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TSM6968SDCA RV-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**TSM6968SDCA RV-VB** is a **dual N-channel MOSFET** in **TSSOP8** package, and its structure adopts **common source and common drain (Common Drain) configuration**. **The **VDS** of this device can withstand **20V** at most, and it can provide extremely excellent performance under **VGS** of **±12V**. **The **gate threshold voltage (Vth)** ranges from **0.5V to 1.5V**, which is suitable for low-voltage drive circuits. **The **on-resistance (RDS(ON)** is **14mΩ** at **VGS = 4.5V** and **18mΩ** at **VGS = 2.5V**. This low on-resistance ensures that the MOSFET can provide extremely low power loss under high current working conditions. **The **maximum drain current (ID)** is **7.6A**, which can work stably under large current loads.
This MOSFET uses advanced **Trench technology** and has a wide range of applications in power conversion, battery management, power amplification, etc. Its low on-resistance and high current carrying capacity make it perform well in circuits that require efficient switching control, especially suitable for low-voltage high-frequency circuits and low-power applications.
**TSM6968SDCA RV-VB** is a **dual N-channel MOSFET** in **TSSOP8** package, and its structure adopts **common source and common drain (Common Drain) configuration**. **The **VDS** of this device can withstand **20V** at most, and it can provide extremely excellent performance under **VGS** of **±12V**. **The **gate threshold voltage (Vth)** ranges from **0.5V to 1.5V**, which is suitable for low-voltage drive circuits. **The **on-resistance (RDS(ON)** is **14mΩ** at **VGS = 4.5V** and **18mΩ** at **VGS = 2.5V**. This low on-resistance ensures that the MOSFET can provide extremely low power loss under high current working conditions. **The **maximum drain current (ID)** is **7.6A**, which can work stably under large current loads.
This MOSFET uses advanced **Trench technology** and has a wide range of applications in power conversion, battery management, power amplification, etc. Its low on-resistance and high current carrying capacity make it perform well in circuits that require efficient switching control, especially suitable for low-voltage high-frequency circuits and low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description:
- **Model**: TSM6968SDCA RV-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain, dual N-channel MOSFET
- **Withstand voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- **18mΩ** @ VGS = 2.5V
- **14mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: 7.6A
- **Maximum power dissipation (Pd)**: Approximately 1.5W
- **Operating temperature range**: -40°C to +125°C
- **Typical input capacitance (Ciss)**: about 1100pF
- **Typical output capacitance (Coss)**: about 150pF
- **Typical reverse recovery time (Trr)**: about 120ns
- **Technology type**: Trench technology
- **Model**: TSM6968SDCA RV-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain, dual N-channel MOSFET
- **Withstand voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- **18mΩ** @ VGS = 2.5V
- **14mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: 7.6A
- **Maximum power dissipation (Pd)**: Approximately 1.5W
- **Operating temperature range**: -40°C to +125°C
- **Typical input capacitance (Ciss)**: about 1100pF
- **Typical output capacitance (Coss)**: about 150pF
- **Typical reverse recovery time (Trr)**: about 120ns
- **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples:
**TSM6968SDCA RV-VB** is suitable for various low-voltage and high-frequency switch control, power management and battery protection circuits, and is widely used in consumer electronics, communication equipment, automotive systems and other fields. The following are several typical application scenarios of this model:
# **1. Battery management and protection circuit**
In the **Battery Management System (BMS)**, the TSM6968SDCA RV-VB can achieve precise control of battery charging and discharging through its low on-resistance and high current handling capability. Especially in **portable devices** (such as smartphones, tablets, wireless headphones, etc.), it can efficiently manage the battery status and provide safe charging and discharging protection.
**Summary**:
**TSM6968SDCA RV-VB** is a dual N-channel MOSFET in TSSOP8 package suitable for low-voltage and high-frequency applications. With its low on-resistance and high current handling capability, it excels in battery management, power control, automotive electronics, communication equipment and smart home. Its reliability and high efficiency make it an ideal choice for efficient and energy-saving power management and switch control in modern electronic devices.
**TSM6968SDCA RV-VB** is suitable for various low-voltage and high-frequency switch control, power management and battery protection circuits, and is widely used in consumer electronics, communication equipment, automotive systems and other fields. The following are several typical application scenarios of this model:
# **1. Battery management and protection circuit**
In the **Battery Management System (BMS)**, the TSM6968SDCA RV-VB can achieve precise control of battery charging and discharging through its low on-resistance and high current handling capability. Especially in **portable devices** (such as smartphones, tablets, wireless headphones, etc.), it can efficiently manage the battery status and provide safe charging and discharging protection.
**Summary**:
**TSM6968SDCA RV-VB** is a dual N-channel MOSFET in TSSOP8 package suitable for low-voltage and high-frequency applications. With its low on-resistance and high current handling capability, it excels in battery management, power control, automotive electronics, communication equipment and smart home. Its reliability and high efficiency make it an ideal choice for efficient and energy-saving power management and switch control in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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