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TSM3N80CHC5G-VB Product details
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1. **Product Introduction - TSM3N80CHC5G-VB**
TSM3N80CHC5G-VB is a unipolar N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (V_DS) is 800V, suitable for power conversion and load control circuits that require high withstand voltage. This MOSFET has a high gate drive voltage (V_GS), can withstand a gate drive voltage of ±30V, and has a threshold voltage (V_th) of 3.5V. At V_GS = 10V, the on-resistance (R_DS(ON)) is 2.6Ω and the maximum drain current (I_D) is 2A. TSM3N80CHC5G-VB uses SJ_Multi-EPI technology, providing high withstand voltage, low leakage current and good switching characteristics, suitable for power electronic systems that require high withstand voltage and low current.
TSM3N80CHC5G-VB is a unipolar N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (V_DS) is 800V, suitable for power conversion and load control circuits that require high withstand voltage. This MOSFET has a high gate drive voltage (V_GS), can withstand a gate drive voltage of ±30V, and has a threshold voltage (V_th) of 3.5V. At V_GS = 10V, the on-resistance (R_DS(ON)) is 2.6Ω and the maximum drain current (I_D) is 2A. TSM3N80CHC5G-VB uses SJ_Multi-EPI technology, providing high withstand voltage, low leakage current and good switching characteristics, suitable for power electronic systems that require high withstand voltage and low current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description**
- **Model**: TSM3N80CHC5G-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage(V_DS)**: 800V
- **Gate Drive Voltage(V_GS)**: ±30V
- **Threshold Voltage(V_th)**: 3.5V
- **On-resistance(R_DS(ON))**: 2600mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 2A
- **Maximum Power Dissipation**: 1.5W (calculated based on thermal resistance and operating conditions)
- **Technology Type**: SJ_Multi-EPI
- **Switching Characteristics**:
- Turn-on delay time: 80ns
- Turn-off delay time: 150ns
- Reverse recovery time: 200ns
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Maximum drain-source current (I_D_max)**: 2A
- **Gate charge (Qg)**: 40nC (typical)
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 62°C/W (typical)
- **Model**: TSM3N80CHC5G-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage(V_DS)**: 800V
- **Gate Drive Voltage(V_GS)**: ±30V
- **Threshold Voltage(V_th)**: 3.5V
- **On-resistance(R_DS(ON))**: 2600mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 2A
- **Maximum Power Dissipation**: 1.5W (calculated based on thermal resistance and operating conditions)
- **Technology Type**: SJ_Multi-EPI
- **Switching Characteristics**:
- Turn-on delay time: 80ns
- Turn-off delay time: 150ns
- Reverse recovery time: 200ns
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Maximum drain-source current (I_D_max)**: 2A
- **Gate charge (Qg)**: 40nC (typical)
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 62°C/W (typical)
Domain and module applications：
3. **Application Fields and Module Examples**
- **High Voltage Power Conversion Systems**
Due to its 800V drain-to-source voltage, the TSM3N80CHC5G-VB is particularly suitable for high voltage power conversion systems, such as AC-DC converters, DC-DC converters and other power conversion equipment. It can work stably at higher voltages, ensuring the high efficiency and reliability of the system, and is suitable for industrial power supplies, solar panel power supplies and other fields.
- **Switching Power Supplies**
In switching power supply modules, the TSM3N80CHC5G-VB can be used for power switching applications, especially systems that require stable switching at high voltages. Its high withstand voltage characteristics enable it to cope with voltage fluctuations and transient voltage changes, ensuring the stability of the switching power supply, and is widely used in industrial automation, power equipment, and communication equipment.
- **High Voltage Motor Drives**
TSM3N80CHC5G-VB is very useful in high voltage motor drive systems, especially where precise control of motor start and stop is required. By using this MOSFET, efficient motor control can be achieved, which is suitable for air conditioning compressors, elevator systems, and other industrial motor drive applications.
- **Power Modules**
This MOSFET is also suitable for various power modules, especially in medium power power equipment. TSM3N80CHC5G-VB can be used as a power switch to provide high current carrying capacity at low power loss, suitable for functions such as current control and power distribution in power modules.
- **Power Management in Medical Devices**
In medical equipment, TSM3N80CHC5G-VB can be used in power management systems, especially in power modules that require high voltage resistance and high stability. It can help achieve efficient power transmission of equipment and ensure the safe operation of medical equipment in high-voltage environments. It is suitable for power management of equipment such as bed monitoring equipment and X-ray machines.
- **Battery Management Systems (BMS)**
In the battery management system, TSM3N80CHC5G-VB can be used as a high-voltage switch to control the charge and discharge of the battery, especially the management of high-voltage batteries (such as electric vehicle batteries, solar cells, etc.). Its high voltage resistance enables it to operate safely and stably during the battery management process, and is suitable for electric vehicles, energy storage devices, etc.
- **Automotive Electronics**
In electric vehicles and other automotive electronic systems, TSM3N80CHC5G-VB can be used in battery power management, charging systems, and power systems to provide efficient power conversion and control. Its 800V voltage resistance is suitable for the high-voltage drive system of electric vehicles to ensure the stability and safety of the system under high voltage.
- **RF Modulation and Demodulation**
Due to its adaptability to high voltage and stable switching characteristics, the TSM3N80CHC5G-VB can be used in high-frequency signal modulation and demodulation modules, especially in wireless communication equipment that requires high voltage operation, such as satellite communications, radio transmission and reception equipment, etc., to provide high-efficiency signal conditioning and processing.
- **High Voltage Power Conversion Systems**
Due to its 800V drain-to-source voltage, the TSM3N80CHC5G-VB is particularly suitable for high voltage power conversion systems, such as AC-DC converters, DC-DC converters and other power conversion equipment. It can work stably at higher voltages, ensuring the high efficiency and reliability of the system, and is suitable for industrial power supplies, solar panel power supplies and other fields.
- **Switching Power Supplies**
In switching power supply modules, the TSM3N80CHC5G-VB can be used for power switching applications, especially systems that require stable switching at high voltages. Its high withstand voltage characteristics enable it to cope with voltage fluctuations and transient voltage changes, ensuring the stability of the switching power supply, and is widely used in industrial automation, power equipment, and communication equipment.
- **High Voltage Motor Drives**
TSM3N80CHC5G-VB is very useful in high voltage motor drive systems, especially where precise control of motor start and stop is required. By using this MOSFET, efficient motor control can be achieved, which is suitable for air conditioning compressors, elevator systems, and other industrial motor drive applications.
- **Power Modules**
This MOSFET is also suitable for various power modules, especially in medium power power equipment. TSM3N80CHC5G-VB can be used as a power switch to provide high current carrying capacity at low power loss, suitable for functions such as current control and power distribution in power modules.
- **Power Management in Medical Devices**
In medical equipment, TSM3N80CHC5G-VB can be used in power management systems, especially in power modules that require high voltage resistance and high stability. It can help achieve efficient power transmission of equipment and ensure the safe operation of medical equipment in high-voltage environments. It is suitable for power management of equipment such as bed monitoring equipment and X-ray machines.
- **Battery Management Systems (BMS)**
In the battery management system, TSM3N80CHC5G-VB can be used as a high-voltage switch to control the charge and discharge of the battery, especially the management of high-voltage batteries (such as electric vehicle batteries, solar cells, etc.). Its high voltage resistance enables it to operate safely and stably during the battery management process, and is suitable for electric vehicles, energy storage devices, etc.
- **Automotive Electronics**
In electric vehicles and other automotive electronic systems, TSM3N80CHC5G-VB can be used in battery power management, charging systems, and power systems to provide efficient power conversion and control. Its 800V voltage resistance is suitable for the high-voltage drive system of electric vehicles to ensure the stability and safety of the system under high voltage.
- **RF Modulation and Demodulation**
Due to its adaptability to high voltage and stable switching characteristics, the TSM3N80CHC5G-VB can be used in high-frequency signal modulation and demodulation modules, especially in wireless communication equipment that requires high voltage operation, such as satellite communications, radio transmission and reception equipment, etc., to provide high-efficiency signal conditioning and processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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