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TSM4N60CI CO-VB Product details
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TSM4N60CI CO-VB MOSFET Product Introduction
TSM4N60CI CO-VB is an N-Channel power MOSFET in TO220F package with high withstand voltage and low on-resistance, suitable for high-efficiency switching power supplies, power conversion and load control applications. This model has a maximum drain-source voltage (V_DS) of 650V, a gate-source voltage (V_GS) of ±30V, a maximum drain current (I_D) of 4A, a threshold voltage (V_th) of 3.5V, and uses Plannar technology. Its on-resistance (R_DS(on)) is 2560mΩ (V_GS = 10V), which enables it to provide efficient and stable performance in various medium-power electronic circuits.
The high withstand voltage and low leakage current characteristics of TSM4N60CI CO-VB make it suitable for high-demand power control fields such as high-voltage power supplies, DC-AC inverters, power tools, and battery management systems. The Trench process of this MOSFET ensures its low switching loss and high efficiency, and is widely used in industrial automation and consumer electronics.
TSM4N60CI CO-VB is an N-Channel power MOSFET in TO220F package with high withstand voltage and low on-resistance, suitable for high-efficiency switching power supplies, power conversion and load control applications. This model has a maximum drain-source voltage (V_DS) of 650V, a gate-source voltage (V_GS) of ±30V, a maximum drain current (I_D) of 4A, a threshold voltage (V_th) of 3.5V, and uses Plannar technology. Its on-resistance (R_DS(on)) is 2560mΩ (V_GS = 10V), which enables it to provide efficient and stable performance in various medium-power electronic circuits.
The high withstand voltage and low leakage current characteristics of TSM4N60CI CO-VB make it suitable for high-demand power control fields such as high-voltage power supplies, DC-AC inverters, power tools, and battery management systems. The Trench process of this MOSFET ensures its low switching loss and high efficiency, and is widely used in industrial automation and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
TSM4N60CI CO-VB MOSFET Detailed parameter description
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**:
- 2560mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 4A
- **Process technology (Technology)**: Plannar
- **Maximum power dissipation (P_D)**: Not provided
- **Operating temperature range**: Not provided
- **Switching speed**: Suitable for medium frequency switching applications
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**:
- 2560mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 4A
- **Process technology (Technology)**: Plannar
- **Maximum power dissipation (P_D)**: Not provided
- **Operating temperature range**: Not provided
- **Switching speed**: Suitable for medium frequency switching applications
Domain and module applications：
TSM4N60CI CO-VB MOSFET application areas and module examples
1. **Switching Power Supplies**
TSM4N60CI CO-VB is suitable for high-voltage switching power supplies (SMPS), especially in 650V applications, it can provide stable power conversion. Its lower on-resistance helps reduce power loss and improve the overall efficiency of the system. In applications such as AC-DC conversion and power modules, this MOSFET can effectively control the switching of current and maintain low switching losses.
2. **Power Tools**
In power tools, TSM4N60CI CO-VB is used as a power switching element to provide stable current conduction and cope with high-voltage working environments. Its maximum drain current is 4A, which is suitable for medium-power power tools, supports fast switching and reduces battery consumption, allowing the tools to operate stably for longer periods of time.
3. **DC-AC Inverters**
In DC-AC inverters, TSM4N60CI CO-VB is suitable for the switching circuit of the inverter, especially in a high-voltage environment of 650V, it can efficiently convert DC power to AC power. Its low on-resistance and high voltage resistance make it an ideal inverter switching element, especially suitable for scenarios such as solar inverters and electric vehicle chargers.
4. **Battery Management Systems**
In battery management systems (BMS), TSM4N60CI CO-VB is used to control the charging and discharging process of the battery. Through its low on-resistance characteristics, it effectively reduces the loss in the battery management process, helps extend battery life and improve energy efficiency. In addition, this MOSFET can also provide stable current control and protection in high-voltage battery systems.
5. **Home Appliances**
This MOSFET is suitable for power regulation modules in home appliances, such as air conditioners, electric water heaters and other equipment. In these home appliances, TSM4N60CI CO-VB can efficiently process power signals, reduce energy loss, and improve the working efficiency and stability of the equipment.
6. **Industrial Automation and Motor Control**
TSM4N60CI CO-VB can also be used in industrial automation equipment, especially in motor drive and control systems. As a switching element in the motor drive circuit, this MOSFET can help regulate current and control motor start, stop and speed, thereby achieving efficient motor control and operation.
7. **Power Electronics and Smart Grid**
As an important component in the smart grid system, TSM4N60CI CO-VB can be used in the switching circuit of power electronic equipment to help improve energy conversion efficiency and system stability. In these systems, the high voltage characteristics and low power loss of MOSFET make it an ideal switching element.
8. **Power Converters and Regulators**
In power converters and voltage regulators, TSM4N60CI CO-VB provides efficient current regulation to ensure stable operation of the load under various operating conditions. Its low on-resistance reduces power loss and is suitable for a variety of applications requiring efficient power conversion.
1. **Switching Power Supplies**
TSM4N60CI CO-VB is suitable for high-voltage switching power supplies (SMPS), especially in 650V applications, it can provide stable power conversion. Its lower on-resistance helps reduce power loss and improve the overall efficiency of the system. In applications such as AC-DC conversion and power modules, this MOSFET can effectively control the switching of current and maintain low switching losses.
2. **Power Tools**
In power tools, TSM4N60CI CO-VB is used as a power switching element to provide stable current conduction and cope with high-voltage working environments. Its maximum drain current is 4A, which is suitable for medium-power power tools, supports fast switching and reduces battery consumption, allowing the tools to operate stably for longer periods of time.
3. **DC-AC Inverters**
In DC-AC inverters, TSM4N60CI CO-VB is suitable for the switching circuit of the inverter, especially in a high-voltage environment of 650V, it can efficiently convert DC power to AC power. Its low on-resistance and high voltage resistance make it an ideal inverter switching element, especially suitable for scenarios such as solar inverters and electric vehicle chargers.
4. **Battery Management Systems**
In battery management systems (BMS), TSM4N60CI CO-VB is used to control the charging and discharging process of the battery. Through its low on-resistance characteristics, it effectively reduces the loss in the battery management process, helps extend battery life and improve energy efficiency. In addition, this MOSFET can also provide stable current control and protection in high-voltage battery systems.
5. **Home Appliances**
This MOSFET is suitable for power regulation modules in home appliances, such as air conditioners, electric water heaters and other equipment. In these home appliances, TSM4N60CI CO-VB can efficiently process power signals, reduce energy loss, and improve the working efficiency and stability of the equipment.
6. **Industrial Automation and Motor Control**
TSM4N60CI CO-VB can also be used in industrial automation equipment, especially in motor drive and control systems. As a switching element in the motor drive circuit, this MOSFET can help regulate current and control motor start, stop and speed, thereby achieving efficient motor control and operation.
7. **Power Electronics and Smart Grid**
As an important component in the smart grid system, TSM4N60CI CO-VB can be used in the switching circuit of power electronic equipment to help improve energy conversion efficiency and system stability. In these systems, the high voltage characteristics and low power loss of MOSFET make it an ideal switching element.
8. **Power Converters and Regulators**
In power converters and voltage regulators, TSM4N60CI CO-VB provides efficient current regulation to ensure stable operation of the load under various operating conditions. Its low on-resistance reduces power loss and is suitable for a variety of applications requiring efficient power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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