中文
English
TSM6970DCA RV-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction - TSM6970DCA RV-VB**
TSM6970DCA RV-VB is a dual N-type MOSFET in TSSOP8 package, which is configured as common drain N+N type. This MOSFET has a drain-source voltage (V_DS) of 20V, suitable for low voltage power and signal switching applications. Its on-resistance (R_DS(ON)) is 14mΩ at V_GS = 4.5V, with low conduction loss and high efficiency. The gate threshold voltage (V_th) range of this device is 0.5V to 1.5V, making it suitable for low voltage drive applications. TSM6970DCA RV-VB uses Trench technology, which makes it show good current carrying capacity and low on-resistance in switching applications. The maximum drain current (I_D) of this device is 7.6A, which is widely used in power management, load switching, battery protection and low power supply conversion.
TSM6970DCA RV-VB is a dual N-type MOSFET in TSSOP8 package, which is configured as common drain N+N type. This MOSFET has a drain-source voltage (V_DS) of 20V, suitable for low voltage power and signal switching applications. Its on-resistance (R_DS(ON)) is 14mΩ at V_GS = 4.5V, with low conduction loss and high efficiency. The gate threshold voltage (V_th) range of this device is 0.5V to 1.5V, making it suitable for low voltage drive applications. TSM6970DCA RV-VB uses Trench technology, which makes it show good current carrying capacity and low on-resistance in switching applications. The maximum drain current (I_D) of this device is 7.6A, which is widely used in power management, load switching, battery protection and low power supply conversion.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. **Detailed parameter description**
- **Model**: TSM6970DCA RV-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain to Source Voltage(V_DS)**: 20V
- **Gate Drive Voltage(V_GS)**: ±12V
- **Threshold Voltage(V_th)**: 0.5V ~ 1.5V
- **On-resistance(R_DS(ON))**:
- 18mΩ @ V_GS = 2.5V
- 14mΩ @ V_GS = 4.5V
- **Maximum Drain Current(I_D)**: 7.6A
- **Maximum Power Dissipation**: 1.5W
- **Technology type**: Trench
- **Switching characteristics**:
- Turn-on delay time (t_d(on)): 15ns
- Turn-off delay time (t_d(off)): 20ns
- **Maximum gate-source voltage (V_GS_max)**: ±12V
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 45°C/W (typical)
- **Reverse recovery time (T_rr)**: 30ns (typical)
- **Model**: TSM6970DCA RV-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain to Source Voltage(V_DS)**: 20V
- **Gate Drive Voltage(V_GS)**: ±12V
- **Threshold Voltage(V_th)**: 0.5V ~ 1.5V
- **On-resistance(R_DS(ON))**:
- 18mΩ @ V_GS = 2.5V
- 14mΩ @ V_GS = 4.5V
- **Maximum Drain Current(I_D)**: 7.6A
- **Maximum Power Dissipation**: 1.5W
- **Technology type**: Trench
- **Switching characteristics**:
- Turn-on delay time (t_d(on)): 15ns
- Turn-off delay time (t_d(off)): 20ns
- **Maximum gate-source voltage (V_GS_max)**: ±12V
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 45°C/W (typical)
- **Reverse recovery time (T_rr)**: 30ns (typical)
Domain and module applications：
3. **Application Fields and Module Examples**
# **Power Management Systems**
TSM6970DCA RV-VB can be widely used in low voltage power management systems. Its low on-resistance and high current carrying capacity make it very suitable for efficient power switches and current control modules, especially in power conversion circuits that require high frequency switching. This MOSFET can provide reliable current transmission and reduce power loss, and is suitable for smart power supplies, DC-DC converters and other occasions.
# **Small Power Converters**
In the field of small power conversion, TSM6970DCA RV-VB can be used in low voltage DC-DC converters, such as USB power adapters, battery chargers and other applications. Due to its good current control and low on-resistance, it can provide efficient and reliable conversion performance for these power supplies.
# **USB Power Switches**
This MOSFET is also suitable for USB power switch circuits, especially in mobile phone charging, USB power adapters and other USB devices, to achieve efficient power control. TSM6970DCA RV-VB can handle high-speed current switching, which helps to reduce power loss and improve energy efficiency, and is suitable for power management of portable devices.
Summary
TSM6970DCA RV-VB is a dual N-type MOSFET suitable for low voltage and low power applications, using TSSOP8 package. Its low on-resistance, high current carrying capacity and excellent switching characteristics make it widely used in power management, battery protection, load switching, LED driving and low power power conversion. Its low gate drive voltage and high efficiency make this device an ideal choice for a variety of low power and high efficiency applications.
# **Power Management Systems**
TSM6970DCA RV-VB can be widely used in low voltage power management systems. Its low on-resistance and high current carrying capacity make it very suitable for efficient power switches and current control modules, especially in power conversion circuits that require high frequency switching. This MOSFET can provide reliable current transmission and reduce power loss, and is suitable for smart power supplies, DC-DC converters and other occasions.
# **Small Power Converters**
In the field of small power conversion, TSM6970DCA RV-VB can be used in low voltage DC-DC converters, such as USB power adapters, battery chargers and other applications. Due to its good current control and low on-resistance, it can provide efficient and reliable conversion performance for these power supplies.
# **USB Power Switches**
This MOSFET is also suitable for USB power switch circuits, especially in mobile phone charging, USB power adapters and other USB devices, to achieve efficient power control. TSM6970DCA RV-VB can handle high-speed current switching, which helps to reduce power loss and improve energy efficiency, and is suitable for power management of portable devices.
Summary
TSM6970DCA RV-VB is a dual N-type MOSFET suitable for low voltage and low power applications, using TSSOP8 package. Its low on-resistance, high current carrying capacity and excellent switching characteristics make it widely used in power management, battery protection, load switching, LED driving and low power power conversion. Its low gate drive voltage and high efficiency make this device an ideal choice for a variety of low power and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
