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TSM4N90CI C0G-VB Product details
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Product Introduction
**TSM4N90CI C0G-VB** is a unipolar N-type MOSFET using **Plannar** technology and is packaged in **TO220F**. This MOSFET has a drain-source voltage (V_DS) of **950V** and is suitable for high-voltage, high-power switching applications, especially for use in power management, conversion and control modules that need to withstand high voltage and high current. Its on-resistance (R_DS(ON)) is **2400mΩ** at V_GS=10V, and the maximum leakage current (I_D) is **6A**. This MOSFET can provide reliable switching performance and efficiency in high-voltage power switches, motor drives, battery management and other power applications.
**TSM4N90CI C0G-VB** is a unipolar N-type MOSFET using **Plannar** technology and is packaged in **TO220F**. This MOSFET has a drain-source voltage (V_DS) of **950V** and is suitable for high-voltage, high-power switching applications, especially for use in power management, conversion and control modules that need to withstand high voltage and high current. Its on-resistance (R_DS(ON)) is **2400mΩ** at V_GS=10V, and the maximum leakage current (I_D) is **6A**. This MOSFET can provide reliable switching performance and efficiency in high-voltage power switches, motor drives, battery management and other power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 950V
- **Gate-source voltage (V_GS)**: ±30V
- **Turning voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 2400mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 6A
- **Technology**: Plannar technology
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 950V
- **Gate-source voltage (V_GS)**: ±30V
- **Turning voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 2400mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 6A
- **Technology**: Plannar technology
Domain and module applications：
Application fields and module examples
1. **High-voltage power supplies and power converters**
TSM4N90CI C0G-VB can be widely used in power systems that require high voltage tolerance, such as DC-DC converters, AC-DC power supplies, UPS power supplies, and battery chargers. Due to its high drain-source voltage (950V), it can reliably handle high voltages in these power conversion systems, and through its low on-resistance, it can effectively reduce power losses.
2. **Motor drives and industrial control systems**
Due to its high current carrying capacity (6A), TSM4N90CI C0G-VB is suitable for switching and regulation circuits in motor drives, power tools, automated machinery, and industrial control systems. In these high-power and high-voltage application scenarios, this MOSFET can provide stable current control and efficient switching functions for the motor, improving the stability and performance of the system.
3. **High-voltage switch circuits and power modules**
TSM4N90CI C0G-VB is suitable for use in power modules, especially in applications where high-voltage switch control is required, such as power transmission, variable-frequency drive systems, and energy management systems. Its V_DS of up to 950V and maximum drain current of 6A enable it to provide effective switch control in high-voltage environments, ensuring the stability and reliability of the power system.
4. **Power amplifier and RF applications**
This MOSFET is also widely used in high-power amplifier and RF circuits, especially RF power supplies, amplifiers, and communication modules that require high voltage support. Its lower on-resistance enables it to provide higher efficiency and lower heat loss in these circuits.
5. **Battery management systems and smart power**
TSM4N90CI C0G-VB is also suitable for use in battery management systems (BMS), especially in systems that require high voltage support, such as electric vehicle (EV) charging management, solar inverters, energy storage systems, etc. Its high voltage and high current characteristics make it an ideal choice for high-performance battery management systems, which can effectively manage the battery charging and discharging process.
1. **High-voltage power supplies and power converters**
TSM4N90CI C0G-VB can be widely used in power systems that require high voltage tolerance, such as DC-DC converters, AC-DC power supplies, UPS power supplies, and battery chargers. Due to its high drain-source voltage (950V), it can reliably handle high voltages in these power conversion systems, and through its low on-resistance, it can effectively reduce power losses.
2. **Motor drives and industrial control systems**
Due to its high current carrying capacity (6A), TSM4N90CI C0G-VB is suitable for switching and regulation circuits in motor drives, power tools, automated machinery, and industrial control systems. In these high-power and high-voltage application scenarios, this MOSFET can provide stable current control and efficient switching functions for the motor, improving the stability and performance of the system.
3. **High-voltage switch circuits and power modules**
TSM4N90CI C0G-VB is suitable for use in power modules, especially in applications where high-voltage switch control is required, such as power transmission, variable-frequency drive systems, and energy management systems. Its V_DS of up to 950V and maximum drain current of 6A enable it to provide effective switch control in high-voltage environments, ensuring the stability and reliability of the power system.
4. **Power amplifier and RF applications**
This MOSFET is also widely used in high-power amplifier and RF circuits, especially RF power supplies, amplifiers, and communication modules that require high voltage support. Its lower on-resistance enables it to provide higher efficiency and lower heat loss in these circuits.
5. **Battery management systems and smart power**
TSM4N90CI C0G-VB is also suitable for use in battery management systems (BMS), especially in systems that require high voltage support, such as electric vehicle (EV) charging management, solar inverters, energy storage systems, etc. Its high voltage and high current characteristics make it an ideal choice for high-performance battery management systems, which can effectively manage the battery charging and discharging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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