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TSM3455CX6 RF-VB Product details
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TSM3455CX6 RF-VB MOSFET Product Introduction
TSM3455CX6 RF-VB is a unipolar P-Channel power MOSFET in SOT23-6 package, designed for low-voltage power switch and load switch applications. This MOSFET has a maximum drain-source voltage (V_DS) of -30V and can withstand a maximum gate-source voltage (V_GS) of ±20V. Its turn-on voltage threshold (V_th) is -1.7V, which can start working at a lower gate drive voltage and has excellent on-resistance (R_DS(on)) performance: 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V. The maximum drain current (I_D) is -4.8A, making it suitable for a variety of small and medium power switching circuits that require efficient current control and low power loss. The TSM3455CX6 RF-VB uses the Trench process, which has lower conduction loss and higher switching speed, making it an ideal choice for power management, load switching, inverters and other fields.
TSM3455CX6 RF-VB is a unipolar P-Channel power MOSFET in SOT23-6 package, designed for low-voltage power switch and load switch applications. This MOSFET has a maximum drain-source voltage (V_DS) of -30V and can withstand a maximum gate-source voltage (V_GS) of ±20V. Its turn-on voltage threshold (V_th) is -1.7V, which can start working at a lower gate drive voltage and has excellent on-resistance (R_DS(on)) performance: 54mΩ at V_GS = 4.5V and 49mΩ at V_GS = 10V. The maximum drain current (I_D) is -4.8A, making it suitable for a variety of small and medium power switching circuits that require efficient current control and low power loss. The TSM3455CX6 RF-VB uses the Trench process, which has lower conduction loss and higher switching speed, making it an ideal choice for power management, load switching, inverters and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
TSM3455CX6 RF-VB MOSFET Detailed parameter description
- **Package type (Package)**: SOT23-6
- **Configuration (Configuration)**: Unipolar P-Channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Turning point voltage threshold (V_th)**: -1.7V
- **On-resistance (R_DS(on))**:
- 54mΩ (at V_GS = 4.5V)
- 49mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: -4.8A
- **Process technology (Technology)**: Trench
- **Operating temperature range**: Not available
- **Maximum power dissipation (P_D)**: Not available
- **Package type (Package)**: SOT23-6
- **Configuration (Configuration)**: Unipolar P-Channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Turning point voltage threshold (V_th)**: -1.7V
- **On-resistance (R_DS(on))**:
- 54mΩ (at V_GS = 4.5V)
- 49mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: -4.8A
- **Process technology (Technology)**: Trench
- **Operating temperature range**: Not available
- **Maximum power dissipation (P_D)**: Not available
Domain and module applications：
TSM3455CX6 RF-VB MOSFET Application Fields and Module Examples
1. **Power and Load Switching**
TSM3455CX6 RF-VB can be widely used in power and load switching circuits. Due to its low on-resistance (R_DS(on)), the MOSFET can perform efficient current control at lower drive voltages, reduce power losses, and improve circuit efficiency. Especially in low-voltage power management systems, it can accurately control load switches to ensure stable circuit operation and reduce heat generation during switching.
2. **DC-DC Converters**
In DC-DC converter applications, TSM3455CX6 RF-VB can be used as an efficient switching element to help convert between different voltages. Its low R_DS(on) and high current handling capability enable it to withstand the load current during the conversion process and ensure high efficiency of the converter system. In addition, the excellent switching characteristics of this MOSFET can also support high-speed power conversion, meeting the high requirements of modern electronic devices for power efficiency.
3. **Battery Management Systems**
The application of TSM3455CX6 RF-VB in battery management systems is mainly reflected in battery charge and discharge control and battery protection circuits. In these systems, MOSFET can accurately control the flow direction and size of battery current to ensure safe battery charging and discharging. The efficient switching characteristics and low on-resistance of this MOSFET make it very suitable for efficient battery management systems, especially in portable electronic devices, energy storage systems and other fields.
4. **LED Drivers**
TSM3455CX6 RF-VB is also suitable for LED driver circuits as a load switch control component. In LED driver systems, MOSFET is used to accurately adjust the current of LED lamps, provide efficient power conversion and stable current control. Its low R_DS(on) characteristics can reduce energy loss, maintain system stability, and extend the service life of LEDs.
5. **Inverters**
TSM3455CX6 RF-VB can be used in inverter circuits, especially low-voltage and low-power inverters. Inverters are widely used in solar power generation systems, UPS (uninterruptible power supply) and other power conversion applications. The low R_DS(on) and high current handling capability of TSM3455CX6 ensure that it can work stably and achieve efficient power conversion.
6. **Audio Amplifiers**
In audio amplifiers, TSM3455CX6 RF-VB can be used as an efficient switching element for amplifying and regulating audio current. The switching characteristics of MOSFET enable audio amplifiers to provide stable and clear sound quality while reducing energy loss and improving overall efficiency.
7. **Overcurrent Protection & Circuit Protection**
TSM3455CX6 RF-VB can also be used in overcurrent protection circuits to quickly disconnect current when the power supply or load is overcurrent to prevent circuit damage. It performs particularly well in low voltage and low power environments and can provide effective protection for various power systems and loads.
1. **Power and Load Switching**
TSM3455CX6 RF-VB can be widely used in power and load switching circuits. Due to its low on-resistance (R_DS(on)), the MOSFET can perform efficient current control at lower drive voltages, reduce power losses, and improve circuit efficiency. Especially in low-voltage power management systems, it can accurately control load switches to ensure stable circuit operation and reduce heat generation during switching.
2. **DC-DC Converters**
In DC-DC converter applications, TSM3455CX6 RF-VB can be used as an efficient switching element to help convert between different voltages. Its low R_DS(on) and high current handling capability enable it to withstand the load current during the conversion process and ensure high efficiency of the converter system. In addition, the excellent switching characteristics of this MOSFET can also support high-speed power conversion, meeting the high requirements of modern electronic devices for power efficiency.
3. **Battery Management Systems**
The application of TSM3455CX6 RF-VB in battery management systems is mainly reflected in battery charge and discharge control and battery protection circuits. In these systems, MOSFET can accurately control the flow direction and size of battery current to ensure safe battery charging and discharging. The efficient switching characteristics and low on-resistance of this MOSFET make it very suitable for efficient battery management systems, especially in portable electronic devices, energy storage systems and other fields.
4. **LED Drivers**
TSM3455CX6 RF-VB is also suitable for LED driver circuits as a load switch control component. In LED driver systems, MOSFET is used to accurately adjust the current of LED lamps, provide efficient power conversion and stable current control. Its low R_DS(on) characteristics can reduce energy loss, maintain system stability, and extend the service life of LEDs.
5. **Inverters**
TSM3455CX6 RF-VB can be used in inverter circuits, especially low-voltage and low-power inverters. Inverters are widely used in solar power generation systems, UPS (uninterruptible power supply) and other power conversion applications. The low R_DS(on) and high current handling capability of TSM3455CX6 ensure that it can work stably and achieve efficient power conversion.
6. **Audio Amplifiers**
In audio amplifiers, TSM3455CX6 RF-VB can be used as an efficient switching element for amplifying and regulating audio current. The switching characteristics of MOSFET enable audio amplifiers to provide stable and clear sound quality while reducing energy loss and improving overall efficiency.
7. **Overcurrent Protection & Circuit Protection**
TSM3455CX6 RF-VB can also be used in overcurrent protection circuits to quickly disconnect current when the power supply or load is overcurrent to prevent circuit damage. It performs particularly well in low voltage and low power environments and can provide effective protection for various power systems and loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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