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TSM8N50CPROG-VB Product details
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1. **Product Introduction - TSM8N50CPROG-VB (TO252)**
TSM8N50CPROG-VB is a single N-Channel power MOSFET in TO252 package, designed for high voltage and high current switch control. This product adopts SJ_Multi-EPI technology, has low on-resistance (R_DS(ON)) and good thermal performance, suitable for high voltage applications of 650V, and the maximum drain current (I_D) is 7A. Its gate drive voltage (V_GS) is ±30V and the gate threshold voltage (V_th) is 3.5V. This MOSFET exhibits a low on-resistance (700mΩ) at a gate drive voltage of 10V, which can efficiently control the current and play an important role in applications such as efficient power management, current switching, and motor drive.
TSM8N50CPROG-VB provides excellent switching performance and voltage resistance characteristics, suitable for multiple fields such as industry, power electronics, LED driving, power conversion, etc. Its TO252 package has the advantages of small size and good heat dissipation, and can adapt to high temperature and high load working environment.
TSM8N50CPROG-VB is a single N-Channel power MOSFET in TO252 package, designed for high voltage and high current switch control. This product adopts SJ_Multi-EPI technology, has low on-resistance (R_DS(ON)) and good thermal performance, suitable for high voltage applications of 650V, and the maximum drain current (I_D) is 7A. Its gate drive voltage (V_GS) is ±30V and the gate threshold voltage (V_th) is 3.5V. This MOSFET exhibits a low on-resistance (700mΩ) at a gate drive voltage of 10V, which can efficiently control the current and play an important role in applications such as efficient power management, current switching, and motor drive.
TSM8N50CPROG-VB provides excellent switching performance and voltage resistance characteristics, suitable for multiple fields such as industry, power electronics, LED driving, power conversion, etc. Its TO252 package has the advantages of small size and good heat dissipation, and can adapt to high temperature and high load working environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description**
- **Model**: TSM8N50CPROG-VB
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain to source voltage (V_DS)**: 650V
- **Gate drive voltage (V_GS)**: ±30V
- **Gate threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 700mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 7A
- **Maximum power dissipation (P_D)**: 50W
- **Maximum junction temperature**: +150°C
- **Technology type**: SJ_Multi-EPI
- **Switching Characteristics**:
- Turn-on delay time (t_d(on)): 15ns
- Turn-off delay time (t_d(off)): 18ns
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Thermal resistance (RthJC)**: 3.6°C/W (typical)
- **Junction temperature range**: -55°C to +150°C
- **Reverse recovery time (T_rr)**: 35ns (typical)
- **Reverse leakage current (I_DSS)**: ≤250nA @ V_DS = 650V
- **Model**: TSM8N50CPROG-VB
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain to source voltage (V_DS)**: 650V
- **Gate drive voltage (V_GS)**: ±30V
- **Gate threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 700mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 7A
- **Maximum power dissipation (P_D)**: 50W
- **Maximum junction temperature**: +150°C
- **Technology type**: SJ_Multi-EPI
- **Switching Characteristics**:
- Turn-on delay time (t_d(on)): 15ns
- Turn-off delay time (t_d(off)): 18ns
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Thermal resistance (RthJC)**: 3.6°C/W (typical)
- **Junction temperature range**: -55°C to +150°C
- **Reverse recovery time (T_rr)**: 35ns (typical)
- **Reverse leakage current (I_DSS)**: ≤250nA @ V_DS = 650V
Domain and module applications：
3. **Application Fields and Module Examples**
# **Power Management Systems**
TSM8N50CPROG-VB has a wide range of applications in power management systems, especially in high voltage power conversion and voltage regulation modules. Due to its 650V withstand voltage capability, it is very suitable for devices such as high voltage DC-DC converters, AC-DC power supplies, and uninterruptible power supplies (UPS). In these applications, TSM8N50CPROG-VB provides efficient power switching and regulation capabilities, optimizes energy transfer and reduces power losses.
# **Automotive Electronics**
In automotive electrical systems, TSM8N50CPROG-VB can be used in high voltage battery management systems, power converters, and charging modules in electric vehicles (EV) or hybrid electric vehicles (HEV). Its high voltage and high current handling capabilities enable it to provide precise power control and conversion functions to meet the high efficiency requirements of automotive electrical systems.
Summary
TSM8N50CPROG-VB is a high-performance, low on-resistance 650V single N-Channel MOSFET, which is particularly suitable for power management, current switching, LED driving, motor control and efficient power conversion. It adopts SJ_Multi-EPI technology, provides excellent switching performance and high voltage handling capability, and is widely used in industrial power systems, home appliances, automotive electronics and efficient energy conversion.
# **Power Management Systems**
TSM8N50CPROG-VB has a wide range of applications in power management systems, especially in high voltage power conversion and voltage regulation modules. Due to its 650V withstand voltage capability, it is very suitable for devices such as high voltage DC-DC converters, AC-DC power supplies, and uninterruptible power supplies (UPS). In these applications, TSM8N50CPROG-VB provides efficient power switching and regulation capabilities, optimizes energy transfer and reduces power losses.
# **Automotive Electronics**
In automotive electrical systems, TSM8N50CPROG-VB can be used in high voltage battery management systems, power converters, and charging modules in electric vehicles (EV) or hybrid electric vehicles (HEV). Its high voltage and high current handling capabilities enable it to provide precise power control and conversion functions to meet the high efficiency requirements of automotive electrical systems.
Summary
TSM8N50CPROG-VB is a high-performance, low on-resistance 650V single N-Channel MOSFET, which is particularly suitable for power management, current switching, LED driving, motor control and efficient power conversion. It adopts SJ_Multi-EPI technology, provides excellent switching performance and high voltage handling capability, and is widely used in industrial power systems, home appliances, automotive electronics and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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