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TSM70N10CPROG-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**TSM70N10CPROG-VB** is a **single N-channel MOSFET** in **TO252 package**, designed to provide high-efficiency power management solutions. This MOSFET has a high voltage tolerance, **VDS maximum of 100V**, suitable for circuits requiring high voltage tolerance. Its **Vth** (gate threshold voltage) is **2.5V**, allowing the device to effectively conduct at a lower gate voltage.
**The **on-resistance (RDS(ON))** is 10.5mΩ** at **VGS=4.5V** and 8.5mΩ** at **VGS=10V**, which ensures that it has low power loss under high current working conditions. Its maximum drain current (ID) is **85A**, suitable for high-power and high-current applications. This MOSFET uses **Trench technology** to optimize switching performance and current carrying capacity, making it perform well in high-speed switching and power conversion.
**TSM70N10CPROG-VB** is a **single N-channel MOSFET** in **TO252 package**, designed to provide high-efficiency power management solutions. This MOSFET has a high voltage tolerance, **VDS maximum of 100V**, suitable for circuits requiring high voltage tolerance. Its **Vth** (gate threshold voltage) is **2.5V**, allowing the device to effectively conduct at a lower gate voltage.
**The **on-resistance (RDS(ON))** is 10.5mΩ** at **VGS=4.5V** and 8.5mΩ** at **VGS=10V**, which ensures that it has low power loss under high current working conditions. Its maximum drain current (ID) is **85A**, suitable for high-power and high-current applications. This MOSFET uses **Trench technology** to optimize switching performance and current carrying capacity, making it perform well in high-speed switching and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Model**: TSM70N10CPROG-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **10.5mΩ** @ VGS = 4.5V
- **8.5mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Power loss (Pd)**: Approximately 90W
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: Approx. 2200pF
- **Output capacitance (Coss)**: Approx. 180pF
- **Reverse recovery time (Trr)**: Approx. 90ns
- **Technology type**: Trench technology
- **Junction temperature**: +150°C (max)
- **Model**: TSM70N10CPROG-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **10.5mΩ** @ VGS = 4.5V
- **8.5mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Power loss (Pd)**: Approximately 90W
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: Approx. 2200pF
- **Output capacitance (Coss)**: Approx. 180pF
- **Reverse recovery time (Trr)**: Approx. 90ns
- **Technology type**: Trench technology
- **Junction temperature**: +150°C (max)
Domain and module applications：
3. Application fields and module examples:
**TSM70N10CPROG-VB** is well suited for a wide range of power management applications due to its high current carrying capacity, low on-resistance and high voltage withstand capability. The following are examples of applications of this model MOSFET in multiple fields:
# **1. Power management system**
TSM70N10CPROG-VB can be widely used in power management systems such as **DC-DC converters**, **AC-DC power adapters**, **power modules**. In these circuits, it acts as a high-speed switching element to help improve power conversion efficiency, especially under high load conditions. Due to its low on-resistance, it can reduce energy loss, improve system efficiency, and reduce heat generation, thereby improving the reliability and stability of the entire power system.
# **6. High-frequency switching circuits**
TSM70N10CPROG-VB is also suitable for **high-frequency switching circuits**, especially in high current and high voltage environments, such as **RF amplifiers, RF switches** and other applications. Its **Trench technology** optimizes the switching response speed, reduces switching losses, and is suitable for high-speed switching applications.
**Summary**:
**TSM70N10CPROG-VB** is an efficient and reliable **single N-channel MOSFET** with excellent current carrying capacity (maximum 85A) and low on-resistance, suitable for a variety of power management and high-efficiency switching applications. Its high voltage tolerance (100V), fast response time and low power loss make it an ideal choice for battery management, electric drive, power conversion, automotive power, etc., especially for high current, high-efficiency power systems and high-power applications.
**TSM70N10CPROG-VB** is well suited for a wide range of power management applications due to its high current carrying capacity, low on-resistance and high voltage withstand capability. The following are examples of applications of this model MOSFET in multiple fields:
# **1. Power management system**
TSM70N10CPROG-VB can be widely used in power management systems such as **DC-DC converters**, **AC-DC power adapters**, **power modules**. In these circuits, it acts as a high-speed switching element to help improve power conversion efficiency, especially under high load conditions. Due to its low on-resistance, it can reduce energy loss, improve system efficiency, and reduce heat generation, thereby improving the reliability and stability of the entire power system.
# **6. High-frequency switching circuits**
TSM70N10CPROG-VB is also suitable for **high-frequency switching circuits**, especially in high current and high voltage environments, such as **RF amplifiers, RF switches** and other applications. Its **Trench technology** optimizes the switching response speed, reduces switching losses, and is suitable for high-speed switching applications.
**Summary**:
**TSM70N10CPROG-VB** is an efficient and reliable **single N-channel MOSFET** with excellent current carrying capacity (maximum 85A) and low on-resistance, suitable for a variety of power management and high-efficiency switching applications. Its high voltage tolerance (100V), fast response time and low power loss make it an ideal choice for battery management, electric drive, power conversion, automotive power, etc., especially for high current, high-efficiency power systems and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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