TSM4ND50CP RO-VB Product details
Product introduction:
TSM4ND50CP RO-VB is a high voltage N-channel MOSFET in TO252 package, suitable for high voltage switching and power conversion applications. This product adopts SJ_Multi-EPI technology, has low on-resistance and good switching characteristics, and supports high voltage (650V) working environment. TSM4ND50CP RO-VB has high voltage resistance and stable working performance, and is widely used in high-efficiency power management systems such as power conversion, LED drive, motor control, DC-DC conversion, etc. Its maximum drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ±30V, threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 1000mΩ, and maximum drain current (ID) is 5A. With its excellent switching performance and voltage resistance, TSM4ND50CP RO-VB provides high-efficiency and reliable solutions for various high-voltage power supply applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** |
|---------------------|------------------------|
| **Model** | TSM4ND50CP RO-VB |
| **Package** | TO252 |
| **Configuration** | Single-N-Channel |
| **Drain-Source Voltage(VDS)** | 650V |
| **Gate-Source Voltage(VGS)** | ±30V |
| **Threshold Voltage(Vth)** | 3.5V |
| **On-Resistance(RDS(ON))** | 1000mΩ (VGS=10V) |
| **Maximum Drain Current(ID)** | 5A |
| **Technology** | SJ_Multi-EPI Technology|
Domain and module applications:
TSM4ND50CP RO-VB is suitable for a variety of high-efficiency power management and power control applications with its 650V withstand voltage and low on-resistance. The following are typical application scenarios of this MOSFET:
- **High-voltage power conversion**: With a high withstand voltage of 650V, the TSM4ND50CP RO-VB is particularly suitable for high-voltage switches in AC-DC or DC-DC converters. In high-voltage power modules, MOSFETs can effectively switch current, maintain high efficiency and reduce losses. It is suitable for industrial power supplies, communication equipment, power supply and other fields.
- **LED drive circuit**: Due to its low on-resistance, the TSM4ND50CP RO-VB can provide higher efficiency when driving high-power LEDs, especially in LED lighting systems that require high-voltage switch control. By accurately controlling the current flow, the working life and brightness of the LED can be effectively improved.
- **Motor Control and Drive**: In motor drive systems, TSM4ND50CP RO-VB can be used in control circuits of DC motors or AC motors. Its high voltage tolerance makes it suitable for high-voltage motor drive systems, providing higher efficiency and precise current regulation, and is widely used in home appliances, industrial automation, and power tools.
- **Power Factor Correction (PFC) Circuit**: The high voltage withstand characteristics of this MOSFET make it suitable for power factor correction circuits. By effectively regulating current and voltage, optimizing power input power, and improving system efficiency, it is widely used in home appliances, computer power supplies, and other fields.
- **Uninterruptible Power Supply (UPS) System**: TSM4ND50CP RO-VB can be used as a power switch in UPS power systems, providing efficient power conversion and battery management. In UPS systems, MOSFET is responsible for switching between mains and batteries to ensure a stable supply of power, especially in high-voltage UPS systems.
- **Power Electronic Devices**: In power electronic devices, such as high-voltage frequency converters and inverters, the TSM4ND50CP RO-VB can be used as a high-voltage switching element for power conversion and regulation. These devices usually require components that can withstand high voltages, have high switching frequencies, and have low conduction losses to maintain efficient operation.
- **Solar Inverters**: In the inverters of solar power generation systems, the TSM4ND50CP RO-VB can convert DC power into AC power, and adapt to different types of power inputs through its high voltage resistance performance, ensuring stable operation of the system at high voltage and high power output.
- **Power Management Systems (Power Management ICs)**: The TSM4ND50CP RO-VB can be used in the design of high-voltage switching power supplies in various power management systems, especially for power management IC designs that require stable current control and efficient power conversion.
In summary, TSM4ND50CP RO-VB is a high-efficiency N-channel MOSFET with 650V withstand voltage and low on-resistance, which is widely used in high-voltage power conversion, LED drive, motor control, power factor correction, UPS system, power electronic equipment and solar inverter, etc. In these applications, it can provide efficient switching performance, low energy consumption and high reliability, and is particularly suitable for high-voltage power modules and precision power regulation systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image