中文
English
TSM3911DCX6 RF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**TSM3911DCX6 RF-VB** is a **dual P-Channel MOSFET** in **SOT23-6 package**, suitable for various low-voltage power management and switch control applications. This MOSFET has a dual-channel configuration, including two P-Channel transistors, which can efficiently perform load switch control and power regulation. Its withstand voltage (VDS) is **-20V**, which is suitable for low-voltage circuits that require efficient load regulation and load switching. **TSM3911DCX6 RF-VB** has a maximum drain current (ID) of **-4A**, excellent switching characteristics and low on-resistance (RDS(ON)), enabling it to provide high efficiency at a lower gate-source voltage (VGS). This product uses **Trench technology**, has low conduction losses, and is suitable for applications requiring low power consumption and high reliability.
**TSM3911DCX6 RF-VB** is a **dual P-Channel MOSFET** in **SOT23-6 package**, suitable for various low-voltage power management and switch control applications. This MOSFET has a dual-channel configuration, including two P-Channel transistors, which can efficiently perform load switch control and power regulation. Its withstand voltage (VDS) is **-20V**, which is suitable for low-voltage circuits that require efficient load regulation and load switching. **TSM3911DCX6 RF-VB** has a maximum drain current (ID) of **-4A**, excellent switching characteristics and low on-resistance (RDS(ON)), enabling it to provide high efficiency at a lower gate-source voltage (VGS). This product uses **Trench technology**, has low conduction losses, and is suitable for applications requiring low power consumption and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
2. Detailed parameter description:
- **Model**: TSM3911DCX6 RF-VB
- **Package type**: SOT23-6
- **Configuration**: Dual P-Channel MOSFET (Dual P+P-Channel)
- **Withstand voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- **100mΩ** @ VGS = 2.5V
- **75mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: -4A
- **Maximum power dissipation (Pd)**: Approximately 0.5W
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Trench technology
- **Maximum pulse current (IDM)**: -6A
- **Input capacitance (Ciss)**: Approx. 50pF
- **Output capacitance (Coss)**: Approx. 30pF
- **Reverse recovery time (Trr)**: Approx. 150ns
- **Typical switching characteristics**: Medium speed switching
- **Total capacitance (Crss)**: Approx. 20pF
- **Model**: TSM3911DCX6 RF-VB
- **Package type**: SOT23-6
- **Configuration**: Dual P-Channel MOSFET (Dual P+P-Channel)
- **Withstand voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- **100mΩ** @ VGS = 2.5V
- **75mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: -4A
- **Maximum power dissipation (Pd)**: Approximately 0.5W
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Trench technology
- **Maximum pulse current (IDM)**: -6A
- **Input capacitance (Ciss)**: Approx. 50pF
- **Output capacitance (Coss)**: Approx. 30pF
- **Reverse recovery time (Trr)**: Approx. 150ns
- **Typical switching characteristics**: Medium speed switching
- **Total capacitance (Crss)**: Approx. 20pF
Domain and module applications：
3. Applications and module examples:
**TSM3911DCX6 RF-VB** is very suitable for low-power, high-efficiency switching applications due to its low voltage, low on-resistance and large drain current capability, especially in areas that require high-efficiency load switching and power regulation. The following are its main application areas and examples:
# **Power Management**
In power management systems, **TSM3911DCX6 RF-VB** can be used as a load switch in **DC-DC converters**, **battery management systems**, **power supplies**, etc. By controlling the switching of power, this MOSFET helps improve system efficiency and can effectively control the connection and disconnection of loads. Its **low on-resistance** reduces losses and is suitable for high-efficiency power modules, especially in systems with low voltage input.
# **Mobile and Portable Devices**
**TSM3911DCX6 RF-VB** is very suitable for power management and load switching circuits in mobile devices (such as smartphones, tablets) and portable devices. It can accurately control the power input and output, as well as provide stable power for various modules. These features make this MOSFET widely used in low-voltage, low-power designs to improve the working efficiency of equipment.
# **Automation Control and Industrial Applications**
In **Industrial Automation**, **TSM3911DCX6 RF-VB** can be used for **PLC controllers**, **sensor control**, **actuators** and **switching power supply** modules. Its low on-resistance and efficient switching characteristics make it excellent in current control tasks in these fields.
**Summary**:
**TSM3911DCX6 RF-VB** is a dual P-Channel MOSFET designed for low-voltage, load switching and power management applications. With its low on-resistance, large drain current capability and high-efficiency switching characteristics, it has a wide range of applications in power management, battery management, LED drive, motor control, mobile devices and other fields. Whether in power management of portable devices, automotive electronic systems, or industrial automation control, the TSM3911DCX6 RF-VB provides reliable and efficient performance.
**TSM3911DCX6 RF-VB** is very suitable for low-power, high-efficiency switching applications due to its low voltage, low on-resistance and large drain current capability, especially in areas that require high-efficiency load switching and power regulation. The following are its main application areas and examples:
# **Power Management**
In power management systems, **TSM3911DCX6 RF-VB** can be used as a load switch in **DC-DC converters**, **battery management systems**, **power supplies**, etc. By controlling the switching of power, this MOSFET helps improve system efficiency and can effectively control the connection and disconnection of loads. Its **low on-resistance** reduces losses and is suitable for high-efficiency power modules, especially in systems with low voltage input.
# **Mobile and Portable Devices**
**TSM3911DCX6 RF-VB** is very suitable for power management and load switching circuits in mobile devices (such as smartphones, tablets) and portable devices. It can accurately control the power input and output, as well as provide stable power for various modules. These features make this MOSFET widely used in low-voltage, low-power designs to improve the working efficiency of equipment.
# **Automation Control and Industrial Applications**
In **Industrial Automation**, **TSM3911DCX6 RF-VB** can be used for **PLC controllers**, **sensor control**, **actuators** and **switching power supply** modules. Its low on-resistance and efficient switching characteristics make it excellent in current control tasks in these fields.
**Summary**:
**TSM3911DCX6 RF-VB** is a dual P-Channel MOSFET designed for low-voltage, load switching and power management applications. With its low on-resistance, large drain current capability and high-efficiency switching characteristics, it has a wide range of applications in power management, battery management, LED drive, motor control, mobile devices and other fields. Whether in power management of portable devices, automotive electronic systems, or industrial automation control, the TSM3911DCX6 RF-VB provides reliable and efficient performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
