stability of the power supply and long-term efficient operation.
**2. Industrial drive and motor control**
TSM8N80CI C0-VB's high voltage carrying capacity makes it very suitable for power management modules in **inverters** and **motor drives**. In these systems, MOSFETs are used to regulate current and control motor operation to ensure smooth operation and high efficiency of the motor.
For example, in **power tools** and **industrial robots**, TSM8N80CI C0-VB can be used as a power switch to control motor start, stop and speed regulation to improve the accuracy and efficiency of mechanical control systems.
**3. Inverter and renewable energy system**
TSM8N80CI C0-VB is also important in **solar inverter** and **wind power generation system**. Due to its high voltage resistance and fast switching characteristics, TSM8N80CI C0-VB can efficiently convert solar or wind energy into electrical energy and ensure the stable operation of the system.
For example, in **photovoltaic power generation system**, TSM8N80CI C0-VB can be used in the inverter to undertake power conversion tasks, converting DC power into AC power and achieving efficient power transmission.
**4. Electric Vehicles and Battery Management Systems (BMS)**
In **electric vehicles**, the TSM8N80CI C0-VB can be used in **battery management systems (BMS)** to achieve precise control of battery charging and discharging. Due to its high voltage tolerance and high conductivity, the TSM8N80CI C0-VB can provide reliable current control during the charging and discharging process of electric vehicle batteries and ensure battery safety and long life.
In **fast charging stations**, the TSM8N80CI C0-VB can be used as a power switch to ensure high efficiency of fast charging and stable battery status.
**5. High-frequency power supply and power amplifier applications**
The TSM8N80CI C0-VB is also used in **RF power amplifiers** and **high-frequency power supplies**, especially in areas that require high voltage and fast switching characteristics. Due to its low on-resistance and excellent switching characteristics, it can effectively control power flow and reduce switching losses.
For example, in **RF communication equipment**, TSM8N80CI C0-VB can be used for signal amplification and power regulation to ensure stable transmission of high-frequency signals.
**1. Power conversion applications**
TSM8N80CI C0-VB's **850V** high drain-source voltage and **10A** maximum drain current make it an ideal choice for **AC-DC power converters** and **DC-DC converters**. In these applications, its high voltage tolerance and low on-resistance help improve power conversion efficiency and reduce power losses.
For example, in **high-voltage power adapters**, TSM8N80CI C0-VB as a switching element can effectively control current while ensuring the stability of the power supply and long-term efficient operation.
**2. Industrial drive and motor control**
TSM8N80CI C0-VB's high voltage carrying capacity makes it very suitable for power management modules in **inverters** and **motor drives**. In these systems, MOSFETs are used to regulate current and control motor operation to ensure smooth operation and high efficiency of the motor.
For example, in **power tools** and **industrial robots**, TSM8N80CI C0-VB can be used as a power switch to control motor start, stop and speed regulation to improve the accuracy and efficiency of mechanical control systems.
**3. Inverter and renewable energy system**
TSM8N80CI C0-VB is also important in **solar inverter** and **wind power generation system**. Due to its high voltage resistance and fast switching characteristics, TSM8N80CI C0-VB can efficiently convert solar or wind energy into electrical energy and ensure the stable operation of the system.
For example, in **photovoltaic power generation system**, TSM8N80CI C0-VB can be used in the inverter to undertake power conversion tasks, converting DC power into AC power and achieving efficient power transmission.
**4. Electric Vehicles and Battery Management Systems (BMS)**
In **electric vehicles**, the TSM8N80CI C0-VB can be used in **battery management systems (BMS)** to achieve precise control of battery charging and discharging. Due to its high voltage tolerance and high conductivity, the TSM8N80CI C0-VB can provide reliable current control during the charging and discharging process of electric vehicle batteries and ensure battery safety and long life.
In **fast charging stations**, the TSM8N80CI C0-VB can be used as a power switch to ensure high efficiency of fast charging and stable battery status.
**5. High-frequency power supply and power amplifier applications**
The TSM8N80CI C0-VB is also used in **RF power amplifiers** and **high-frequency power supplies**, especially in areas that require high voltage and fast switching characteristics. Due to its low on-resistance and excellent switching characteristics, it can effectively control power flow and reduce switching losses.
For example, in **RF communication equipment**, TSM8N80CI C0-VB can be used for signal amplification and power regulation to ensure stable transmission of high-frequency signals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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