TSM3457CX6 RF-VB Product details
Product introduction:
**TSM3457CX6 RF-VB** is a single P-type MOSFET in a SOT23-6 package with a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is -1.7V, and the on-resistance RDS(ON) is 54mΩ (at VGS=4.5V) and 49mΩ (at VGS=10V). The maximum continuous drain current is -4.8A. Using Trench technology, it provides lower on-resistance and fast switching characteristics, which is very suitable for low-power, low-voltage switching applications.
TSM3457CX6 RF-VB is particularly suitable for power management, low-power switch control and load switching applications. Its high efficiency and low power consumption make it very suitable for current control in consumer electronics, battery-powered devices and various low-power modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: TSM3457CX6 RF-VB
- **Package**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Maximum power consumption (Ptot)**: 1.25W (typical value, actual power consumption will be calculated based on operating conditions and ambient temperature)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 250°C/W (from junction to heat sink)
- **Applications**:
- Power management
- Low current switching
- Battery powered systems
- Consumer electronics
- Load control
Domain and module applications:
**1. Power management system**
TSM3457CX6 RF-VB is very suitable for power management systems, especially in low voltage and high-efficiency switching power supply applications. This MOSFET can be used as a switching element in DC-DC converters, which helps to improve power efficiency and reduce power loss. It is especially suitable for low voltage systems such as 12V and 5V, and can provide reliable performance in high-efficiency power conversion.
**2. Low current switching applications**
This MOSFET is very suitable for low current switching applications, especially in low voltage and low power control occasions. For example, it can be used in micro switching power supplies as a load control switch to help the power management module control the switching of loads at different voltage levels. Its low on-resistance can effectively reduce power loss and ensure efficient operation of the system.
**3. Battery-powered system**
TSM3457CX6 RF-VB has excellent low power consumption characteristics and is very suitable for switching control of battery-powered devices. It can be used in power management systems for smart watches, wearable devices, Bluetooth headsets, and other portable devices to extend battery life through precise current switching. For example, in a battery management system (BMS), it can be used in modules such as battery charge monitoring, charging management, and battery protection.
**4. Load control applications**
In load control applications, the TSM3457CX6 RF-VB can accurately control the switching of current and is widely used in control modules of various types of low-power loads. For example, in wireless sensor systems, it can be used as a load switch element to achieve switching operations and power management. These applications usually require fast response and low power consumption, and the TSM3457CX6 RF-VB can meet these requirements due to its low on-resistance and fast switching characteristics.
**5. Consumer electronics**
In consumer electronics, the TSM3457CX6 RF-VB can be used as a key element for power management and load switching. For example, in consumer electronics such as mobile phones, tablets, and wireless devices, it can provide stable power switching control, reduce power consumption, and ensure the stability of the device during long-term use. In addition, it is also suitable for low-power applications such as Bluetooth speakers and smart home devices.
**6. Overcurrent protection system**
TSM3457CX6 RF-VB can also be used in overcurrent protection circuits. It can automatically cut off the current flow when the current exceeds a predetermined value to prevent circuit damage. For example, in a battery protection module (BMS), the TSM3457CX6 RF-VB can be used as an overcurrent disconnect switch to protect batteries and other sensitive electronic components.
**Summary**
TSM3457CX6 RF-VB is a P-type MOSFET suitable for low-voltage, high-efficiency applications. It is widely used in power management, low-current switching, load control, and battery-powered systems. Its low on-resistance and fast switching characteristics make it perform well in consumer electronics, battery management, and efficient power conversion, which can improve device efficiency and extend battery life.
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