TSM3460CX6 RF-VB Product details
Product introduction:
**TSM3460CX6 RF-VB** is a unipolar N-type MOSFET using **Trench** technology and is packaged in **SOT23-6**. This MOSFET has a drain-source voltage (V_DS) of 30V and a maximum drain current of 6A, suitable for low-voltage, high-efficiency switching applications. Its on-resistance (R_DS(ON)) is 27mΩ at V_GS=4.5V and 26mΩ at V_GS=10V, ensuring low-power, high-efficiency switching performance at higher currents. The turn-on voltage (V_th) of the TSM3460CX6 RF-VB is 1.7V, which is suitable for low-voltage and medium-power switching control. It is widely used in power management, load switching, LED driving and other low-current, high-efficiency switching systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 26mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
- **Package**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 1.7V
- **Channel on-resistance (R_DS(ON))**:
- 26mΩ @ V_GS = 10V
- 27mΩ @ V_GS = 4.5V
- **Maximum leakage current (I_D)**: 6A
- **Technology**: Trench technology
Domain and module applications:
1. **Low-power switching power supply (SMPS)**
TSM3460CX6 RF-VB is suitable for power regulation and switching control in low-power switching power supplies (SMPS). Due to its low on-resistance (R_DS(ON)) and high current carrying capacity (6A), this MOSFET can provide high-efficiency power switching in small power modules, especially suitable for portable devices, mobile power supplies and other low-power power systems.
2. **LED drive and small lighting system**
TSM3460CX6 RF-VB is very suitable for LED drive circuits, especially in low-power and compact LED lighting systems. Due to its low on-resistance and low gate-source voltage requirements, it can provide efficient switching control in LED driver modules, reduce power losses and improve system efficiency, and is suitable for home lighting, automotive lighting and small LED display modules.
3. **Load Switch and Power Management**
Due to its good switching performance, the TSM3460CX6 RF-VB is also suitable for use as a load switch in various power management circuits. In low-voltage and medium-power applications, this MOSFET can be used as a load switch in battery-powered systems, power tools, and other consumer electronic devices to control the switching state of the device and ensure efficient power transmission and low loss.
4. **Portable Electronic Devices**
The TSM3460CX6 RF-VB is particularly suitable for portable electronic devices such as handheld devices, radio communication devices, and wearable devices due to its compact SOT23-6 package and high performance. Its low on-resistance and small package make it an ideal choice for low-power switch control, enabling high performance in a smaller size and extending the battery life of the device.
5. **Battery Management System (BMS)**
In the battery management system, the TSM3460CX6 RF-VB can be used to control the battery charging and discharging path, optimize the battery efficiency and extend the battery life. Due to its high drain current capability (6A), it is well suited for use in medium battery systems, especially battery management applications in power tools, e-bikes, mobile devices, etc.
6. **Low Power Automation and Sensor Systems**
This MOSFET is also widely used in low power automation and sensor systems. Its low gate-source voltage requirement and efficient switching performance make it suitable for sensor data acquisition and signal switching, especially for switch control applications in low voltage sensor networks and smart home systems.
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