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TSM6N50CP RO-VB Product details
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TSM6N50CP RO-VB MOSFET Product Introduction
TSM6N50CP RO-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for various high-voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum gate-source voltage (VGS) is ±30V, which is suitable for working in high-voltage systems. Its threshold voltage (Vth) is 3.5V, which can meet a wide range of power supply and circuit control needs. The on-resistance (RDS(ON)) of TSM6N50CP RO-VB is 1000mΩ@VGS=10V, which has good switching performance, can reduce energy loss and improve system efficiency. Its maximum drain current (ID) is 5A, which is suitable for medium-power applications.
This MOSFET adopts SJ_Multi-EPI technology, which can effectively reduce on-resistance, increase switching speed and optimize its high-voltage performance. The TSM6N50CP RO-VB is suitable for a variety of applications such as power converters, DC-DC converters, switching power supplies, load switches, etc., especially for medium-power systems that require high withstand voltage and low on-resistance.
TSM6N50CP RO-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for various high-voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum gate-source voltage (VGS) is ±30V, which is suitable for working in high-voltage systems. Its threshold voltage (Vth) is 3.5V, which can meet a wide range of power supply and circuit control needs. The on-resistance (RDS(ON)) of TSM6N50CP RO-VB is 1000mΩ@VGS=10V, which has good switching performance, can reduce energy loss and improve system efficiency. Its maximum drain current (ID) is 5A, which is suitable for medium-power applications.
This MOSFET adopts SJ_Multi-EPI technology, which can effectively reduce on-resistance, increase switching speed and optimize its high-voltage performance. The TSM6N50CP RO-VB is suitable for a variety of applications such as power converters, DC-DC converters, switching power supplies, load switches, etc., especially for medium-power systems that require high withstand voltage and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
TSM6N50CP RO-VB MOSFET Parameters
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
TSM6N50CP RO-VB MOSFET Applicable fields and modules
1. **Switching Power Supply (SMPS)**:
Due to its high withstand voltage (650V) and low on-resistance, TSM6N50CP RO-VB is particularly suitable for switching power supply (SMPS) systems. In applications such as AC-DC conversion and DC-DC conversion, it can provide efficient power conversion, reduce energy loss, and ensure stable operation of the system.
2. **DC-DC Converter**:
In battery-powered devices, TSM6N50CP RO-VB can be used as a switching element of the DC-DC converter, especially under high voltage and high current loads. Its low RDS(ON) characteristics result in less energy loss, improve the overall efficiency and reliability of the system, and are suitable for use in high-power power conversion modules.
3. **Power Management System**:
This MOSFET is suitable for power management systems, especially those that require high voltage tolerance and low conduction loss. Whether used in battery management systems or in applications such as communications and power transmission, the TSM6N50CP RO-VB can ensure precise power regulation and effective current control.
4. **Electric vehicle charger**:
Due to its 650V withstand voltage, the TSM6N50CP RO-VB is suitable for electric vehicle chargers. In charging circuits, MOSFETs need to withstand high voltages and large currents, and the TSM6N50CP is an ideal choice for stable power conversion and efficient current control.
5. **Load switch**:
The TSM6N50CP RO-VB can be used as a load switch for current disconnection and connection. Its excellent switching performance can help quickly switch the current flow direction and effectively protect the circuit system from overcurrent and voltage fluctuations.
6. **Battery management system (BMS)**:
In the battery management system, the TSM6N50CP RO-VB can accurately control the battery charging and discharging process. Its high withstand voltage and low on-resistance characteristics help reduce energy loss in the battery management process, improve battery charging and discharging efficiency, and ensure the safety and long life of the battery system.
7. **Photovoltaic cell inverter**:
Due to its ability to withstand high voltage and low on-resistance, the TSM6N50CP RO-VB can be used in photovoltaic inverters to help convert the DC output of photovoltaic cells into AC. Its efficient switching characteristics ensure the efficiency of the conversion process and reduce energy waste.
8. **Consumer electronics power adapter**:
TSM6N50CP RO-VB is also suitable for power adapters for various consumer electronics products, such as TVs, stereos, laptop power supplies, etc. These devices usually require efficient power conversion to ensure a stable power supply, and MOSFETs need to have high withstand voltage and good switching characteristics. TSM6N50CP can fully meet these needs.
9. **Industrial power supply system**:
In industrial power supply systems, especially in high-power systems and scenarios requiring efficient power conversion, TSM6N50CP RO-VB can perform excellently. Its high voltage resistance and high efficiency make it suitable for modules such as current control disconnection and switching power supply.
1. **Switching Power Supply (SMPS)**:
Due to its high withstand voltage (650V) and low on-resistance, TSM6N50CP RO-VB is particularly suitable for switching power supply (SMPS) systems. In applications such as AC-DC conversion and DC-DC conversion, it can provide efficient power conversion, reduce energy loss, and ensure stable operation of the system.
2. **DC-DC Converter**:
In battery-powered devices, TSM6N50CP RO-VB can be used as a switching element of the DC-DC converter, especially under high voltage and high current loads. Its low RDS(ON) characteristics result in less energy loss, improve the overall efficiency and reliability of the system, and are suitable for use in high-power power conversion modules.
3. **Power Management System**:
This MOSFET is suitable for power management systems, especially those that require high voltage tolerance and low conduction loss. Whether used in battery management systems or in applications such as communications and power transmission, the TSM6N50CP RO-VB can ensure precise power regulation and effective current control.
4. **Electric vehicle charger**:
Due to its 650V withstand voltage, the TSM6N50CP RO-VB is suitable for electric vehicle chargers. In charging circuits, MOSFETs need to withstand high voltages and large currents, and the TSM6N50CP is an ideal choice for stable power conversion and efficient current control.
5. **Load switch**:
The TSM6N50CP RO-VB can be used as a load switch for current disconnection and connection. Its excellent switching performance can help quickly switch the current flow direction and effectively protect the circuit system from overcurrent and voltage fluctuations.
6. **Battery management system (BMS)**:
In the battery management system, the TSM6N50CP RO-VB can accurately control the battery charging and discharging process. Its high withstand voltage and low on-resistance characteristics help reduce energy loss in the battery management process, improve battery charging and discharging efficiency, and ensure the safety and long life of the battery system.
7. **Photovoltaic cell inverter**:
Due to its ability to withstand high voltage and low on-resistance, the TSM6N50CP RO-VB can be used in photovoltaic inverters to help convert the DC output of photovoltaic cells into AC. Its efficient switching characteristics ensure the efficiency of the conversion process and reduce energy waste.
8. **Consumer electronics power adapter**:
TSM6N50CP RO-VB is also suitable for power adapters for various consumer electronics products, such as TVs, stereos, laptop power supplies, etc. These devices usually require efficient power conversion to ensure a stable power supply, and MOSFETs need to have high withstand voltage and good switching characteristics. TSM6N50CP can fully meet these needs.
9. **Industrial power supply system**:
In industrial power supply systems, especially in high-power systems and scenarios requiring efficient power conversion, TSM6N50CP RO-VB can perform excellently. Its high voltage resistance and high efficiency make it suitable for modules such as current control disconnection and switching power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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