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TSM4416DCS RLG-VB Product details

Product introduction:

1. Product Introduction

**TSM4416DCS RLG-VB** is a dual N-type MOSFET in SOP8 package with 30V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). The gate threshold voltage (Vth) of this product is 1.7V, the on-resistance (RDS(ON)) is 16mΩ (at VGS=10V), and the maximum drain current is 8.5A. TSM4416DCS RLG-VB adopts Trench technology, with low on-resistance, high current carrying capacity and excellent switching performance, suitable for high-efficiency power management and drive circuits.

This model is a dual MOSFET structure with two N-type MOSFETs integrated inside. They share a power port in the same package, with smaller size and lower conduction loss. This design can greatly improve the efficiency of the power system and reduce the circuit space requirements. It is an ideal choice for various high-efficiency power supplies, LED driver power supplies and small power control modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
2. Detailed parameter description

- **Model**: TSM4416DCS RLG-VB
- **Package**: SOP8
- **Configuration**: Dual N-type MOSFET (N+N-Channel)
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 16mΩ @ VGS=10V
- 20mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 8.5A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (Junction to Case)**: 60°C/W
- **Power loss**: 1.5W (maximum, specific power consumption depends on working conditions)
- **Maximum reverse recovery time**: 100ns (typical)
- **Maximum power dissipation**: 1W (maximum)
- **Application areas**:
- High-efficiency power management
- LED driver power
- Switching power supply (SMPS)
- Battery management system (BMS)
- Small power driver module

Domain and module applications:

3. Application fields and module examples

**1. High-efficiency power management system**
TSM4416DCS RLG-VB is very suitable for high-efficiency power management systems, especially in applications such as battery-powered devices, portable power supplies, and LED driver power supplies. Its low on-resistance (RDS(ON)) can reduce power loss, improve power conversion efficiency, and extend battery life.

For example, in a portable mobile power supply, TSM4416DCS RLG-VB can be used as a switching element in the power management circuit for power buck conversion to maintain efficient power conversion and low power consumption.

**2. LED driver power supply**
TSM4416DCS RLG-VB is suitable for use in LED driver power supplies and can stably drive high-power LED lighting systems. Due to its low RDS(ON), the MOSFET can effectively control the current, ensure the stable operation of LED lamps, and improve the efficiency of the system.

For example, in LED display screens, circuit board backlights, and indoor and outdoor LED lighting, the TSM4416DCS RLG-VB can be used as a switching element to regulate LED current, reduce energy loss, and extend the service life of LEDs.

**3. Switching Power Supply (SMPS)**
This MOSFET performs well in switching power supplies (SMPS) and can provide stable current switching for DC-DC converters (DC-DC). By reducing conduction losses, the TSM4416DCS RLG-VB can effectively improve the conversion efficiency of power supplies, especially in power supply and energy management applications.

For example, in power modules, it can be used as a switching element of a DC-DC converter to stabilize the output voltage and reduce energy waste in the system to improve overall efficiency.

**4. Battery Management System (BMS)**
The TSM4416DCS RLG-VB is also very suitable for switch control circuits in battery management systems (BMS). Its low on-resistance enables it to efficiently handle current fluctuations during battery charging and discharging, and effectively regulate power to protect the battery from overcurrent, overvoltage and other problems.

For example, in the BMS system of electric vehicles, TSM4416DCS RLG-VB can be used as a core component of the battery protection circuit to ensure the safety and stability of the battery during charging and discharging.

**5. Small power drive module**
Due to its compact SOP8 package and high-efficiency current switching performance, TSM4416DCS RLG-VB is also widely used in small power drive modules, such as sensor drive, micro motor control and other applications. These modules have high requirements for space and energy efficiency, and this MOSFET can provide reliable performance to adapt to these requirements.

For example, in the motor drive control system of a small drone, TSM4416DCS RLG-VB can be used to drive the motor and ensure high efficiency and reliability during power transmission.

**Summary**
TSM4416DCS RLG-VB is a dual N-type MOSFET suitable for high-efficiency power management, LED driver power supply, switching power supply, battery management system and small power driver module. Its low on-resistance, high current carrying capacity and small package enable it to provide efficient and stable working performance in many applications, helping to reduce power loss and improve system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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