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TSM3N90CHC5G-VB Product details
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1. Product Introduction
**TSM3N90CHC5G-VB** is a single N-type MOSFET in TO251 package with a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V. The gate threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance RDS(ON) is 2700mΩ (at VGS=10V). Its maximum continuous drain current is 2A. It adopts SJ_Multi-EPI technology, has low on-resistance and high voltage tolerance, and is suitable for high-voltage switching power supplies, inverters and other high-voltage applications.
TSM3N90CHC5G-VB has strong voltage tolerance and high efficiency, can work stably in high voltage environment, and is widely used in switch regulation and current control in power conversion and industrial control systems. This MOSFET is of great value in applications such as power management, high-frequency switching and current protection circuits.
**TSM3N90CHC5G-VB** is a single N-type MOSFET in TO251 package with a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V. The gate threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance RDS(ON) is 2700mΩ (at VGS=10V). Its maximum continuous drain current is 2A. It adopts SJ_Multi-EPI technology, has low on-resistance and high voltage tolerance, and is suitable for high-voltage switching power supplies, inverters and other high-voltage applications.
TSM3N90CHC5G-VB has strong voltage tolerance and high efficiency, can work stably in high voltage environment, and is widely used in switch regulation and current control in power conversion and industrial control systems. This MOSFET is of great value in applications such as power management, high-frequency switching and current protection circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Model**: TSM3N90CHC5G-VB
- **Package**: TO251
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2700mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-EPI technology)
- **Power loss (Ptot)**: 35W (maximum value, specific power consumption depends on operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 62°C/W (from junction to heat sink)
- **Maximum power dissipation**: 35W (calculated according to ambient temperature and actual power requirements)
- **Maximum reverse recovery time**: 300ns (typical)
- **Application areas**:
- High voltage power management
- Industrial switching power supplies
- Motor drives
- Inverter applications
- **Model**: TSM3N90CHC5G-VB
- **Package**: TO251
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2700mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-EPI technology)
- **Power loss (Ptot)**: 35W (maximum value, specific power consumption depends on operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 62°C/W (from junction to heat sink)
- **Maximum power dissipation**: 35W (calculated according to ambient temperature and actual power requirements)
- **Maximum reverse recovery time**: 300ns (typical)
- **Application areas**:
- High voltage power management
- Industrial switching power supplies
- Motor drives
- Inverter applications
Domain and module applications：
3. Application fields and module examples
**1. High-voltage power management system**
TSM3N90CHC5G-VB is very suitable for high-voltage power management systems, especially as a switching element in high-voltage (900V) DC-DC converters and AC-DC power supplies. Its high voltage tolerance makes it an indispensable component in high-voltage power management, enabling it to control current and reduce power losses during efficient power conversion, thereby improving power conversion efficiency.
For example, in power supply systems, TSM3N90CHC5G-VB can be used as the main switching element of inverters or power regulators to regulate and control high-voltage outputs to meet the needs of different applications.
**2. Industrial switching power supply**
This MOSFET is also very suitable for industrial switching power supplies (SMPS). In power electronic control and high-power transmission systems, the high voltage withstand characteristics of TSM3N90CHC5G-VB enable it to handle higher operating voltages and power requirements. It can provide stable switching performance in industrial control applications, which helps to work stably in modules such as transformers, laser drive power supplies, and high-voltage chargers.
For example, in industrial automation systems, it can be used to drive loads or motor control modules. Its stable switching performance enables it to withstand large current loads and ensure long-term stable operation of the equipment.
**3. Motor drive and control**
TSM3N90CHC5G-VB is also an ideal choice in motor drive systems, especially for high-voltage motor control modules. It can withstand higher voltages and effectively control current, allowing motor drive systems to maintain efficient and stable operation in high-voltage power supply environments. It is widely used in drive circuits for fans, pumps, compressors, and other industrial machinery.
**4. Inverter applications**
TSM3N90CHC5G-VB is widely used in solar inverters and other high-voltage power inverters due to its excellent high-voltage withstand capability. In these inverter applications, MOSFETs can convert DC power into AC power and ensure stable and efficient current transmission throughout the process.
For example, in a solar power generation system, the TSM3N90CHC5G-VB can be used as a switching element in a solar inverter to help convert and regulate the DC power output from the solar panel.
**5. Current protection circuit**
The TSM3N90CHC5G-VB can also be used in current protection circuits. This MOSFET can be applied to overcurrent protection systems to prevent circuit damage by efficiently cutting off or regulating the flow of current. In battery management systems (BMS) and high-voltage protection circuits, the TSM3N90CHC5G-VB can provide precise current control to ensure the safety of batteries or equipment.
For example, in a high-voltage battery charger, it can control and protect the battery from damage caused by overcurrent or overvoltage, ensuring the safety of the charging process.
**Summary**
The TSM3N90CHC5G-VB is an N-type MOSFET suitable for high-voltage power management, motor drive, and industrial switching power supplies. With its high voltage tolerance, low on-resistance and strong current carrying capacity, TSM3N90CHC5G-VB performs well in applications such as power conversion, inverters, and current protection, effectively improving system efficiency and ensuring safe operation of equipment.
**1. High-voltage power management system**
TSM3N90CHC5G-VB is very suitable for high-voltage power management systems, especially as a switching element in high-voltage (900V) DC-DC converters and AC-DC power supplies. Its high voltage tolerance makes it an indispensable component in high-voltage power management, enabling it to control current and reduce power losses during efficient power conversion, thereby improving power conversion efficiency.
For example, in power supply systems, TSM3N90CHC5G-VB can be used as the main switching element of inverters or power regulators to regulate and control high-voltage outputs to meet the needs of different applications.
**2. Industrial switching power supply**
This MOSFET is also very suitable for industrial switching power supplies (SMPS). In power electronic control and high-power transmission systems, the high voltage withstand characteristics of TSM3N90CHC5G-VB enable it to handle higher operating voltages and power requirements. It can provide stable switching performance in industrial control applications, which helps to work stably in modules such as transformers, laser drive power supplies, and high-voltage chargers.
For example, in industrial automation systems, it can be used to drive loads or motor control modules. Its stable switching performance enables it to withstand large current loads and ensure long-term stable operation of the equipment.
**3. Motor drive and control**
TSM3N90CHC5G-VB is also an ideal choice in motor drive systems, especially for high-voltage motor control modules. It can withstand higher voltages and effectively control current, allowing motor drive systems to maintain efficient and stable operation in high-voltage power supply environments. It is widely used in drive circuits for fans, pumps, compressors, and other industrial machinery.
**4. Inverter applications**
TSM3N90CHC5G-VB is widely used in solar inverters and other high-voltage power inverters due to its excellent high-voltage withstand capability. In these inverter applications, MOSFETs can convert DC power into AC power and ensure stable and efficient current transmission throughout the process.
For example, in a solar power generation system, the TSM3N90CHC5G-VB can be used as a switching element in a solar inverter to help convert and regulate the DC power output from the solar panel.
**5. Current protection circuit**
The TSM3N90CHC5G-VB can also be used in current protection circuits. This MOSFET can be applied to overcurrent protection systems to prevent circuit damage by efficiently cutting off or regulating the flow of current. In battery management systems (BMS) and high-voltage protection circuits, the TSM3N90CHC5G-VB can provide precise current control to ensure the safety of batteries or equipment.
For example, in a high-voltage battery charger, it can control and protect the battery from damage caused by overcurrent or overvoltage, ensuring the safety of the charging process.
**Summary**
The TSM3N90CHC5G-VB is an N-type MOSFET suitable for high-voltage power management, motor drive, and industrial switching power supplies. With its high voltage tolerance, low on-resistance and strong current carrying capacity, TSM3N90CHC5G-VB performs well in applications such as power conversion, inverters, and current protection, effectively improving system efficiency and ensuring safe operation of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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