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TSM3446CX6 RF-VB Product details
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1. **Product Introduction - TSM3446CX6 RF-VB**
TSM3446CX6 RF-VB is a unipolar N-channel MOSFET in SOT23-6 package, designed for low voltage and medium current applications, suitable for high frequency switching and low power electronic systems. The MOSFET has a drain to source voltage (V_DS) of 30V, a gate drive voltage (V_GS) of ±20V maximum, a threshold voltage (V_th) of 1.7V, and an on-resistance (R_DS(ON)) of 26mΩ at V_GS = 10V, suitable for high efficiency and low power loss applications. The maximum drain current (I_D) is 6A, suitable for applications requiring medium current carrying capacity. TSM3446CX6 RF-VB uses Trench technology to provide good switching characteristics, low on-resistance and high reliability, and is particularly suitable for high frequency switching power supplies, load driving and other low voltage applications.
TSM3446CX6 RF-VB is a unipolar N-channel MOSFET in SOT23-6 package, designed for low voltage and medium current applications, suitable for high frequency switching and low power electronic systems. The MOSFET has a drain to source voltage (V_DS) of 30V, a gate drive voltage (V_GS) of ±20V maximum, a threshold voltage (V_th) of 1.7V, and an on-resistance (R_DS(ON)) of 26mΩ at V_GS = 10V, suitable for high efficiency and low power loss applications. The maximum drain current (I_D) is 6A, suitable for applications requiring medium current carrying capacity. TSM3446CX6 RF-VB uses Trench technology to provide good switching characteristics, low on-resistance and high reliability, and is particularly suitable for high frequency switching power supplies, load driving and other low voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 26mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
2. **Detailed parameter description**
- **Model**: TSM3446CX6 RF-VB
- **Package**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage(V_DS)**: 30V
- **Gate Drive Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 1.7V
- **On-resistance(R_DS(ON))**:
- 27mΩ @ V_GS = 4.5V
- 26mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 6A
- **Maximum Power Dissipation**: 1W (calculated based on thermal resistance and operating conditions)
- **Technology type**: Trench technology
- **Switching characteristics**:
- Turn-on delay time: 40ns
- Turn-off delay time: 80ns
- Reverse recovery time: 150ns
- **Maximum gate-source voltage (V_GS_max)**: ±20V
- **Maximum drain-source current (I_D_max)**: 6A
- **Gate charge (Qg)**: 25nC (typical)
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 50°C/W (typical)
- **Model**: TSM3446CX6 RF-VB
- **Package**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage(V_DS)**: 30V
- **Gate Drive Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 1.7V
- **On-resistance(R_DS(ON))**:
- 27mΩ @ V_GS = 4.5V
- 26mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 6A
- **Maximum Power Dissipation**: 1W (calculated based on thermal resistance and operating conditions)
- **Technology type**: Trench technology
- **Switching characteristics**:
- Turn-on delay time: 40ns
- Turn-off delay time: 80ns
- Reverse recovery time: 150ns
- **Maximum gate-source voltage (V_GS_max)**: ±20V
- **Maximum drain-source current (I_D_max)**: 6A
- **Gate charge (Qg)**: 25nC (typical)
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 50°C/W (typical)
Domain and module applications：
3. **Application Fields and Module Examples**
- **High-Frequency Switching Power Supplies**
TSM3446CX6 RF-VB is particularly suitable for high-frequency switching power supplies (such as DC-DC converters) due to its low on-resistance and fast switching characteristics. Due to its low on-resistance, it can significantly reduce power loss and improve system efficiency. It is suitable for power conversion and battery management in applications such as mobile devices, consumer electronics, and wireless communication devices.
- **Battery Management Systems (BMS)**
TSM3446CX6 RF-VB can be used in battery management systems, especially in the charge and discharge control of low-voltage batteries (such as lithium batteries), providing efficient switching capabilities. It can control the charge and discharge state of the battery, ensure that the battery operates within a safe voltage range, and maximize battery life. Its low on-resistance helps reduce energy loss.
- **Low-Power Wireless Devices**
As the TSM3446CX6 RF-VB supports higher switching frequencies and lower power consumption, it is very suitable for low-power wireless devices (such as Bluetooth devices, sensor nodes, etc.). This MOSFET can be used in modules such as power amplifiers, RF switches, and modems to provide high-efficiency power transmission and low-latency signal processing.
- **Audio Amplifiers**
In audio amplifier systems, the TSM3446CX6 RF-VB is suitable for low-voltage drive circuits. It can be used for audio signal amplification in consumer electronics such as home theaters and audio equipment, providing stable output current and low power loss. By reducing the on-resistance, high-quality output of audio signals is guaranteed.
- **Communication Devices**
This MOSFET is used as a low-voltage switch and signal processor in communication equipment, and can work in a low-power state. It is suitable for communication modules such as mobile phones, wireless routers, and Bluetooth devices. Its high performance and low power consumption can extend the working time of the device and ensure high-efficiency transmission during the communication process.
- **Automotive Electronics**
TSM3446CX6 RF-VB is suitable for load switches, on-board chargers, on-board sensors and other low-power power management systems in automotive electronic systems. It can work stably in an environment of high-frequency switching and low power consumption to ensure the reliability and stability of the automotive system.
- **Sensor Applications**
In sensor modules, TSM3446CX6 RF-VB can be used to control switching circuits of current and voltage, especially in sensor systems that require high-frequency operation and precise current control. It is suitable for power management and signal conditioning in the fields of gas sensors, pressure sensors, temperature sensors, etc.
- **High-Frequency Switching Power Supplies**
TSM3446CX6 RF-VB is particularly suitable for high-frequency switching power supplies (such as DC-DC converters) due to its low on-resistance and fast switching characteristics. Due to its low on-resistance, it can significantly reduce power loss and improve system efficiency. It is suitable for power conversion and battery management in applications such as mobile devices, consumer electronics, and wireless communication devices.
- **Battery Management Systems (BMS)**
TSM3446CX6 RF-VB can be used in battery management systems, especially in the charge and discharge control of low-voltage batteries (such as lithium batteries), providing efficient switching capabilities. It can control the charge and discharge state of the battery, ensure that the battery operates within a safe voltage range, and maximize battery life. Its low on-resistance helps reduce energy loss.
- **Low-Power Wireless Devices**
As the TSM3446CX6 RF-VB supports higher switching frequencies and lower power consumption, it is very suitable for low-power wireless devices (such as Bluetooth devices, sensor nodes, etc.). This MOSFET can be used in modules such as power amplifiers, RF switches, and modems to provide high-efficiency power transmission and low-latency signal processing.
- **Audio Amplifiers**
In audio amplifier systems, the TSM3446CX6 RF-VB is suitable for low-voltage drive circuits. It can be used for audio signal amplification in consumer electronics such as home theaters and audio equipment, providing stable output current and low power loss. By reducing the on-resistance, high-quality output of audio signals is guaranteed.
- **Communication Devices**
This MOSFET is used as a low-voltage switch and signal processor in communication equipment, and can work in a low-power state. It is suitable for communication modules such as mobile phones, wireless routers, and Bluetooth devices. Its high performance and low power consumption can extend the working time of the device and ensure high-efficiency transmission during the communication process.
- **Automotive Electronics**
TSM3446CX6 RF-VB is suitable for load switches, on-board chargers, on-board sensors and other low-power power management systems in automotive electronic systems. It can work stably in an environment of high-frequency switching and low power consumption to ensure the reliability and stability of the automotive system.
- **Sensor Applications**
In sensor modules, TSM3446CX6 RF-VB can be used to control switching circuits of current and voltage, especially in sensor systems that require high-frequency operation and precise current control. It is suitable for power management and signal conditioning in the fields of gas sensors, pressure sensors, temperature sensors, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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